The present invention provides a high power LED chip back electrode integrated package module with a stand, comprising a substrate, a lens stand, and a tens made of glasses. The lens stand is provided above the substrate and wraps same, and is provided with a fixed cavity where the lens is placed; the lens is provided in the fixed cavity and is connected to the lens stand; the substrate comprises a first line layer, a first ceramic layer, and a first metal layer which are connected sequentially; a first electrode connection disk is provided at both ends of the first metal layer; the first electrode connection disk is connected to the first line layer, and is in pressure connection to an external component; the first line layer is provided with multiple first LED chip units; the lens is provided above the first LED chip units and corresponds to the position thereof. The present invention further provide another high power LED chip back electrode integrated package module with a stand. According to the present invention, the electrode connection disk is isolated from the outside to prevent external impurities from contaminating the electrode connection disk.

A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

A laser diode includes a semiconductor structure having an n-type layer, an active region, and a p-type layer. One of the n-type and p-type layers includes a lasing aperture thereon having an optical axis oriented perpendicular to a surface of the active region between the n-type and p-type layers. First and second contacts are electrically connected to the n-type and p-type layers, respectively. The first and/or second contacts are smaller than the lasing aperture in at least one dimension. Related arrays and methods of fabrication are also discussed.

A lighting device includes a light emitter, a light source, and a first light conductor arranged to conduct light from the light source to the light emitter, the light emitter including a translucent body and a first reflector, the first reflector being connected to or integral with the translucent body, the translucent body including at least a first emitter portion, the first emitter portion being shaped to define a first emitter lens, the first reflector being arranged to reflect light emitted from the first light conductor to exit the light emitter as a beam of light via the first emitter lens, the light emitter being rotatable with at least one degree of freedom relative to the first light conductor to direct the beam, where the lighting device includes a light detector, the light detector being arranged to receive light which enters the light emitter via the first emitter lens and is reflected by the first reflector.

A lighting device includes a light emitter with a spherical translucent body containing at least one reflector and defining large, combined incident and emission lenses, where the light emitter reflects and focuses light from a waveguide to project a beam onto a target surface, the light emitter is preferably slidably mounted for rotation on a support element which may include a circular aperture in a plate, and may be configured as a desk or stage lamp, a wall light, or a downlighter suspended beneath a ceiling, such that waveguide or light emitter may provide ambient or uplighting in addition to the beam.

A light-emitting device includes a lens of refractive index n having a spherical exit surface of radius R and a luminous element positioned such that at least a portion of an edge of an emitting surface of the luminous element lies on a sphere of radius R/n opposite the exit surface, whereby that portion of the edge of the emitting surface is aplanatically imaged by the spherical exit surface. The light-emitting device may further include one or more reflective sidewalls arranged to reflect a fraction of light emitted from the luminous element before it is refracted by the exit surface. A luminaire incorporating a housing and a light-emitting device of this type is also provided, which may include one or more additional optical elements such as reflectors or lenses to further direct and shape light from the light-emitting device.

A laser array includes a plurality of laser diodes arranged and electrically connected to one another on a surface of a non-native substrate. Respective laser diodes of the plurality of laser diodes have different orientations relative to one another on the surface of the non-native substrate. The respective laser diodes are configured to provide coherent light emission in different directions, and the laser array is configured to emit an incoherent output beam comprising the coherent light emission from the respective laser diodes. The output beam may include incoherent light having a non-uniform intensity distribution over a field of view of the laser array. Related devices and fabrication methods are also discussed.

A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.

A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.