A control circuit for a semiconductor switching element includes a control terminal, a main electrode terminal, and a current sensing terminal, and controls the semiconductor switching element including a diode connected to the main electrode terminal or the current sensing terminal. The control circuit includes an overheat detection circuit, a current detection circuit, and an interruption circuit. The overheat detection circuit outputs an overheat detection signal when a temperature detected based on an output of the diode is equal to or higher than a predetermined set temperature. The current detection circuit outputs a current detection signal when an output value of the current sensing terminal is equal to or greater than a predetermined set current value. The interruption circuit turns off the semiconductor switching element when both the overheat detection signal from the overheat detection circuit and the current detection signal from the current detection circuit are input.

A semiconductor apparatus is provided, including a power semiconductor element, a cutoff condition detection portion which detects whether a predetermined cutoff condition is met, a reset portion which outputs a reset signal that instructs to reset during a predetermined period in response to an input of the control signal turning the power semiconductor element on, a latch portion which is reset in response to the reset signal and latches that an occurrence of the cutoff condition is detected after the reset, a cutoff circuit which controls the gate of the power semiconductor element to be at an OFF potential in response to the latching of the occurrence of the cutoff condition by the latch portion, and a prevention circuit which prevents the gate of the power semiconductor element from being at an ON potential during a period of reset of the latch portion even if the cutoff condition is met.

A semiconductor apparatus is provided, comprising a power semiconductor element which is connected between a first terminal on a high-potential side and a second terminal on a low-potential side and is controlled to be turned on or off according to a gate potential, a cut-off condition detection section which detects whether or not a control signal that is input from a control terminal and controls the power semiconductor element satisfies a predetermined cut-off condition, and a cut-off circuit which controls the gate potential of the power semiconductor element to be an OFF potential in response to the cut-off condition detection section detecting that the cut-off condition is satisfied, and the cut-off condition detection section has an input terminal connected to the first terminal and the control terminal, and uses an electrical signal input from the input terminal as a power source.

The specification relates to a composite particle for storing lithium. The composite particle is used in an electrochemical cell. The composite particle includes a metal oxide on the surface of the composite particle, a major dimension that is approximately less than or equal to 40 microns and a formula of MMZ, wherein M is from the group of Si and Sn, M is from a group of Mn, Mg, Al, Mo, Bronze, Be, Ti, Cu, Ce, Li, Fe, Ni, Zn, Co, Zr, K, and Na, and Z is from the group of O, Cl, P, C, S, H, and F.

A one-chip igniter is formed by a convenient manufacturing process and at a low cost. A device to switch a power semiconductor switch is provided, the device comprising a first semiconductor switch which is turned on or turned off in response to a first control signal input to a gate and, if turned on, provides a high voltage to a gate of the power semiconductor switch, and a voltage boosting circuit which boosts a voltage of the first control signal that turns the first semiconductor switch on. As one example, the voltage boosting circuit boosts a voltage of the first control signal which turns the first semiconductor switch on to a higher voltage than a high voltage.

A drive circuit that operates stably and has a small circuit size. Provided is a switch apparatus including a power semiconductor element connected between a first terminal on a high potential side and a second terminal on a low potential side; a capacitor; a charging section that charges the capacitor for at least a portion of an interval during which the power semiconductor element is OFF; a discharging section that causes the capacitor to gradually discharge, in response to the power semiconductor element becoming ON; and a cutoff section that sets the power semiconductor element to an OFF state, in response to a voltage of the capacitor becoming lower than a threshold voltage.

A system and method for mitigating the possibility of missing ignition coil commands is presented. In one example, one or more ignition coils may not be charged and/or discharged during a cylinder cycle in response to the absence of a voltage pulse forming at least a portion of an ignition coil command.

A one-chip igniter is formed by a convenient manufacturing process and at a low cost. A device to switch a power semiconductor switch is provided, the device comprising a first semiconductor switch which is turned on or turned off in response to a first control signal input to a gate and, if turned on, provides a high voltage to a gate of the power semiconductor switch, and a voltage boosting circuit which boosts a voltage of the first control signal that turns the first semiconductor switch on.

As one example, the voltage boosting circuit boosts a voltage of the first control signal which turns the first semiconductor switch on to a higher voltage than a high voltage.

In a general aspect, an apparatus can include an insulated gate bipolar transistor (IGBT) device configured to control charging and discharging of an ignition coil and a two-stage voltage clamp coupled with the IGBT device. The two-stage voltage clamp can include a high-voltage portion coupled with the IGBT device and a low-voltage portion coupled with high-voltage portion and the IGBT device. The apparatus can further include a sense device coupled with the two-stage voltage clamp and a timing circuit coupled with the sense device. The timing circuit can be configured to provide a control signal to cause the sense device to enable or disable the high-voltage portion of the two-stage voltage clamp.

A system and method for mitigating the possibility of missing ignition coil commands is presented. In one example, one or more ignition coils may not be charged and/or discharged during a cylinder cycle in response to the absence of a voltage pulse forming at least a portion of an ignition coil command.