The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a supply line having a first open/close valve installed thereon and configured to supply a treating fluid to the treating space; a heater installed on the supply line and configured to heat the treating fluid; an exhaust line having a second open/close valve installed thereon and configured to exhaust the treating space; and, a controller configured to control the first open/close value and the second open/close valve such that the treating fluid heated is supplied to and exhausted from the treating space before a treating process is performed on a substrate in the treating space.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a substrate support unit configured to support a substrate in the treating space; and a fluid supply unit configured to supply a fluid in a supercritical state to the treating space, wherein the fluid supply unit comprises: a supply line provided at a top wall of the chamber; and a discharge unit installed at the top wall of the chamber and configured to discharge a fluid to a substrate, and wherein the discharge unit comprises: a body having a discharge fluid channel for the fluid; a nozzle plate provided at a discharge end of the body; and a blocking plate within the discharge fluid channel and spaced apart from the nozzle plate.

A method for drying a wafer at room temperature includes a cleaning step, a reacting step and a pressure releasing step. The cleaning step includes putting a processing workpiece into a cleaning solvent. The reacting step includes putting the processing workpiece along with the cleaning solvent into a reaction chamber, implanting a supercritical fluid into the reaction chamber, and increasing a pressure of the reaction chamber to dissolve the cleaning solvent in the supercritical fluid. A critical temperature of the supercritical fluid is below room temperature. The pressure releasing step includes releasing the pressure of the reaction chamber and discharging the supercritical fluid together with the cleaning solvent out of the reaction chamber, after completely dissolving the cleaning solvent in the supercritical fluid.

A substrate processing method includes: a preparing process of preparing a substrate in which a zirconium oxide film as a mask has been formed on a laminated film and dry-etched into a given shape; after the preparing process, a mask removing process of removing the zirconium oxide film by supplying a mask removing liquid containing sulfuric acid as a main component to the substrate; and after the mask removing process, a drying process of drying a surface of the substrate that is wet with a rinsing liquid.

The inventive concept provides a method for treating a substrate. The method for treating a substrate comprises: a pressurization step for increasing a pressure of an inner space of a chamber by supplying a treating fluid to the inner space, after taking the substrate into the inner space; a flow step for generating a flow of the treating fluid by combination of supplying and discharging the treating fluid to and from the inner space; and a depressurization step of decreasing the pressure of the inner space by discharging the treating fluid from the inner space, and wherein the pressurization step comprises: a bottom side supply process for increasing the pressure of the inner space by supplying the treating fluid to a backside of the substrate taken into the inner space;

and a top side supply process of increasing the pressure of the inner space by supplying the treating fluid to a top side of the substrate taken into the inner space.

An apparatus for treating a substrate includes a body having an inner space in which the substrate is dried by a drying fluid in a supercritical state, a fluid supply unit that supplies the drying fluid into the inner space, a fluid exhaust unit that releases the drying fluid from the inner space, and a controller. The controller controls the fluid supply unit and the fluid exhaust unit to perform a pressure-raising step of raising pressure in the inner space to a set pressure and a flow step of generating a flow of the drying gas in the inner space by releasing, by the fluid exhaust unit, the drying fluid from the inner space while the fluid supply unit supplies the drying fluid into the inner space.

A substrate processing apparatus for drying a substrate by substituting a liquid film of a drying liquid formed on the substrate with a supercritical fluid incudes: a pressure container configured to accommodate the substrate on which the liquid film is formed; a discharge line configured to discharge a fluid inside the pressure container; a depressurizing valve provided in a middle of the discharge line; and a concentration measurement part configured to measure a concentration of vapor of the drying liquid in the fluid flowing through the discharge line, wherein the concentration measurement part is provided on a downstream side of the depressurizing valve of the discharge line and measures the concentration of the drying liquid in the fluid depressurized by the depressurizing valve.

A processing liquid containing a sublimable material is supplied to a front surface of a substrate to which a liquid adheres to form a liquid film. The liquid film is solidified into a solidified body. Nitrogen gas is supplied to the solidified body formed on the front surface of the substrate so that the flow rate thereof per unit area is constant over the entire surface of the substrate. The solidified body is sublimated uniformly over the entire surface of the substrate, and a gas-solid interface of the solidified body moves in a direction perpendicular to the front surface of the substrate. This precludes protrusions of a pattern from being pulled by the movement of the gas-solid interface of the solidified body, whereby the front surface of the substrate is dried well while the collapse of the pattern formed on the front surface of the substrate is prevented.

An upper flow passage 181 is connected to a buffer space 182. The upper flow passage 181 has a constant cross-sectional shape and a processing fluid flows as a laminar flow in the upper flow passage 181. On the other hand, the buffer space 182 has a larger flow passage cross-sectional area than the upper flow passage 181. Thus, the processing fluid flowing in the upper flow passage 181 is released at once into the wide buffer space 182, whereby the pressure of the processing fluid decreases. A backflow of the processing fluid from the buffer space 182 to the upper flow passage 181 is prevented due to this pressure difference and the magnitude of a flow passage resistance of the upper flow passage 181 viewed from the buffer space 182.

A method of processing a substrate includes disposing a substrate in a drying chamber, and supplying a fluid into the drying chamber in which the substrate is disposed. The supplying of the fluid into the drying chamber includes supplying a gas into the drying chamber, and supplying a supercritical fluid into the drying chamber after the supplying of the gas is started.