A method of heating a steel sheet and a continuous annealing facility therefor wherein the temperature of the steel sheet in the longitudinal direction and sheet width direction is uniformized and overheating of the steel sheet exceeding the soaking temperature as the target heating temperature is prevented. T is a value of not less than a variation range of the steel sheet temperature when the sheet temperature is controlled by feedback control in the heating furnace but not more than of a heating capacity of the steel sheet in the semi-soaking furnace.

A process chamber for carrying out thermal processes in the manufacture of an electronic assembly with at least one opening for moving in and/or removing the electronic assembly; a supply of a protective gas; a controllable protection device arranged at the opening to reduce escape of the protective gas from the process chamber; and a control that can control the protection device such that, when the electronic assembly passes through the opening, an opening cross section of the opening is provided, which corresponds to the cross section of the electronic assembly.

An operation support apparatus for a heat-treatment furnace for heat-treating a metal plate continuously includes a required time calculation unit configured to calculate, based on a current furnace temperature which is a current temperature of the heat-treatment furnace, a current line speed which is a current conveyance speed of the metal plate, and a target line speed which is a conveyance speed of the metal plate to be changed from the current line speed, an estimated required time until a temperature of the heat-treatment furnace reaches, from the current furnace temperature, a target furnace temperature which is a temperature of the heat-treatment furnace corresponding to the target line speed, and a first output unit configured to output the estimated required time calculated by the required time calculation unit.

An operation support apparatus for a heat-treatment furnace for heat-treating a metal plate continuously includes a required time calculation unit configured to calculate, based on a current furnace temperature which is a current temperature of the heat-treatment furnace, a current line speed which is a current conveyance speed of the metal plate, and a target line speed which is a conveyance speed of the metal plate to be changed from the current line speed, an estimated required time until a temperature of the heat-treatment furnace reaches, from the current furnace temperature, a target furnace temperature which is a temperature of the heat-treatment furnace corresponding to the target line speed, and a first output unit configured to output the estimated required time calculated by the required time calculation unit.

According to an example, in a method for producing a photovoltaic element with stabilised efficiency, a silicon substrate may be provided with an emitter layer and electrical contacts, which may be subjected to a stabilisation treatment step. Hydrogen from a hydrogenated silicon nitride layer may be introduced into the silicon substrate, for example, within a zone of maximum temperature. The silicon substrate may then be cooled rapidly in a zone in order to avoid hydrogen effusion. The silicon substrate may then be maintained, for example in a zone within a temperature range of from 230 C. to 450 C. for a period of, for example, at least 10 seconds. The previously introduced hydrogen may thereby assume an advantageous bond state. At the same time or subsequently, a regeneration may be carried out by generating excess minority charge carriers in the substrate at a temperature of at least 90 C., preferably at least 230 C.

According to an example, in a method for producing a photovoltaic element with stabilised efficiency, a silicon substrate may be provided with an emitter layer and electrical contacts, which may be subjected to a stabilisation treatment step. Hydrogen from a hydrogenated silicon nitride layer may be introduced into the silicon substrate, for example, within a zone of maximum temperature. The silicon substrate may then be cooled rapidly in a zone in order to avoid hydrogen effusion. The silicon substrate may then be maintained, for example in a zone within a temperature range of from 230 C. to 450 C. for a period of, for example, at least 10 seconds. The previously introduced hydrogen may thereby assume an advantageous bond state. At the same time or subsequently, a regeneration may be carried out by generating excess minority charge carriers in the substrate at a temperature of at least 90 C., preferably at least 230 C.

An apparatus useful in treating a carbon fibre precursor material under predetermined conditions of temperature and gaseous environment. The apparatus includes a housing, and a reaction chamber disposed within the housing. The reaction chamber is elongate and has an entry port at a first end and an exit port at a second end. The entry and exit ports are configured to allow passage of a carbon fibre precursor material into and out of the reaction chamber respectively. A heater or heating system is configured to heat a wall of the reaction chamber. In use, a precursor material is passed through the reaction chamber and is thereby heated.

An apparatus useful in treating a carbon fibre precursor material under predetermined conditions of temperature and gaseous environment. The apparatus includes a housing, and a reaction chamber disposed within the housing. The reaction chamber is elongate and has an entry port at a first end and an exit port at a second end. The entry and exit ports are configured to allow passage of a carbon fibre precursor material into and out of the reaction chamber respectively. A heater or heating system is configured to heat a wall of the reaction chamber. In use, a precursor material is passed through the reaction chamber and is thereby heated.

A method of operating an oven to cook a food product that includes changing a heat setting of a heating element of the oven, selecting a cook time for the food product in the oven, driving a heating element of the oven at a heat power input based on the heat setting, predicting a cooking ability of the oven by calculating an estimated temperature in the oven using a formula that is a function of a heat power input during a previous time period, and modifying the cook time to a modified cook time based on the estimated temperature that was calculated using the formula.

A method of operating an oven to cook a food product that includes changing a heat setting of a heating element of the oven, selecting a cook time for the food product in the oven, driving a heating element of the oven at a heat power input based on the heat setting, predicting a cooking ability of the oven by calculating an estimated temperature in the oven using a formula that is a function of a heat power input during a previous time period, and modifying the cook time to a modified cook time based on the estimated temperature that was calculated using the formula.