Provided is a plating method including performing a first masking that masks a first region and a second region among the first region including only a first metal and the second region including only a second metal in a clad metal having the first metal and the second metal cladded, and a third region including a contact part between the first metal and the second metal, precipitating the clad metal in a first plating solution, performing a second masking that removes the processed masking in one of the first region and the second region, precipitating at least the region where the second masking has been performed in a second plating solution, and precipitating the region where the second masking has been performed and the third region in a third plating solution.

A method of forming an etched part includes forming a substrate including a thermoset resin and etching a surface of the substrate. The thermoset resin includes a vat photopolymerization (VPP) thermoset resin and at least one of an etchable phase and etchable particles disposed within the VPP thermoset resin. The etching removes the etchable phase from the VPP thermoset resin at the surface of the substrate such that a plurality of micro-mechanical bonding sites are formed on an etched surface of the substrate.

Described herein is a chamber component including a metal layer comprising nickel and a barrier layer of nickel oxide over the metal layer. The barrier layer of nickel oxide may be formed by ozone treating the chamber component with air, nitrogen or argon O.sub.2, O.sub.3 at a temperature from about 25° C. to about 350° C.

The present invention relates to a roll stamp and a method of manufacturing the same, the roll stamp including a cylindrical metal mold including a debossed pattern formed on an outer side and a hollow portion formed on an inner side, and a dummy roller inserted into the hollow portion. Because a joining portion is not formed on the entire area of the cylindrical metal mold, a problem in which edge regions are separated does not occur. Also, due to the absence of the joining portion, it is possible to perform a patterning process continuously.

The present invention relates to a method for metallizing a non-metallic substrate, the method comprising the steps (A) to (C), wherein step (A) is a pre-treatment step for etching and step (C) the metallization step. In step (A) a pre-treatment composition is utilized comprising individual manganese (II), (III), and (IV) species. The present invention furthermore relates to a specific pre-treatment composition.

An article including a substrate having on at least a portion of its surface a multilayer coating. The multilayer coating including at least one layer of electroless nickel overlying the portion of the surface, at least one layer of electrolytic nickel overlying the layer of electroless nickel, and at least one layer of an electrolytic tin-nickel overlying the layer of electrolytic nickel.

An electroless composite coating has a layered structure alternating a metallic NiP layer and a composite NiP layer. A system includes the electroless composite coating and a substrate. A method of preparing the coating includes depositing a metallic NiP layer and a composite NiP layer on the substrate.

A composition for forming an electroless plating undercoat comprising: (A) a conductive polymer (B) one or more resins selected from the group consisting of a polyester polyol resin and a polyether polyol resin; and (C) a polyisocyanate compound.

Even when a stress is applied due to energization or switching operation, a connection state of electrode layers can be appropriately maintained. A semiconductor device includes a semiconductor layer of first conductivity type, an upper surface structure formed on a surface layer of the semiconductor layer, and an upper surface electrode formed over the upper surface structure. The upper surface electrode includes a first electrode formed on an upper surface of the semiconductor layer, and a second electrode formed over an upper surface of the first electrode. The first concave portion is formed on the upper surface of the first electrode. A side surface of the first concave portion has a tapered shape. The second electrode is formed over the upper surface of the first electrode including an inside of the first concave portion.

There is provided a technique capable of forming a plating film excellent in film thickness and quality uniformity on a to-be-plated surface of a semiconductor wafer while suppressing an increase in costs of facilities. An apparatus for manufacturing a semiconductor device includes: a reaction bath; a supply pipe provided inside the reaction bath and including a plurality of ejection holes for ejecting the reaction solution, the ejecting holes being arranged in a longitudinal direction of the supply pipe; and an outer bath serving as a reservoir bath provided adjacent to the reaction bath on a first end side of the supply pipe and storing therein the reaction solution overflowed the reaction bath. The aperture ratio of part of the ejection holes more distant from the outer bath is at least partially higher than that of part of the ejection holes closer to the outer bath.