A continuous lighting lamp irradiates a semiconductor wafer held by a quartz susceptor with light from below to perform preliminary heating, and then irradiation of a flash of light is performed by a flash lamp from above. A light absorption ring is provided so as to be close to a peripheral portion of the semiconductor wafer held by the susceptor. The light absorption ring absorbs infrared light and transmits visible light through itself. During preliminary heating, the light absorption ring absorbs light emitted from the continuous lighting lamp to be increased in temperature so that heat radiated from the peripheral portion of the wafer is compensated to cause in-plane temperature distribution of the semiconductor wafer to be uniform. Meanwhile, the flash of light is transmitted through the light absorption ring, so that the light absorption ring is prevented from being damaged by the irradiation of the flash of light.

A graphitization furnace has a furnace structure including a support part within a furnace chamber, and a gate valve. The gate valve in an open state thereof after a graphitization process dumps a pack material within the furnace chamber in a state in which carbon bodies are located within the furnace chamber, and the support part catches the carbon bodies as a level of the carbon bodies lowers with a decrease in an amount of the pack material remaining within the furnace chamber.

A graphitization furnace has a furnace structure including a support part within a furnace chamber, and a gate valve. The gate valve in an open state thereof after a graphitization process dumps a pack material within the furnace chamber in a state in which carbon bodies are located within the furnace chamber, and the support part catches the carbon bodies as a level of the carbon bodies lowers with a decrease in an amount of the pack material remaining within the furnace chamber.

An apparatus is provided, by way of example, a heater for use in semiconductor processing equipment, that includes a base functional layer having at least one functional zone. A substrate is secured to the base functional layer, and a tuning layer is secured to the substrate opposite the base functional layer. The tuning layer includes a plurality of zones that is greater in number than the zones of the base functional layer, and the tuning layer has lower power than the base functional layer. Further, a component, such as a chuck by way of example, is secured to the tuning layer opposite the substrate. The substrate defines a thermal conductivity to dissipate a requisite amount of power from the base functional layer.

A support pedestal includes a substrate, a plurality of resistive heating elements disposed on the substrate and defining a plurality of heating zones, and electric terminals disposed at a central region of the substrate. At least one of the electric terminals is connected to at least two of the plurality of resistive heating elements.

The invention concerns a dental furnace, with a furnace base and with a furnace hood, wherein the furnace hood includes a firing chamber for the accommodation of dental restorations, with a temperature sensor that records the temperature of the dental restoration and which is connected to a control device which controls the dental furnace, and the dental furnace (10) includes a drive unit (18) for the furnace hood (16) and the control device (30) controls the drive unit (18) based on the temperature recorded by the temperature sensor (20), namely opens the furnace hood.

A vacuum double structure includes: a tubular and metal inner wall member; a tubular and metal outer wall member in which the inner wall member is accommodated; and a sealing member provided between a facing surface of the inner wall member and a facing surface of the outer wall member. The sealing member includes an annular spacer, a first annular packing material, and a second annular packing material. The annular spacer is provided between the facing surface of the inner wall member and the facing surface of the outer wall member.

Embodiments described herein relate to a thermal chamber utilized in the processing of display substrates. The thermal chamber may be part of a larger processing system configured to manufacture OLED devices. The thermal chamber may be configured to heat and cool masks and/or substrates utilized in deposition processes in the processing system. The thermal chamber may include a chamber body defining a volume sized to receive one or more cassettes containing a plurality of masks and/or substrates. Heaters coupled to the chamber body within the volume may be configured to controllably heat masks and/or substrates prior to deposition processes and cool the masks and/or substrates after deposition processes.

A carburizing device is configured to perform a carburizing treatment on a treatment target, and includes a furnace body, an insulating container provided inside the furnace body, a furnace bed provided inside the insulating container and on which the treatment target is mounted, and a heat source provided inside the insulating container, in which at least surfaces of main components of the furnace bed, the heat source and the insulating container are made of a ceramic material.

A carburizing device is configured to perform a carburizing treatment on a treatment target, and includes a furnace body, an insulating container provided inside the furnace body, a furnace bed provided inside the insulating container and on which the treatment target is mounted, and a heat source provided inside the insulating container, in which at least surfaces of main components of the furnace bed, the heat source and the insulating container are made of a ceramic material.