Graphene oxide is used as an insulation barrier layer for metal deposition. After patterning and modification, the chemical characteristics of graphene oxide are induced. It can be used as the catalyst for electroless plating in the metallization process, so that the metal is only deposited on the patterned area. It provides the advantages of improving reliability and yield. The metallization structure includes a substrate, a graphene oxide catalytic layer, and a metal layer. It may be widely applied to the metallization of the fine pitch metal of a semiconductor package as well as the fine pitch wires of a printed circuit board (PCB), touch panels, displays, fine electrodes of solar cells, and so on.

A process for depositing metal or metal alloy on a substrate including treating the substrate surface with an activation solution comprising a source of metal ions so the metal ions are adsorbed on the substrate surface, treating the obtained substrate surface with a treatment solution containing an additive selected from thiols, thioethers, disulphides and sulphur containing heterocycles, and a reducing agent suitable to reduce the metal ions adsorbed on the substrate surface selected from boron based reducing agents, hypophosphite ions, hydrazine and hydrazine derivatives, ascorbic acid, iso-ascorbic acid, sources of formaldehyde, glyoxylic acid, sources of glyoxylic acid, glycolic acid, formic acid, sugars, and salts of aforementioned acids; and subsequently treating the substrate surface with a metallizing solution comprising a source of metal ions to be deposited such that a metal or metal alloy is deposited thereon.

Disclosed herein are a vapor chamber and a method of producing the same. The vapor chamber includes a chamber body plate having one surface placed in close contact with a heating surface of a heating element and the other surface that is open, and having a refrigerant filling space filled with a refrigerant therein and defined to have a predetermined thickness, a chamber cover plate bonded to shield the other open surface of the chamber body plate, and a wick formed in the refrigerant filling space, which is a space between the chamber body plate and the chamber cover plate, and having at least multiple pores through which the refrigerant filled in the refrigerant filling space flows. The wick has the multiple pores formed through an electroless Ni plating process with aluminum powder filled in the refrigerant filling space, providing an advantage of simple manufacturing and excellent heat conduction performance.

A substrate processing method includes preparing a substrate, removing at least a part of a first metal layer, and precipitating a second metal layer. In the preparing of the substrate, the substrate having the first metal layer formed on a front surface thereof is prepared. In the removing of at least the part of the first metal layer, at least the part of the first metal layer formed on a peripheral portion of the substrate is removed. In the precipitating of the second metal layer, the second metal layer is precipitated on the front surface of the substrate by using the first metal layer as a catalyst after the removing of at least the part of the first metal layer.

There is provided a method for producing a metal-plated stainless material, the method including performing an acid treatment of treating a stainless steel material with an acidic solution; performing an etching of treating the stainless steel material after the acid treatment with an etching treatment agent; and a modifying the surface of the stainless steel material after the etching into a state suitable for a metal plating process.

This invention relates to an object with electroless plated coatings that includes an adhesion coating, a smoothening coating, a silver coating and an anti-scratch coating. A method of fabricating the electroless plated object is also described.

In a semiconductor element of the present invention, an electroless nickel-phosphorus plating layer and an electroless gold plating layer are formed on both a front-side electrode and a back-side electrode of a front-back conduction-type substrate. The front-side electrode and the back-side electrode are formed of aluminum or an aluminum alloy. The proportion of the thickness of the electroless nickel-phosphorus plating layer formed on the front-side electrode with respect to the thickness of the electroless nickel-phosphorus plating layer formed on the back-side electrode is in a range of 1.0 to 3.5. The semiconductor element of the present invention allows the occurrence of voids inside solder during mounting by soldering to be prevented.

An electroless nickel plating solution and a method of using the same is described. The electroless nickel plating solution comprises (i) a source of nickel ions; (ii) a reducing agent; (iii) one or more complexing agents; (iv) one or more bath stabilizers; (v) a brightener, said brightener comprising a sulfonated compound having sulfonic acid or sulfonate groups; and (vi) optionally, one or more additional additives. The use of the sulfonated compound brightener results in a bright electroless nickel deposit on various substrates having a high gloss value.

A method of applying a wear resistant surface to chain links and pins of a chain by the application of an electroless nickel coating containing hard particles. The coating reduces the friction on the chain links and associated chain components, such as pins, bushings, rockers and other components. The hard particles contained in the coating may be a carbide or nitride formed using the following elements: silicon, boron, chromium or vanadium. The coating may contain a combination of carbide or nitrides. The hard particles may additional include natural diamond and/or synthetic diamond like carbon (DLC) particles.

An electroless plating process is performed on an Al layer, which is made of aluminum or an aluminum alloy, with an electroless plating liquid which is alkaline and contains a complexing agent. A plating method includes preparing a substrate 10 having a surface (for example, bottom surface of TSV 12) at which an Al layer 22 made of aluminum or an aluminum alloy is exposed; forming a zincate film 30 on a surface of the Al layer by performing a zincate treatment on the substrate; and forming a first electroless plating layer (for example, Co barrier layer 14a) on the surface of the Al layer with an electroless plating liquid (for example, Co-based plating liquid) which is alkaline and contains a complexing agent.