The invention relates to a tube furnace device for an atomizing furnace and to an analyzing apparatus comprising an atomizing furnace and a tube furnace device, in particular for atomic absorption spectrometry, the tube furnace device comprising a sample carrier means (11) and a bearing means (12) for supporting and forming electrical contact with the sample carrier means, the sample carrier means having a receiving tube (16) forming a tubular receiving space (17) for receiving an analyte, the sample carrier means having two bearing protrusions on the receiving tube for forming a connection with the bearing means, the bearing protrusions extending perpendicularly, preferably orthogonally, in relation to a longitudinal axis of the receiving tube, wherein the tube furnace device has a contact pressure means (13) via which a contact pressure force (14) can be exerted on the bearing protrusions in the direction of a passant line (20) in relation to a circular cross section (21) of the receiving tube.

The disclosure relates to a method for opening up electrochemical energy storage devices in connection with a subsequent recovery of valuable materials contained therein as secondary raw materials, in which method the energy storage devices are opened up by means of a thermal treatment system to remove the electrolytes and reactive substances, before the thermally treated material is subjected to processing, whereby secondary raw materials in the thermally treated material are separated from one another. The thermal treatment is performed in an indirectly heated furnace 2 under atmospheric pressure conditions or a slight overpressure relative to the ambient pressure of up to 20 mbar in a reducing atmosphere, and influence is exerted on the course of the thermal treatment process via the reducing atmosphere, as a control variable. Furthermore, a thermal treatment system is described for removing electrolytes and reactive substances in electrochemical energy storage devices and consequently for pyrolytic opening.

The disclosure relates to a method for opening up electrochemical energy storage devices in connection with a subsequent recovery of valuable materials contained therein as secondary raw materials, in which method the energy storage devices are opened up by means of a thermal treatment system to remove the electrolytes and reactive substances, before the thermally treated material is subjected to processing, whereby secondary raw materials in the thermally treated material are separated from one another. The thermal treatment is performed in an indirectly heated furnace 2 under atmospheric pressure conditions or a slight overpressure relative to the ambient pressure of up to 20 mbar in a reducing atmosphere, and influence is exerted on the course of the thermal treatment process via the reducing atmosphere, as a control variable. Furthermore, a thermal treatment system is described for removing electrolytes and reactive substances in electrochemical energy storage devices and consequently for pyrolytic opening.

Support device for a radiant pipe (TR), usable in thermal treatment furnaces, for lines for continuous galvanising and annealing of metal strips or sheets and/or other products made of steel and/or other metals or for revamping pre-existing furnaces, including a support for radiant pipe or shank and a furnace-side support or socket, wherein the support for the radiant pipe or shank includes at least one outer surface, facing—during use—towards the furnace-side support or socket and a thickness, wherein the furnace-side support or socket includes at least one first surface and one second surface, the latter facing—during use—towards the support for radiant pipe or shank, and a thickness, including at least one rotary means and at least one seat for housing the at least one rotary means.

There are provided a method for producing a photovoltaic element with stabilised efficiency, and a device which may be used to carry out the method, for example in the form of a specially adapted continuous furnace. A silicon substrate to be provided with an emitter layer and electrical contacts is thereby subjected to a stabilisation treatment step. In that step, hydrogen, for example from a hydrogenated silicon nitride layer, is introduced into the silicon substrate, for example within a zone (2) of maximum temperature. The silicon substrate may then purposively be cooled rapidly in a zone (3) in order to avoid hydrogen effusion. The silicon substrate may then purposively be maintained, for example in a zone (4), within a temperature range of from 230 C. to 450 C. for a period of, for example, at least 10 seconds. The previously introduced hydrogen may thereby assume an advantageous bond state. At the same time or subsequently, a regeneration may be carried out by generating excess minority charge carriers in the substrate at a temperature of at least 90 C., preferably at least 230 C. Overall, with the proposed method, a regeneration process in the production of a photovoltaic element may be accelerated significantly so that it may be carried out, for example, in a suitably modified continuous furnace.

A furnace for the heat treatment of a metal product includes constitutive elements, each having a thermal inertia property determined from physical parameters. The constitutive elements include walls delimiting at least partially the furnace, a heating unit for heating the metal product, and a rapid heating element for heating the metal product. The furnace also includes a control circuit for controlling the heating unit and/or the rapid heating element, based on one or more thermal inertia properties of one or more constitutive elements of the furnace, and at least based on a ground of a constitutive element of said furnace.

A furnace for the heat treatment of a metal product includes constitutive elements, each having a thermal inertia property determined from physical parameters. The constitutive elements include walls delimiting at least partially the furnace, a heating unit for heating the metal product, and a rapid heating element for heating the metal product. The furnace also includes a control circuit for controlling the heating unit and/or the rapid heating element, based on one or more thermal inertia properties of one or more constitutive elements of the furnace, and at least based on a ground of a constitutive element of said furnace.

The present disclosure relates to a tempering furnace for a glass sheet, which has a conveyor for the glass sheet, first convection blow means over the conveyor to heat the glass sheet by hot air jets blown on its top and/or bottom surface, and second convection blow means to help lead pressurized air from outside the tempering furnace to second blow nozzles from which air is discharged as jets towards the top and/or bottom surface of the glass sheet. The heating effect of the air jets on the glass sheet is adjustable by adjusting the feeding of electric current to electric elements inside blowing channels. Blow nozzles of the second convection blow means form blow zones. The heating effect on the glass sheet of the jets discharged from the second blow nozzles inside the blow zones is adjustable by adjusting the blowing pressure of feed pipes.

A microwave heating method using a microwave, including: controlling a frequency of the microwave, to form a single-mode standing wave; disposing an object to be heated in a magnetic field region where a strength of a magnetic field formed by the single-mode standing wave is uniform and maximum; and heating the object to be heated by magnetic heat generation by magnetic loss caused by an action of the magnetic field of the magnetic field region, and/or induction heating by an induced current generated in the object to be heated due to the magnetic field of the magnetic field region.

According to an example, in a method for producing a photovoltaic element with stabilised efficiency, a silicon substrate may be provided with an emitter layer and electrical contacts, which may be subjected to a stabilisation treatment step. Hydrogen from a hydrogenated silicon nitride layer may be introduced into the silicon substrate, for example, within a zone of maximum temperature. The silicon substrate may then be cooled rapidly in a zone in order to avoid hydrogen effusion. The silicon substrate may then be maintained, for example in a zone within a temperature range of from 230 C. to 450 C. for a period of, for example, at least 10 seconds. The previously introduced hydrogen may thereby assume an advantageous bond state. At the same time or subsequently, a regeneration may be carried out by generating excess minority charge carriers in the substrate at a temperature of at least 90 C., preferably at least 230 C.