Patent classifications
F27D2099/0028
Microwave irradiating and heating device
A microwave irradiating and heating device including: a reaction furnace containing a sample material to be irradiated with a microwave passed through an opening and to be heated; a microwave irradiating source disposed outside the reaction furnace; a rotated quadric surface mirror reflecting microwave emitted from the microwave irradiating source toward the opening, and disposed above the reaction furnace; a lid for the opening, at least a portion of the lid made from dielectric to transmit microwave reflected on the rotated quadric surface mirror into the reaction furnace; wherein an angle of incidence of the microwave, reflected on the rotated quadric surface mirror and irradiated at the portion of the lid made from the dielectric, is at an angle causing a polarized wave of the microwave to pass through the portion.
Microwave Furnace For Thermal Processing
A furnace system includes a heating chamber, a retort assembly, and a waveguide. The heating chamber includes a shell encompassing an insulation layer and a working volume, where the working volume is configured to receive at least one part for heat treatment. The retort assembly is supported within the insulation layer and includes an inner retort surface facing the working volume. The inner retort surface is formed of at least one carbon compound reflective of microwave radiation, and the retort assembly defines a retort aperture. The waveguide is configured to direct microwave radiation from a microwave source to the retort aperture.
Sintering apparatus
A sintering apparatus is provided. The sintering apparatus includes a case having an internal space formed therein and including a door provided in a front portion thereof to open and close the internal space, a magnetron coupled to the case and oscillating microwaves toward the internal space, a heat insulating unit disposed in the internal space to form a chamber space and blocking transmission of heat of the chamber space to the internal space, a susceptor unit disposed in the chamber space and having a sintering space in which a to-be-sintered material is accommodated, and a cooling unit cooling at least one of the case or the chamber space.
Fabrication of ceramics from celestial materials using microwave sintering and mechanical compression
Systems and methods for fabrication of ceramics from celestial materials using microwave sintering and mechanical compression for space mining applications are disclosed. In one aspect, a chamber for sintering loose mineral material into solid ceramic shapes includes a plurality of zirconia insulting plates configured to clamp the mineral material and forming a cavity in which the mineral loose material is contained, and at least one dipole array configured to generate microwave energy and apply the microwave energy to the mineral material.
MICROWAVE IRRADIATING AND HEATING DEVICE
A microwave irradiating and heating device including: a reaction furnace containing a sample material to be irradiated with a microwave passed through an opening and to be heated; a microwave irradiating source disposed outside the reaction furnace; a rotated quadric surface mirror reflecting microwave emitted from the microwave irradiating source toward the opening, and disposed above the reaction furnace; a lid for the opening, at least a portion of the lid made from dielectric to transmit microwave reflected on the rotated quadric surface mirror into the reaction furnace; wherein an angle of incidence of the microwave, reflected on the rotated quadric surface mirror and irradiated at the portion of the lid made from the dielectric, is at an angle causing a polarized wave of the microwave to pass through the portion.
Superimposed zones process heating
Embodiments of the present invention include a heating method and apparatus in which a plurality of heated regions is superimposed in order to improve energy density control.
Microwave T-junction applicator
A T-junction microwave applicator and a method for making a T-junction microwave applicator with a microwave source supplying electromagnetic energy through a junction arm to a pair of collinear arms extending in opposite directions from their junction with the junction arm. The two collinear arms form a main waveguide terminated in end walls in which entrance and exit ports are formed for a conveyor to convey material to be heated through the main waveguide for exposure to electromagnetic energy. A rectangular conductive ridge in the wall of the main waveguide opposite the junction arm extends the length of the applicator. A cylindrical tuning bar spanning the junction is positioned vertically in a plane perpendicular to the axis of the main waveguide to maximize power transfer to the material to be heated.
METHOD FOR PRODUCING SILICON USING MICROWAVE, AND MICROWAVE REDUCTION FURNACE
A microwave reduction furnace including a reaction furnace provided with a refractory chamber of silica or silicon carbide for storing a material therein, a supply section for supplying the material into the refractory chamber, the material being a mixture of a silica powder and a graphite powder or a mixture of a silica powder, a silicon carbide powder and a graphite powder, a discharge section for discharging molten silicon, obtained through reduction, out of the chamber, and a microwave oscillator for outputting microwave toward the refractory chamber in the reaction furnace with a degree of directionality by virtue of a helical antenna or a waveguide.
Apparatus and methods for sintering
Disclosed is an apparatus and methods for sintering particulate to make a workpiece.
Method for producing silicon using microwave, and microwave reduction furnace
A method for producing silicon using microwave and a microwave reduction furnace for use therewith are disclosed, with which it is possible to quickly reduce silica to quickly produce silicon. A material of a mixture of a silica powder and a graphite powder of a mixture of a silica powder, a silicon carbide powder and a graphite powder is set in a refractory chamber. Then, the material set in the chamber is irradiated with microwave. The graphite powder absorbs a microwave energy to increase the temperature, after which silica and graphite react with each other to further increase the temperature while producing silicon carbide, and the heated silica and silicon carbide react with each other. SiO produced through this reaction and silicon carbide are allowed to react with each other, thereby producing high-purity silicon.