A substrate processing apparatus comprises: an inner tube (100) forming a processing space (S1) in which a plurality of substrates are stacked and processed in a vertical direction ; a heater unit (200) installed to surround at least a portion of the inner tube (100) to form a heating space (S2) between itself and the inner tube (100), and generating heat by receiving power from outside ; and an outer tube (300) in which the heater unit (200) is disposed to form an internal space (S3) between itself and the heater unit (200), and having at least one openable/closable opening (302) formed on a side thereof to allow external access to the internal space (S3), wherein the heater unit (200) is electrically connected to a power supply unit (700) that transfers power through the outer tube (300) at a position corresponding to the opening (302).

The present invention describes an improved process for the commercial scale production of high-quality catalyst materials. These improved processes allow for production of catalysts that have very consistent batch to batch property and performance variations. In addition these improved processes allow for minimal production losses (by dramatically reducing the production of fines or small materials as part of the production process). The improved process involves multiple steps and uses calcining ovens that allow for precisely control temperature increases where the catalyst is homogenously heated. The calcining gas is released into a separate heating chamber, which contains the recirculation fan and the heat source. Catalysts that may be produced using this improved process include but are not limited to catalysts that promote CO hydrogenation, reforming catalysts, Fischer Tropsch Catalysts, Greyrock GreyCat catalysts, catalysts that homologate methanol, catalysts that promote hydrogenation of carbon compounds, and other catalysts used in industry.

The invention relates to an equipment for semiconductor production, in particular to a heat treatment apparatus. The apparatus comprises a cooling unit (200), a heating unit (300) and a transmission unit (400). The cooling unit (200) comprises a cooling plate (210) for cooling a substrate (w), and the heating unit (300) comprises a heating plate (310) for heating the substrate (w). The transmission unit (400) comprises a transmission arm (410), a lifting module and a linear module. The transmission arm (410) supports the substrate (w) and transmits the substrate (w) between the cooling unit (200) and the heating unit (300). The transmission arm (410) is disposed on the lifting module, and the lifting module drives the transmission arm (410) to ascend and descend. The linear module drives the transmission arm (410) to transmit the substrate (w) between the cooling plate (210) and the heating plate (310). The internal space of the apparatus is optimized.