One or more embodiments relates to a method of casting a creep-resistant Ni-based superalloy and a homogenization heat treatment for the alloy, The method includes forming a feed stock having Nickel (Ni) and at least one of Chromium (Cr), Cobalt (Co), Aluminum (Al), Titanium (Ti), Niobium (Nb), Iron (Fe), Carbon (C), Manganese (Mn), Molybdenum (Mo), Silicon (Si), Copper (Cu), Phosphorus (P), Sulfur (S) and Boron (B). The method further includes fabricating the creep-resistant Ni-based superalloy in a predetermined shape using the feed stock and at least one process such as vacuum induction melting (VIM), electroslag remelting (ESR) and/or vacuum arc remelting (VAR).

One or more embodiments relates to a method of casting a creep-resistant Ni-based superalloy and a homogenization heat treatment for the alloy, The method includes forming a feed stock having Nickel (Ni) and at least one of Chromium (Cr), Cobalt (Co), Aluminum (Al), Titanium (Ti), Niobium (Nb), Iron (Fe), Carbon (C), Manganese (Mn), Molybdenum (Mo), Silicon (Si), Copper (Cu), Phosphorus (P), Sulfur (S) and Boron (B). The method further includes fabricating the creep-resistant Ni-based superalloy in a predetermined shape using the feed stock and at least one process such as vacuum induction melting (VIM), electroslag remelting (ESR) and/or vacuum arc remelting (VAR).

One or more embodiments relates to a method of casting a creep-resistant Ni-based superalloy and a homogenization heat treatment for the alloy. The method includes forming a feed stock having Nickel (Ni) and at least one of Chromium (Cr), Cobalt (Co), Aluminum (Al), Titanium (Ti), Niobium (Nb), Iron (Fe), Carbon (C), Manganese (Mn), Molybdenum (Mo), Silicon (Si), Copper (Cu), Phosphorus (P), Sulfur (S) and Boron (B). The method further includes fabricating the creep-resistant Ni-based superalloy in a predetermined shape using the feed stock and at least one process such as vacuum induction melting (VIM), electroslag remelting (ESR) and/or vacuum arc remelting (VAR).

One or more embodiments relates to a method of casting a creep-resistant Ni-based superalloy and a homogenization heat treatment for the alloy. The method includes forming a feed stock having Nickel (Ni) and at least one of Chromium (Cr), Cobalt (Co), Aluminum (Al), Titanium (Ti), Niobium (Nb), Iron (Fe), Carbon (C), Manganese (Mn), Molybdenum (Mo), Silicon (Si), Copper (Cu), Phosphorus (P), Sulfur (S) and Boron (B). The method further includes fabricating the creep-resistant Ni-based superalloy in a predetermined shape using the feed stock and at least one process such as vacuum induction melting (VIM), electroslag remelting (ESR) and/or vacuum arc remelting (VAR).

The invention relates to a molded article made of a metallic molybdenum-based alloy with at least 3 wt. % up to a maximum of 8 wt. % aluminum, at least 3 wt. % up to a maximum of 6 wt. % titanium and, as the remainder, molybdenum including the usual impurities, wherein the molded article is produced directly or indirectly by means of solidification from a melt. The invention also relates to a method for producing a molded article and to the use of such a molded article.

A quartz glass crucible 1 having a cylindrical side wall portion 10a, a bottom portion 10b, and a corner portion 10c includes a transparent layer 11 as an innermost layer made of quartz glass, a semi-molten layer 13 as an outermost layer made of raw material silica powder solidified in a semi-molten state, and a bubble layer 12 made of quartz glass interposed therebetween. An infrared transmissivity of the corner portion 10c in a state where the semi-molten layer 13 is removed is 25 to 51%, the infrared transmissivity of the corner portion 10c in the state where the semi-molten layer 13 is removed is lower than an infrared transmissivity of the side wall portion 10a, and the infrared transmissivity of the side wall portion 10a in the state where the semi-molten layer 13 is removed is lower than an infrared transmissivity of the bottom portion 10b.

A quartz glass crucible 1 having a cylindrical side wall portion 10a, a bottom portion 10b, and a corner portion 10c includes a transparent layer 11 as an innermost layer made of quartz glass, a semi-molten layer 13 as an outermost layer made of raw material silica powder solidified in a semi-molten state, and a bubble layer 12 made of quartz glass interposed therebetween. An infrared transmissivity of the corner portion 10c in a state where the semi-molten layer 13 is removed is 25 to 51%, the infrared transmissivity of the corner portion 10c in the state where the semi-molten layer 13 is removed is lower than an infrared transmissivity of the side wall portion 10a, and the infrared transmissivity of the side wall portion 10a in the state where the semi-molten layer 13 is removed is lower than an infrared transmissivity of the bottom portion 10b.

The application basically comprises supplying a high-temperature ultra-high vacuum furnace, the sole chamber of which is metal, in which an electrically conductive crucible, preferably made of tantalum, is placed onto an insulating support, preferably a ceramic, and is induction heated by a winding wound around the crucible. The insulating tube, preferably made of quartz, that is arranged between the induction winding and the crucible, advantageously acts as a surface on which the condensable species can condense. The quartz insulating tube especially allows the induction winding to be protected.

The application basically comprises supplying a high-temperature ultra-high vacuum furnace, the sole chamber of which is metal, in which an electrically conductive crucible, preferably made of tantalum, is placed onto an insulating support, preferably a ceramic, and is induction heated by a winding wound around the crucible. The insulating tube, preferably made of quartz, that is arranged between the induction winding and the crucible, advantageously acts as a surface on which the condensable species can condense. The quartz insulating tube especially allows the induction winding to be protected.

The present invention relates to a pharmaceutical formulation for vaginal administration, wherein the formulation comprises a pharmaceutical acceptable excipient and glucono δ-lactone, wherein the glucono δ-lactone is present in an amount of 5 to 99 wt % of the formulation. The invention also relates to a pharmaceutical formulation according to the invention for use in the prevention or treatment of a urogenital fungal infection. Furthermore, the invention relates to glucono δ-lactone (formula (III)), for use in the in the prevention or treatment of a fungal infection.