Treatment systems and methods for capable of extracting or extracting and degrading trapped PCBs within a variety of building materials.

Treatment systems and methods for capable of extracting or extracting and degrading trapped PCBs within a variety of building materials.

Treatment systems and methods for capable of extracting or extracting and degrading trapped PCBs within a variety of building materials.

Systems and methods are provided for degrading PFAS in a semi-solid sample. The semi-solid sample includes PFAS molecules in a partially liquid solution. An electron donor, and optionally a surfactant, are introduced into the mixture, forming micelles. An electron donor associates with the micelle surface and releases hydrated electrons upon exposure to UV light to initiate the reductive defluorination reaction, resulting in fluoride, water, and simple carbon compounds.

Systems and methods are provided for degrading PFAS in a semi-solid sample. The semi-solid sample includes PFAS molecules in a partially liquid solution. An electron donor, and optionally a surfactant, are introduced into the mixture, forming micelles. An electron donor associates with the micelle surface and releases hydrated electrons upon exposure to UV light to initiate the reductive defluorination reaction, resulting in fluoride, water, and simple carbon compounds.

A method for decontaminating residual halogen species in a processed metal-containing layer without breaking vacuum includes processing a metal-containing layer (such as a metal oxide layer) using a halogen-containing process gas to form a processed metal-containing layer that includes residual halogen species, and chemically modifying the residual halogen species to form modified residual species using a reactive gas to decontaminate the residual halogen species. Decontamination may include neutralization and/or removal of the residual halogen species. The metal-containing layer may be an organometal oxide photoresist and processing with the halogen-containing process gas may form a patterned photoresist layer contaminated with the residual halogen species. The modified residual species may be further treated using dinitrogen plasma (pure or with additional gases) and/or additional reactive gases, both of which may be combined with maintaining and higher or lower temperature during the treatment.

A method for decontaminating residual halogen species in a processed metal-containing layer without breaking vacuum includes processing a metal-containing layer (such as a metal oxide layer) using a halogen-containing process gas to form a processed metal-containing layer that includes residual halogen species, and chemically modifying the residual halogen species to form modified residual species using a reactive gas to decontaminate the residual halogen species. Decontamination may include neutralization and/or removal of the residual halogen species. The metal-containing layer may be an organometal oxide photoresist and processing with the halogen-containing process gas may form a patterned photoresist layer contaminated with the residual halogen species. The modified residual species may be further treated using dinitrogen plasma (pure or with additional gases) and/or additional reactive gases, both of which may be combined with maintaining and higher or lower temperature during the treatment.