A method of making a ceramic matrix composite that exhibits chemical resistance has been developed. The method comprises depositing a compliant layer comprising boron nitride, silicon-doped boron nitride, and/or pyrolytic carbon on silicon carbide fibers, depositing a barrier layer having a high contact angle with molten silicon on the compliant layer, and depositing a wetting layer comprising silicon carbide, boron carbide, and/or pyrolytic carbon on the barrier layer. After depositing the wetting layer, a fiber preform comprising the silicon carbide fibers is infiltrated with a slurry. After slurry infiltration, the fiber preform is infiltrated with a melt comprising silicon, and then the melt is cooled, thereby forming a ceramic matrix composite.

A method of making a ceramic matrix composite that exhibits moisture and environmental resistance has been developed. The method includes depositing a diffusion barrier layer comprising boron nitride on silicon carbide fibers and depositing a moisture-tolerant layer comprising silicon-doped boron nitride on the diffusion barrier layer, where a thickness of the moisture-tolerant layer is from about 3 to about 300 times a thickness of the diffusion barrier layer. Thus, a compliant multilayer including the moisture-tolerant layer and the diffusion barrier layer is formed. A wetting layer comprising silicon carbide, boron carbide, and/or pyrolytic carbon is deposited on the compliant multilayer layer. After depositing the wetting layer, a fiber preform comprising the silicon carbide fibers is infiltrated with a slurry. After slurry infiltration, the fiber preform is infiltrated with a melt comprising silicon and then the melt is cooled, thereby forming a ceramic matrix composite.

A method of depositing silicon carbide on a preform to form a ceramic matrix composite comprises placing the preform into a reaction vessel, removing air from the reaction vessel and backfilling the reaction vessel with an inert gas to an operating pressure. The reaction vessel and the preform are heated to an operating temperature. A carrier gas and precursor materials are heated to a preheat temperature outside of the reaction vessel. The carrier gas and the precursor materials are introduced to the reaction vessel in a specified ratio. Off gasses, the precursor materials that are unspent, and the carrier gas are removed from the reaction vessel to maintain the specified ratio of the precursor materials in the reaction vessel.

A method is provided in which a resin coating is applied to a surface of a preform. The resin coating includes a carbonaceous resin and a particulate. The preform is added to a tooling. The preform, which is positioned in the tooling, is cured. The tooling is removed. The resin coating on the surface of the preform is pyrolyzed to form a resin carbon-char layer on the surface of the preform. The preform and the resin carbon-char layer are infiltrated with silicon to form a ceramic matrix composite (CMC) component including a layer of silicon carbide. During the infiltration, the silicon reacts with carbon in the resin carbon-char layer to form the layer of silicon carbide on the preform.

Disclosed is a modified preceramic polymer having a polymer backbone consisting of silicon or a combination of silicon and carbon; and a pendant modifier bonded to the backbone wherein the modifier includes silicon, boron, aluminum, a transition metal, a refractory metal, or a combination thereof. The modified preceramic polymer can be used to form a ceramic matrix composite.

The disclosed materials, methods, and apparatus, provide novel ultra-high temperature materials (UHTM) in fibrous forms/structures; such “fibrous materials” can take various forms, such as individual filaments, short-shaped fiber, tows, ropes, wools, textiles, lattices, nano/microstructures, mesostructured materials, and sponge-like materials. At least four important classes of UHTM materials are disclosed in this invention: (1) carbon, doped-carbon and carbon alloy materials, (2) materials within the boron-carbon-nitride-X system, (3) materials within the silicon-carbon-nitride-X system, and (4) highly-refractory materials within the tantalum-hafnium-carbon-nitride-X and tantalum-hafnium-carbon-boron-nitride-X system. All of these material classes offer compounds/mixtures that melt or sublime at temperatures above 1800° C.—and in some cases are among the highest melting point materials known (exceeding 3000° C.). In many embodiments, the synthesis/fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical precursor mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). Methods for controlling the growth, composition, and structures of UHTM materials through control of the thermal diffusion region are disclosed.

Porous aluminum-containing ceramic bodies are treated to form acicular mullite crystals onto the surfaces of their pores. The crystals are formed by contacting the body with a fluorine-containing gas or a source of both fluorine and silicon atoms to form fluorotopaz at the surface of the pores, and then decomposing the fluorotopaz to form acicular mullite crystals. This process allows the surface area of the ceramic body to be increased significantly while retaining the geometry (size, shape, general pore structure) of the starting body. The higher surface area makes the body more efficient as a particulate filter and also allows for easier introduction of catalytic materials.

A multilayer interface coating for composite material fibers includes a first coating layer deposited onto a fiber and a second coating layer deposited onto the first coating layer.

A method of preparing a fiber for use in forming a ceramic matrix composite material comprises the steps of removing a polymer coating from an outer surface of glass or ceramic fibers by providing heated and humidified gas across the glass or ceramic fibers for a period of time.

A method of chemical vapor infiltration or deposition includes forming silicon carbide in pores of a porous substrate or on a surface of a substrate, the substrate being placed in a reaction enclosure, the silicon carbide being formed from a gas phase introduced into the reaction enclosure, the gas phase including a reagent compound that is a precursor of silicon carbide and that has the following formula ##STR00001##
in which n is an integer equal to 0 or 1; m is an integer lying in the range 1 to 3; p is an integer lying in the range 0 to 2 with m+p=3; and R designates —H or —CH.sub.3; a ratio C/Si between the number of carbon atoms and the number of silicon atoms in the introduced gas phase lying in the range 2 to 3.