A catalyst layer can be uniformly formed on an entire surface of a substrate and an entire inner surface of a recess. A catalyst layer forming method of forming the catalyst layer on the substrate includes a first supply processing of forming a substrate surface catalyst layer 22A by supplying a catalyst liquid on the entire surface of the substrate 2; and a second supply processing of forming a recess inner surface catalyst layer 22B by supplying the catalyst liquid to a central portion of the substrate 2 while rotating the substrate 2.

A method for plating nickel onto a glass surface of a substrate by sequentially contacting the surface with a solution having an oxidizing agent, a solution containing a silane compound, a Pd/Sn solution, and a nickel ion-containing solution, thereby accomplishing an electroless nickel plating process.

Provided are an adhesion promoting layer, a method for depositing a conductive layer on an inorganic or organic-inorganic hybrid substrate and a conductive structure. The adhesion promoting layer is suitable for depositing a conductive layer on an inorganic or organic-inorganic hybrid substrate, which includes a metal oxide layer and an interface layer. The metal oxide layer is disposed on the inorganic or organic-inorganic hybrid substrate. The interface layer is disposed between the metal oxide layer and the inorganic or organic-inorganic hybrid substrate. The metal oxide layer includes metal oxide and a chelating agent. The interface layer includes the metal oxide, the chelating agent and metal-nonmetal-oxide composite material.

A substrate processing apparatus includes a liquid processing module, provided with a carry-out/in opening of a substrate, including therein a first liquid processing device and a second liquid processing device; a module-outside transfer device configured to carry the substrate out from and into the liquid processing module; and a module-inside transfer device configured to transfer the substrate between the first liquid processing device and the second liquid processing device. The first liquid processing device is equipped with a first holder configured to hold the substrate. The second liquid processing device is equipped with a second holder configured to hold the substrate. The second liquid processing device is configured to perform a plating processing on the substrate held by the second holder. The first liquid processing device is configured to perform at least a post-cleaning processing performed after the plating processing on the substrate held by the first holder.

A composition which conditions a surface for electroless deposition of a metal is disclosed. The composition comprises a polymer surfactant comprising repeating units of a monomer, wherein each of the repeating units comprises a functional group; a metal ion; and water, wherein the functional group in each of the repeating units forms a complex with the metal ion. In a preferred embodiment, the functional group is amine, and the surfactant comprises polyethyleneimine and/or polyallylamine. The metal ion comprises cobalt, rhodium, palladium or silver. A method of forming the composition as well as a method of electroless deposition using the composition are also disclosed.

A method of forming a silver catalyst layer in chemical plating includes providing a substrate; applying a silver-containing solution onto the substrate; and applying energy of activation to the silver-containing solution to form a silver catalyst layer over the substrate. The silver-containing solution includes silver ions, a diamine compound, a carboxylic acid compound, and a solvent. In addition, the substrate having the silver catalyst layer thereon can be immersed into a chemical plating solution to form a metal layer over the silver catalyst layer.

Method for activating a surface of a non-conductive or carbon-fibres containing substrate for metallization, the method including: (a) providing said substrate, (b) providing an aqueous, palladium-free activation composition comprising (i) a first species of dissolved transition metal ions and additionally metal particles thereof, (ii) at least one complexing agent, (iii) permanently or temporarily at least one reducing agent, (iv) optionally one or more second species of dissolved metal ions different from the first species, (c) contacting the substrate with said activation composition such that a transition metal or a transition metal alloy is deposited on the surface of said substrate and an activated surface for metallization is obtained.

A method for manufacturing a surge absorbing device is provided. The method includes providing an elongate ceramic tube having a hollow space defined therein and having open and opposite first and second end; forming a first plating layer and a second plating layer on the first end and the second end, respectively; placing a surge absorbing element within the hollow space within the ceramic tube; disposing first and second brazing rings on the first plating layer and the second plating layer, respectively; disposing first and second sealing electrodes on the first and second brazing rings respectively; and melting the first and second brazing rings in an inert gas atmosphere to attach the first and second sealing electrodes onto the first plating layer and the second plating layer, respectively.

Methods, systems, and apparatus for coating the internal surface of nano-scale cavities on a substrate are contemplated. A first fluid of high wettability is applied to the nano-scale cavity, filling the cavity. A second fluid carrying a conductor or a catalyst is applied over the opening of the nano-scale cavity. The second fluid has a lower vapor pressure than the first fluid. The first fluid is converted to a gas, for example by heating the substrate. The gas exits the nano-scale cavity, creating a negative pressure or vacuum in the nano-scale cavity. The negative pressure draws the second fluid into the nano-scale cavity. The conductor is deposited on the interior surface of the nano-scale cavity, preferably less than 10 nm thick.

A multilayer wiring forming method includes forming, in a via 70 formed at a preset position in an insulating film 60 provided on a wiring 50 of a substrate, the via 70 being extended to the wiring 70, a monomolecular film 80 on a bottom surface 73 at which the wiring 50 is exposed; forming a barrier film 81 on a side surface 72 of the via 70; removing the monomolecular film 80; and forming an electroless plating film 82 from the bottom surface 73 of the via 70 by using the wiring 50 exposed at the bottom surface 73 of the via 70 as the catalyst.