A rotation driving mechanism includes a turntable configured to rotate about a first axis, and a rotating plate disposed along a circumferential direction of the turntable and configured to rotate about a second axis independently of a rotation of the turntable. A driving plate is coaxially disposed with the first axis and is rotatable differently in rotational direction and rotational speed from the rotation of the turntable. A trajectory plate is fixed to the driving plate and disposed in the vicinity of the second axis of the rotating plate. The trajectory plate includes a rolling trajectory groove in a surface. The trajectory groove has a curved shape in a plan view. A horizontal rotating member is coupled to and fixed to the rotating plate and engaged with the rolling trajectory groove. The horizontal rotating member rotates the rotating plate by moving and rolling through the rolling trajectory groove.

Apparatus for atomic layer deposition on a surface of a substrate includes a precursor injector head. The precursor injector head includes a precursor supply and a deposition space that in use is bounded by the precursor injector head and the substrate surface. The precursor injector head is arranged for injecting a precursor gas from the precursor supply into the deposition space for contacting the substrate surface. The apparatus is arranged for relative motion between the deposition space and the substrate in a plane of the substrate surface. The apparatus is provided with a confining structure arranged for confining the injected precursor gas to the deposition space adjacent to the substrate surface.

A system. The system may include a first zone into which a first precursor is introduced; a second zone into which a second precursor is introduced; a third zone between the first zone and the second zone and in which a reactive species is generated; a fourth zone between the first zone and the third zone; a fifth zone between the second zone and the third zone; wherein a process gas is introduced into the fourth zone and the fifth zone; wherein the reactive species and the first precursor is mixed in the fourth zone and the reactive species and the second precursor is mixed in the fifth zone; and a substrate transport mechanism.

Embodiments described herein relate to methods for preparing catalysts and catalyst supports. In one embodiment, transition metal carbide materials, having a nanotube like morphology, are utilized as a support for a precious metal catalyst, such as platinum. Embodiments described herein also relate to proton exchange membrane fuel cells that incorporate the catalysts described herein.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a space for treating a substrate therein; a support unit for supporting the substrate within the chamber; and an insulation member having a space of a predetermined volume therein.

A thin film deposition system includes a vacuum-preloaded gas bearing deposition head positioned in an external environment having an ambient pressure, the deposition head having an output face including a plurality of source openings through which gaseous materials are supplied and one or more exhaust openings. An exhaust pressure at the exhaust openings is less than ambient pressure, and a source pressure at the source openings is greater than that at the exhaust openings, with the pressure at the outermost source openings being greater than ambient pressure. A motion control system moves a substrate unit over the output face in the in-track direction without constraining its motion in a direction normal to the output face to a point where a center of gravity of the substrate unit is beyond the first edge of the output face.

Described herein is a technique capable of improving a uniformity of the characteristics of a film formed on a surface of a substrate by a rotary type apparatus. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a substrate support provided in the process chamber and including a plurality of placement parts on which the substrate is placed; a main nozzle provided so as to face a placement part among the plurality of the placement parts and including a first portion where no hole is provided so as to thermally decompose a process gas; and an auxiliary nozzle provided so as to face the placement part and including a second portion where no hole is provided so as to thermally decompose the process gas.

A substrate processing device according to an embodiment of the present invention includes a disk part disposed in a chamber in which a heating means is provided, and a pocket part installed on one surface of the disk part and on which a substrate is seated. A heat hole through which heat generated by the heating means passes may be formed on an installation surface of the disk part on which the pocket part is installed, or a gear hole through which the heat of the heating means passes may be formed in a pocket gear facing the disk part.

An apparatus that performs a film forming process includes: a rotary table having one surface on which substrates are placed and for revolving the substrates around a rotary shaft; a vacuum container configured to accommodate the rotary table and configured such that a space formed between the vacuum container and the one surface is separated into a first processing region and a second processing region, and the substrates repeatedly and alternately pass through the first and second processing regions; a vacuum chuck mechanism provided in the rotary table and including suction ports opened to placement regions on which the substrates are placed, to suction and fix the substrates, and suction flow paths provided to communicate with the suction ports; and a switching mechanism configured to switch an operation status of the vacuum chuck mechanism between a full fixed state and a selective release state.

A substrate processing apparatus includes: a rotary table provided in a processing container; a rotation mechanism configured to rotate the rotary table; recesses provided on an upper surface of the rotary table along a rotation direction of the rotary table and configured to accommodate substrates, respectively; a processing gas supply provided above the rotary table and configured to supply a processing gas onto the rotary table to process each of the substrates; a heater configured to heat the rotary table; a support configured to support the substrates in upper regions above the recesses so that the heater heats the substrates before being accommodated in the recesses; and an elevating mechanism configured to raise and lower the support relative to the rotary table so that the substrates are collectively moved from the upper regions into the recesses.