C04B35/62823

Polycrystalline abrasive compacts

A method of manufacturing polycrystalline abrasive elements consisting of micron, sub-micron or nano-sized ultrahard abrasives dispersed in micron, sub-micron or nano-sized matrix materials. A plurality of ultrahard abrasive particles having vitreophilic surfaces are coated with a matrix precursor material in a refined colloidal process and then treated to render them suitable for sintering. The matrix precursor material can be converted to an oxide, nitride, carbide, oxynitride, oxycarbide, or carbonitride, or an elemental form thereof. The coated ultrahard abrasive particles are consolidated and sintered at a pressure and temperature at which they are crystallographically or thermodynamically stable.

Multilayer type electronic component

A multilayer electronic component having a plurality of laminated dielectric layers and inner electrode layers. The dielectric layers have a plurality of crystal grains including first regions where Re is dissolved in a solid state; and second regions where Re is not dissolved in the solid state. A median size of the crystal grains to an average thickness of the dielectric layers is 0.5≤t≤0.7. A ratio of a sum of cross sectional areas of the first regions to those of the plurality of crystal grains is 0.7≤s≤0.9. When a total amount of Ti, Zr, and Hf is 100 molar parts in the dielectric layers, a sum of the Zr and the Hf is 0≤a≤1.0; an amount b of Si is 0.1≤b≤1.0; an amount c of Re is 0.5≤c≤10.0; and a ratio m of a total of Ba and Re to a total of Ti, Zr, and Hf is 0.990≤m≤1.050.

MULTILAYER CERAMIC CAPACITOR AND DIELECTRIC MATERIAL
20210383973 · 2021-12-09 ·

A multilayer ceramic capacitor includes a multilayer structure having a substantially rectangular parallelepiped shape and including dielectric layers and internal electrode layers that are alternately stacked, the dielectric layers being mainly composed of BaTiO.sub.3, the internal electrode layers being alternately exposed to two edge faces of the multilayer chip opposite to each other. A Zr/Ti ratio is 0.02 or more and 0.10 or less in a capacity section. A Ba/Ti ratio is more than 0.900 and less than 1.010 in the capacity section. A Eu/Ti ratio is 0.005 or more and 0.05 or less in the capacity section. A Mn/Ti ratio is 0.0005 or more and 0.05 or less in the capacity section. A total amount of a rare earth element or rare earth elements is less than the amount of Eu.

Sintered material and method of producing same

A sintered material includes a first phase and a second phase, wherein the first phase is composed of cubic boron nitride particles, and the following relational expressions are satisfied when more than or equal to two cubic boron nitride particles adjacent to and in direct contact with each other among the cubic boron nitride particles are defined as a contact body, Di represents a length of an entire perimeter of the contact body, n represents the number of contact locations at which the cubic boron nitride particles are in direct contact with each other, d.sub.k represents a length of each of the contact locations, and Σd.sub.k (where k=1 to n) represents a total length of the contact locations: Dii=Di+(2×Σd.sub.k (where k=1 to n)); and [(Dii−Di)/Dii]×100≤50.

DIELECTRIC MATERIAL, MULTILAYER CERAMIC ELECTRONIC DEVICE, MANUFACTURING METHOD OF DIELECTRIC MATERIAL, AND MANUFACTURING METHOD OF MULTILAYER CERAMIC ELECTRONIC DEVICE
20230250024 · 2023-08-10 ·

A dielectric material includes a main component including barium titanate, a first additive containing zirconium in an amount of 2 at % or more and 10 at % or less with respect to titanium of the barium titanate, a second additive containing 0.2 at % or more and 3.5 at % or less of europium with respect to titanium of the barium titanate, rare earth elements other than europium being less than europium, a third additive containing 0.5 at % or more and 4.5 at % or less of manganese with respect to titanium of the barium titanate, and a fourth additive containing at least one of strontium and calcium in an amount of 0.1 at % or more and 3 at % or less with respect to titanium in the barium titanate.

CERAMIC COMPOSITES AND METHODS OF MAKING AND USING THE SAME
20220119316 · 2022-04-21 ·

The present disclosure provides for ceramic composite materials and methods of making ceramic composite materials. In an aspect, the ceramic composite materials can be made of polymer derived ceramics (PDCs) as the matrix, while substrates can be used as the microwave absorbing phases.

METHODS OF MAKING NANOPOWDERS, NANOCERAMIC MATERIALS AND NANOCERAMIC COMPONENTS
20230322628 · 2023-10-12 ·

Disclosed are methods of forming a chamber component for a process chamber. The methods may include filling a mold with nanoparticles or plasma spraying nanoparticles, where at least a portion of the nanoparticles include a core particle and a thin film coating over the core particle. The core particle and thin film are formed of, independently, a rare earth metal-containing oxide, a rare earth metal-containing fluoride, a rare earth metal-containing oxyfluoride, or combinations thereof. The nanoparticles may have a donut-shape having a spherical form with indentations on opposite sides. The methods also may include sintering the nanoparticles to form the chamber component and materials. Further described are chamber components and coatings formed from the described nanoparticles.

Multilayer ceramic capacitor and dielectric material

A multilayer ceramic capacitor includes a multilayer structure having a substantially rectangular parallelepiped shape and including dielectric layers and internal electrode layers that are alternately stacked, the dielectric layers being mainly composed of BaTiO.sub.3, the internal electrode layers being alternately exposed to two edge faces of the multilayer chip opposite to each other. A Zr/Ti ratio is 0.02 or more and 0.10 or less in a capacity section. A Ba/Ti ratio is more than 0.900 and less than 1.010 in the capacity section. A Eu/Ti ratio is 0.005 or more and 0.05 or less in the capacity section. A Mn/Ti ratio is 0.0005 or more and 0.05 or less in the capacity section. A total amount of a rare earth element or rare earth elements is less than the amount of Eu.

Thermoelectric Nanocomposite Materials

Thermoelectric (TE) nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected interpenetrating networks including nanocrystalline networks. The TE nanocomposite material can be in the form of a bulk solid having semiconductor nanocrystallites that form an electrically conductive network within the material. In other embodiments, the TE nanocomposite material can be a nanocomposite thermoelectric material having one network of p-type or n-type semiconductor domains and a low thermal conductivity semiconductor or dielectric network or domains separating the p-type or n-type domains that provides efficient phonon scattering to reduce thermal conductivity while maintaining the electrical properties of the p-type or n-type semiconductor.

Grain boundary enhanced UN and U.SUB.3.Si.SUB.2 .pellets with improved oxidation resistance

A method of forming a water resistant boundary on a fissile material for use in a water cooled nuclear reactor is described. The method comprises mixing a powdered fissile material selected from the group consisting of UN and U.sub.3Si.sub.2 with an additive selected from oxidation resistant materials having a melting or softening point lower than the sintering temperature of the fissile material, pressing the mixed fissile and additive materials into a pellet, sintering the pellet to a temperature greater than the melting point of the additive. Alternatively, if the melting point of the oxidation resistant particles is greater than the sintering temperature of UN or U.sub.3Si.sub.2, then the oxidation resistant particles can have a particle size distribution less than that of the UN or U.sub.3Si.sub.2.