The present invention relates to methods and systems for deposition of metal conductors using asymmetrical electrolytic plating, in which one surface (e.g., top) of a substrate is coated with an electrical conductor, and an opposite (e.g., bottom, or other) surface of which is not coated. A channel is formed between the two sides of the substrate, passing through the substrate and, in some embodiments, passing through the conductor. Electrolytic plating is performed such that metal is deposited from the edge of the conduct proximal to the channel, along the side walls of the channel, and up to, and in some embodiments on to, the other side of the substrate. Use of etching or plate resist layers are also contemplated.

A method of producing an electroconductive substrate including a base material, and an electroconductive pattern disposed on one main surface side of the base material includes: a step of forming a trench including a bottom surface to which a foundation layer is exposed, and a lateral surface which includes a surface of a trench formation layer, according to an imprint method; and a step of forming an electroconductive pattern layer by growing metal plating from the foundation layer which is exposed to the bottom surface of the trench.

A method of manufacturing a package, comprising embedding the semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm; selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases; and plating the converted part of the encapsulant with an electrically conductive material.

A method of making a composite material includes disposing a carbon-based particulate material, such as graphene or carbon nanotubes, in an activation solution and activating surfaces of the carbon-based particulate material using the activation solution. Once the surfaces of the carbon-based particulate material have been activated, a metallic coating is applied to the activated surfaces to form a composite material. The composite material is then recovered as a particulate material formed having carbon-based particulate material with a metallic coating that is suitable for fusing together for forming electrical conductors, such as with an additive manufacturing technique.

The instant disclosure provides a method for manufacturing an electroless plating substrate and a method for forming a metal layer on a surface of a substrate. The method for preparing the electroless plating substrate includes: providing a substrate; attaching a self-adsorbed catalyst composition to a surface of the substrate; and performing an electroless metal deposition for forming an electroless metal layer on the surface of the substrate. The self-adsorbed catalyst composition includes a colloidal nanoparticle and a silane compound. The colloidal nanoparticle includes a palladium nanoparticle and a capping agent enclosing the palladium nanoparticle. The silane compound has at least one amino group to interact with the colloidal nanoparticle. A covalent bond between the silane compound and the surface of the substrate is formed through the at least one silane group of the silane compound. The colloid nanoparticle has a particle size ranging from 5 to 10 nanometers.

A new method capable of forming a circuit by performing metal plating on a desired portion on a substrate through a small number of steps regardless of the kind of the substrate. A method for forming a circuit on a substrate characterized in that when forming a circuit by plating on a substrate, the method includes steps of applying a coating film containing a silicone oligomer and a catalyst metal onto the substrate, and thereafter, performing an activation treatment of the catalyst metal in the coating film to make the catalyst metal exhibit autocatalytic properties, and then, performing electroless plating.

A technology capable of reducing contamination of a semiconductor substrate above which a nickel film is disposed is provided. A semiconductor device includes: a semiconductor substrate; an aluminum alloy film disposed on at least one of a front surface and a back surface of the semiconductor substrate; a catalyst metal film disposed above the aluminum alloy film and exhibiting catalytic activity for autocatalytic reaction that deposits nickel; an electroless nickel plating film disposed on the catalyst metal film; and a reactant layer disposed between the aluminum alloy film and the catalyst metal film and containing metal of the catalyst metal film.

An oxygen-free or oxygen-poor solution for the electroless deposition of a platinum group metal is described. The solution includes a ruthenium (II) amine complex having a first oxidation potential, and a platinum group metal compound having a reduction potential larger than the opposite of the oxidation potential of the ruthenium (II) amine complex.

A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.

A composite member includes: a substrate formed of a composite material containing a plurality of diamond grains and a metal phase; and a coating layer made of metal. The surface of the substrate includes a surface of the metal phase, and a protrusion formed of a part of at least one diamond grain of the diamond grains and protruding from the surface of the metal phase. In a plan view, the coating layer includes a metal coating portion, and a grain coating portion. A ratio of a thickness of the grain coating portion to a thickness of the metal coating portion is equal to or less than 0.80. The coating layer has a surface roughness as an arithmetic mean roughness Ra of less than 2.0 m.