E04B1/346

DOME THEATER RIDE SYSTEM AND METHOD
20180311587 · 2018-11-01 ·

A dome ride system includes a dome, a cartridge, receptacles of the cartridge configured to secure users, a media system configured to communicate a narrative to the users disposed within the cartridge utilizing an interior surface of the dome to display a visual aspect of the narrative, and a drive system. The cartridge is configured to be disposed within the dome, the dome is engaged with the drive system and configured to rotate in multiple directions about a center of the dome in response to input from the drive system, and the cartridge is configured to be coupled to and rotate with the dome.

DOME THEATER RIDE SYSTEM AND METHOD
20180311587 · 2018-11-01 ·

A dome ride system includes a dome, a cartridge, receptacles of the cartridge configured to secure users, a media system configured to communicate a narrative to the users disposed within the cartridge utilizing an interior surface of the dome to display a visual aspect of the narrative, and a drive system. The cartridge is configured to be disposed within the dome, the dome is engaged with the drive system and configured to rotate in multiple directions about a center of the dome in response to input from the drive system, and the cartridge is configured to be coupled to and rotate with the dome.

CRITICAL DIMENSION SHRINK THROUGH SELECTIVE METAL GROWTH ON METAL HARDMASK SIDEWALLS

A method for fabricating a self-aligned via structure includes forming a tri-layer mask on an ILD layer over a lower metal wiring layer, the tri-layer mask includes first and second insulating layers and a metal layer in between the insulating layers; defining a trench pattern through the first insulating layer and metal layer, the trench pattern having a first width; defining a first via pattern in a lithographic mask over the trench pattern, the first via pattern having a second width that is larger than the first width; growing a metal capping layer on an exposed sidewall of the trench pattern to decrease the first width to a third width that defines a second via pattern; transferring the trench pattern into the ILD layer to form a trench; and transferring the second via pattern through the ILD layer and into the metal wiring layer to form a via.

CRITICAL DIMENSION SHRINK THROUGH SELECTIVE METAL GROWTH ON METAL HARDMASK SIDEWALLS

A method for fabricating a self-aligned via structure includes forming a tri-layer mask on an ILD layer over a lower metal wiring layer, the tri-layer mask includes first and second insulating layers and a metal layer in between the insulating layers; defining a trench pattern through the first insulating layer and metal layer, the trench pattern having a first width; defining a first via pattern in a lithographic mask over the trench pattern, the first via pattern having a second width that is larger than the first width; growing a metal capping layer on an exposed sidewall of the trench pattern to decrease the first width to a third width that defines a second via pattern; transferring the trench pattern into the ILD layer to form a trench; and transferring the second via pattern through the ILD layer and into the metal wiring layer to form a via.

Cascading roof with interdependent roof panel sections

A roof system including a frame, a plurality of roof panels, wherein each roof panel is connected to the frame and is rotatable with respect to the frame, and a holding mechanism for holding a first roof panel among the plurality of roof panels in a closed position, wherein each roof panel among the plurality of roof panels overlaps at least one adjacent roof panel among the plurality of roof panels, and wherein release of the holding mechanism causes each of the roof panels to rotate toward an open position in a sequential manner.

Cascading roof with interdependent roof panel sections

A roof system including a frame, a plurality of roof panels, wherein each roof panel is connected to the frame and is rotatable with respect to the frame, and a holding mechanism for holding a first roof panel among the plurality of roof panels in a closed position, wherein each roof panel among the plurality of roof panels overlaps at least one adjacent roof panel among the plurality of roof panels, and wherein release of the holding mechanism causes each of the roof panels to rotate toward an open position in a sequential manner.

Fire-fighting wall-casing system
10000920 · 2018-06-19 ·

Fire-fighting wall casing for closed environments, constituted of a frame (4) housing, in its upper portion, a soffit (3) which slides downwards by way of a system of pulleys placed within the frame (4), in its central portion a shutter (1) which may be opened by a side-hinge system, in its lower portion a railing (2) sliding upwards by way of a side guide (8) a protection grid (7) which, after being disconnected from the railing, may be removed by way of side retainers; a magnetic switch (6) and a smoke and/or seismic detector being positioned in its upper portion; a fume deflector (9), intended for extracting fumes from the upper floors, being positioned above the casing.

PARTITION SYSTEM
20180142467 · 2018-05-24 ·

According to one embodiment, there is provided a partition system including a first screen, a post that rotatably supports the first screen around a vertical axis line, and a second screen that is rotatably supported by the post around the vertical axis line.

PARTITION SYSTEM
20180142467 · 2018-05-24 ·

According to one embodiment, there is provided a partition system including a first screen, a post that rotatably supports the first screen around a vertical axis line, and a second screen that is rotatably supported by the post around the vertical axis line.

Critical dimension shrink through selective metal growth on metal hardmask sidewalls

A method for fabricating a self-aligned via structure includes forming a tri-layer mask on an ILD layer over a lower metal wiring layer, the tri-layer mask includes first and second insulating layers and a metal layer in between the insulating layers; defining a trench pattern through the first insulating layer and metal layer, the trench pattern having a first width; defining a first via pattern in a lithographic mask over the trench pattern, the first via pattern having a second width that is larger than the first width; growing a metal capping layer on an exposed sidewall of the trench pattern to decrease the first width to a third width that defines a second via pattern; transferring the trench pattern into the ILD layer to form a trench; and transferring the second via pattern through the ILD layer and into the metal wiring layer to form a via.