Grains for the production of a sintered refractory product, a batch for the production of a sintered refractory product, a process for the production of a sintered refractory product and a sintered refractory product

A sensor element of a gas sensor includes: an element base which is a ceramic structured body including a detection part of detecting a target measurement gas component; an outer protective layer which is a porous layer provided in at least a part of an outermost peripheral portion of the element base; and an inner protective layer which is a porous layer having a degree of porosity of 30% to 85%, which is larger than a degree of porosity of the outer protective layer, inside the outer protective layer, wherein an average fine pore diameter of the inner protective layer is equal to or larger than 0.5 μm and equal to or smaller than 5.0 μm.

A dielectric composition includes a base material powder including barium titanate (BaTiO.sub.3), and zirconium (Zr) within a range from greater than 0.5 moles to 1.5 moles, with respect to 100 moles of the base material powder. In addition, a multilayer capacitor includes the dielectric composition.

A manufacturing process is provided in which material is supported within a chamber. This material includes a plurality of discrete metal particles and ceramic disposed between at least some of the metal particles. At least a portion of the material is solidified together using an additive manufacturing system to form an object.

A multilayer electronic component having a plurality of laminated dielectric layers and inner electrode layers. The dielectric layers have a plurality of crystal grains including first regions where Re is dissolved in a solid state; and second regions where Re is not dissolved in the solid state. A median size of the crystal grains to an average thickness of the dielectric layers is 0.5t0.7. A ratio of a sum of cross sectional areas of the first regions to those of the plurality of crystal grains is 0.7s0.9. When a total amount of Ti, Zr, and Hf is 100 molar parts in the dielectric layers, a sum of the Zr and the Hf is 0a1.0; an amount b of Si is 0.1b1.0; an amount c of Re is 0.5c10.0; and a ratio m of a total of Ba and Re to a total of Ti, Zr, and Hf is 0.990m1.050.

A surface-treated ceramic powder includes a plurality of ceramic particles and a surface-treating material. Each of the ceramic particles is at least partially coated by the surface-treating material, wherein the ceramic particles have an average particle diameter ranging from 10 micrometer (m) to 100 m, and the surface-treating material is made of metal, metal oxide or the combination thereof.

A dielectric composition includes a base material powder including barium titanate (BaTiO.sub.3), and zirconium (Zr) within a range from greater than 0.5 moles to 1.5 moles, with respect to 100 moles of the base material powder. In addition, a multilayer capacitor includes the dielectric composition.

A multilayer ceramic electronic component includes: a body part including dielectric layers and internal electrodes disposed to face each other with respective dielectric layers interposed therebetween; and external electrodes disposed on an outer surface of the body part and electrically connected to the internal electrodes. The dielectric layer includes grains including: a semiconductive or conductive grain core region containing a base material represented by ABO.sub.3, where A is at least one of Ba, Sr, and Ca, and B is at least one of Ti, Zr, and Hf, and a doping material including a rare earth element; and an insulating grain shell region enclosing the grain core region.

A sintered material includes a first phase and a second phase, wherein the first phase is composed of cubic boron nitride particles, and the following relational expressions are satisfied when more than or equal to two cubic boron nitride particles adjacent to and in direct contact with each other among the cubic boron nitride particles are defined as a contact body, Di represents a length of an entire perimeter of the contact body, n represents the number of contact locations at which the cubic boron nitride particles are in direct contact with each other, d.sub.k represents a length of each of the contact locations, and d.sub.k (where k=1 to n) represents a total length of the contact locations: Dii=Di+(2d.sub.k (where k=1 to n)); and [(DiiDi)/Dii]10050.

Thermoelectric (TE) nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected interpenetrating networks including nanocrystalline networks. The TE nanocomposite material can be in the form of a bulk solid having semiconductor nanocrystallites that form an electrically conductive network within the material. In other embodiments, the TE nanocomposite material can be a nanocomposite thermoelectric material having one network of p-type or n-type semiconductor domains and a low thermal conductivity semiconductor or dielectric network or domains separating the p-type or n-type domains that provides efficient phonon scattering to reduce thermal conductivity while maintaining the electrical properties of the p-type or n-type semiconductor.