A heater assembly having a top seal and a second seal configured to account for deviation in processing heights and motor runoff of a heater standoff. The top seal is positioned between a shield plate and a top plate and the bottom seal is positioned between a heater mounting base and the heater standoff.

The disclosure relates to substrate processing apparatus, with a first and second reactor, each reactor configured for processing a plurality of substrates; and, a substrate handling robot constructed and arranged to transfer substrates between a substrate cassette at a substrate transfer position and the first and second reactor. The apparatus is constructed and arranged with a maintenance area between the first and second reactors to allow maintenance of the reactors from the maintenance area to both the first and second reactor.

A heater and/or cooler chamber includes a heat storage block or chunk. In the block a multitude of parallel, stacked slit pockets each dimensioned to accommodate a single plate shaped workpiece. Workpiece handling openings of the slit pockets are freed and respectively covered by a door arrangement. The slit pockets are tailored to snuggly surround the plate shaped workpieces therein so as to establish an efficient heat transfer between the heat storage block or chunk and the workpieces to be cooled or heated.

The disclosure relates to substrate processing apparatus, with a first and second reactor, each reactor configured for processing a plurality of substrates; and, a substrate handling robot constructed and arranged to transfer substrates between a substrate cassette at a substrate transfer position and the first and second reactor. The apparatus is constructed and arranged with a maintenance area between the first and second reactors to allow maintenance of the reactors from the maintenance area to both the first and second reactor.

The disclosure relates to substrate processing apparatus, with a first and second reactor, each reactor configured for processing a plurality of substrates; and, a substrate handling robot constructed and arranged to transfer substrates between a substrate cassette at a substrate transfer position and the first and second reactor. The apparatus is constructed and arranged with a maintenance area between the first and second reactors to allow maintenance of the reactors from the maintenance area to both the first and second reactor.

A substrate support pedestal connectable to a shaft includes a thermally conductive body, a first fluid channel disposed within an outer zone of the thermally conductive body, and a second fluid channel disposed within an inner zone of the thermally conductive body. The first fluid channel and the second fluid channel are not in fluid communication with each other and are thermally isolated from each other by a thermal barrier within the substrate support channel.

An arrangement of linear heat lamps is provided which allows for localized control of temperature nonuniformities in a substrate during semiconductor processing. A reactor includes a substrate holder positioned between a top array and a bottom array of linear heat lamps. At least one lamp of the banks includes a filament having a varying density and power output along the length of the lamp. In particular, at least one lamp of the banks includes a filament having a higher filament winding density within a central portion of the lamp relative to peripheral portions of the lamp. In some embodiments, the at least one lamp is a central lamp extending across a central portion of the substrate heated by the lamp. Furthermore, at least one lamp of the banks has a higher power output within a central portion of the lamp than at peripheral portions of the lamp.

An arrangement of linear heat lamps is provided which allows for localized control of temperature nonuniformities in a substrate during semiconductor processing. A reactor includes a substrate holder positioned between a top array and a bottom array of linear heat lamps. At least one lamp of the arrays includes a filament having a varying density and power output along the length of the lamp. In particular, at least one lamp of the arrays includes a filament having a higher filament winding density within a central portion of the lamp relative to peripheral portions of the lamp. In some embodiments, the at least one lamp is a central lamp extending across a central portion of the substrate heated by the lamp. Furthermore, at least one lamp of the arrays has a higher power output within a central portion of the lamp than at peripheral portions of the lamp.

Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. In one or more embodiments, a process chamber comprises a first window, a second window, a substrate support disposed between the first window and the second window, and a motorized rotatable radiant spot heating source disposed over the first window and configured to provide radiant energy through the first window.

A substrate processing apparatus, comprising a substrate support (32) provided with a support surface (34) for supporting a substrate or a substrate carrier (24) thereon and a support heater (50) constructed and arranged to heat the support surface (34). The apparatus comprises a heat shield constructed and arranged to cover and shield the substrate support (32) when no substrate or substrate carrier (24) is on the support surface.