An inline thermal treatment system for thermally treating a continuous conductive product includes a first electrode configured to contact a continuous conductive product and a second electrode configured to contact the continuous conductive product such that a portion of the continuous conductive product is disposed between the first and second electrodes. The inline thermal treatment system includes a power source coupled to the first electrode and to the second electrode, wherein the power source is configured to apply an electrical bias between the first electrode and the second electrode to resistively heat the portion of the continuous conductive product disposed between the first and second electrodes.

An inline thermal treatment system for thermally treating a continuous conductive product includes a first electrode configured to contact a continuous conductive product and a second electrode configured to contact the continuous conductive product such that a portion of the continuous conductive product is disposed between the first and second electrodes. The inline thermal treatment system includes a power source coupled to the first electrode and to the second electrode, wherein the power source is configured to apply an electrical bias between the first electrode and the second electrode to resistively heat the portion of the continuous conductive product disposed between the first and second electrodes.

A method of making a hot surface igniter is described. A silicon carbide composition that includes both fines fraction and a coarse fraction is sintered in a nitrogen and argon reducing atmosphere in a manner that controls the incorporation of nitrogen with in the lattice of recrystallized silicon carbide. The controlled incorporation of nitrogen in the lattice provides enhanced control over heating and electrical properties, while simultaneously achieving a lower surface area fully recrystallized structure for oxidation resistance and long service life.

A method of making a hot surface igniter is described. A silicon carbide composition that includes both fines fraction and a coarse fraction is sintered in a nitrogen and argon reducing atmosphere in a manner that controls the incorporation of nitrogen with in the lattice of recrystallized silicon carbide. The controlled incorporation of nitrogen in the lattice provides enhanced control over heating and electrical properties, while simultaneously achieving a lower surface area fully recrystallized structure for oxidation resistance and long service life.

A method and apparatus for controlling the atmosphere of a multizone calcination (firing) furnace for production of high-quality nickel-rich cathode material for lithium-ion and solid-state batteries. A high-quality oxygen-rich atmosphere is maintained to ensure the quality of the cathode material. An atmosphere control system continuously measures and analyzes the composition of the calcination furnace atmosphere in different zones and adjusts the flowrate of oxygen-rich atmosphere into the furnace to optimize the calcination process.

A method and apparatus for controlling the atmosphere of a multizone calcination (firing) furnace for production of high-quality nickel-rich cathode material for lithium-ion and solid-state batteries. A high-quality oxygen-rich atmosphere is maintained to ensure the quality of the cathode material. An atmosphere control system continuously measures and analyzes the composition of the calcination furnace atmosphere in different zones and adjusts the flowrate of oxygen-rich atmosphere into the furnace to optimize the calcination process.

A method and system for doping semiconductor materials using microwave exposure. In some embodiments, the surface of a semiconductor substrate coated with a layer of dopant material is exposed to a beam of microwave radiation, with the frequency of the microwave radiation chosen to coincide with a microwave absorption resonance of the dopant. A gyrotron is a preferred source of monochromatic microwaves capable of delivering the appropriate the power density. Under this microwave exposure, the dopant heats up and diffuses into the semiconductor. Since only the dopant is selectively excited, the atoms of the crystal lattice remain cooler. Additional cooling can be provided by a flow of cooling gas onto the surface. When the electric field of the microwave exposure is high enough to overcome the potential barrier of interstitial diffusion within the crystal, the dopants migrate to vacancies in the crystal lattice, and the semiconductor material becomes activated.

A method and system for doping semiconductor materials using microwave exposure. In some embodiments, the surface of a semiconductor substrate coated with a layer of dopant material is exposed to a beam of microwave radiation, with the frequency of the microwave radiation chosen to coincide with a microwave absorption resonance of the dopant. A gyrotron is a preferred source of monochromatic microwaves capable of delivering the appropriate the power density. Under this microwave exposure, the dopant heats up and diffuses into the semiconductor. Since only the dopant is selectively excited, the atoms of the crystal lattice remain cooler. Additional cooling can be provided by a flow of cooling gas onto the surface. When the electric field of the microwave exposure is high enough to overcome the potential barrier of interstitial diffusion within the crystal, the dopants migrate to vacancies in the crystal lattice, and the semiconductor material becomes activated.

A method of generating a loaded layout in a vacuum furnace corresponding to an actual layout in the vacuum furnace during operation of the vacuum furnace may comprise receiving, via a processor, a visual data of a loading process of the vacuum furnace from a camera; comparing, via the processor, the visual data to a predetermined maximum capacity layout for the vacuum furnace; and arranging, via the processor, the visual data into the loaded layout in response to comparing the visual data.

A method of generating a loaded layout in a vacuum furnace corresponding to an actual layout in the vacuum furnace during operation of the vacuum furnace may comprise receiving, via a processor, a visual data of a loading process of the vacuum furnace from a camera; comparing, via the processor, the visual data to a predetermined maximum capacity layout for the vacuum furnace; and arranging, via the processor, the visual data into the loaded layout in response to comparing the visual data.