An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

The present invention provides a methodology of making lead foam by an electrochemical process in which non-conducting poly urethane foam was metalized using palladium chloride solution which was then coated with lead using the plating bath containing fluoboric acid, Lead as fluoborate solutions, boric acid and urea. The process was operated at a current density ranging from 0.5 A/dm.sup.2 to 5 A/dm.sup.2, bath pH from 0.5 to 2.0, at temperature range from 30 C. to 50 C., followed with suitable post plating treatments. The surface morphology of the lead foam thus obtained was studied. The composition and purity of the lead foam was characterized with XRD. The porosity obtained depends upon the rate of deposition. The average value of the porosity realized in the range 86-79% with respect to time of deposition 2-6 h and the corresponding thickness of 45 to 60 micron.

Implementations of a method of electroless deposition may include providing a semiconductor substrate including a first largest planar surface and a second largest planar surface; forming a backmetal layer on the second largest planar surface; attaching a tape over the backmetal layer; and electroless depositing a metal layer on a pad included on the first largest planar surface. The method may include, after electroless depositing, removing the tape; and after removing the tape, baking the semiconductor substrate.

The invention according to the present application addresses the problem of providing: an electroless NiP plating film for sliding members which provides good lubricity under a poor lubrication environment and improves the wear resistance of a sliding member and an electroless NiP plating film disposed on a surface of the sliding member and the seizure resistance between sliding members while maintaining the dimensional stability and strength of the sliding member; and a method for producing the same. In order to address this problem, the electroless NiP plating film according to the present application adopts an electroless NiP plating film for sliding members which has a minute irregularity shape of a predetermined size on the surface and has a Vickers hardness of 600 HV or more, and a method for producing the same.

The present invention relates to metal plating solution comprising at least one source of metal ions and detonation nanodiamonds, wherein the detonation nanodiamonds are substantially free of negatively charged functionalities, and to a method for producing the solution. The present invention further relates to metal plating method and to a metallic coating comprising metal and detonation nanodiamonds substantially free of negatively charged functionalities.

In a substrate processing apparatus 1, a plating unit 4 includes a catalyst solution supply unit 43a and a plating liquid supply unit 45. By supplying, from the catalyst solution supply unit 43a onto a substrate W1 having an impurity-doped polysilicon film 90 containing a high concentration of impurities on a surface thereof, an alkaline catalyst solution L1 containing a complex of a palladium ion and a monocyclic 5- or 6-membered aromatic or aliphatic heterocyclic compound having one or two nitrogen atoms as a heteroatom, a catalyst layer 91 is formed on a surface of the impurity-doped polysilicon film 90 of the substrate W1. After the catalyst solution L1 is supplied, an electroless plating layer 92 is formed on the catalyst layer 91 formed on a substrate W2 by supplying a plating liquid M1 from the plating liquid supply unit 45 onto the substrate W2.

An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

A subject matter of the invention is a process for the formation of nickel silicide or of cobalt silicide, comprising the stages consisting in: exposing the surface of the silicon-comprising substrate with an aqueous solution comprising from 0.1 mM to 10 mM of gold ions and from 0.6 M to 3.0 M of fluorine ions for a duration of between 5 seconds and 5 minutes, depositing by an electroless route, on the activated substrate, a layer essentially composed of nickel or of cobalt, applying a rapid thermal annealing at a temperature of between 300 C. and 750 C., so as to form the nickel silicide or the cobalt silicide. The aqueous solution comprises a surface-active agent chosen from the compounds comprising at least one anionic or nonionic polar group and an alkyl chain comprising from 10 to 16 carbon atoms. This process essentially has applications in the manufacture of NAND memories and photovoltaic cells.

The present invention relates to metal plating solution comprising at least one source of metal ions and detonation nanodiamonds, wherein the detonation nanodiamonds are substantially free of negatively charged functionalities, and to a method for producing the solution. The present invention further relates to metal plating method and to a metallic coating comprising metal and detonation nanodiamonds substantially free of negatively charged functionalities.