The present invention relates to a stress-strain testing system for a large-diameter steel pipe pile of an offshore wind turbine and a construction method, comprising a steel pipe pile, wherein copper belt type sensor cables are correspondingly welded on both sides of the steel pipe pile along an axis direction; each sensor cable is sequentially covered with an epoxy adhesive, gold foil paper and an angle steel welded on the steel pipe pile centering on the copper belt type sensor cable; a fiber core of each copper belt type sensor cable is transferred into a high-strength armored optical cable by a special fixture and then is led out; and the high-strength armored optical cable is connected with a Brillouin optical fiber demodulator. The present invention is applicable to the field of foundation engineering testing and detection technology.

An apparatus for determining torque on bit and bending forces in a drilling assembly. The apparatus includes a body having an inner bore defined by an inner wall and having an outer wall, the body also including first and second light bores disposed between the inner wall and the outer wall and a light emitting assembly arranged and configured to cause a light beam to enter the first and second light bores. The assembly further includes first and second light sensors disposed in or at an end of the first and second light bores, respectively, that measure a location where light that enters the first and second light bores contacts the sensors

An apparatus for determining torque on bit and bending forces in a drilling assembly. The apparatus includes a body having an inner bore defined by an inner wall and having an outer wall, the body also including first and second light bores disposed between the inner wall and the outer wall and a light emitting assembly arranged and configured to cause a light beam to enter the first and second light bores. The assembly further includes first and second light sensors disposed in or at an end of the first and second light bores, respectively, that measure a location where light that enters the first and second light bores contacts the sensors

An optical measurement system comprising a vessel for non-invasively testing a sample material composition in-situ and in real time. The test chamber is configured to hold a sample material composition for a wellbore. The optical measurement system is configured to provide in-situ monitoring of the sample material composition in real time and at high temperature and high pressure. Dimensional and geometrical changes occurring within the sample material composition are monitored using the optical measurement system. The system further performs goniometry on a sample.

An optical measurement system comprising a vessel for non-invasively testing a sample material composition in-situ and in real time. The test chamber is configured to hold a sample material composition for a wellbore. The optical measurement system is configured to provide in-situ monitoring of the sample material composition in real time and at high temperature and high pressure. Dimensional and geometrical changes occurring within the sample material composition are monitored using the optical measurement system. The system further performs goniometry on a sample.

Techniques are described for dynamically correcting image distortion during imaging of a patterned sample having repeating spots. Different sets of image distortion correction coefficients may be calculated for different regions of a sample during a first imaging cycle of a multicycle imaging run and subsequently applied in real time to image data generated during subsequent cycles. In one implementation, image distortion correction coefficients may be calculated for an image of a patterned sample having repeated spots by: estimating an affine transform of the image; sharpening the image; and iteratively searching for an optimal set of distortion correction coefficients for the sharpened image, where iteratively searching for the optimal set of distortion correction coefficients for the sharpened image includes calculating a mean chastity for spot locations in the image, and where the estimated affine transform is applied during each iteration of the search.

Techniques are described for dynamically correcting image distortion during imaging of a patterned sample having repeating spots. Different sets of image distortion correction coefficients may be calculated for different regions of a sample during a first imaging cycle of a multicycle imaging run and subsequently applied in real time to image data generated during subsequent cycles. In one implementation, image distortion correction coefficients may be calculated for an image of a patterned sample having repeated spots by: estimating an affine transform of the image; sharpening the image; and iteratively searching for an optimal set of distortion correction coefficients for the sharpened image, where iteratively searching for the optimal set of distortion correction coefficients for the sharpened image includes calculating a mean chastity for spot locations in the image, and where the estimated affine transform is applied during each iteration of the search.

A semiconductor structure and a method for managing semiconductor wafer stress are disclosed. The semiconductor structure includes a semiconductor wafer, a first stress layer disposed on and in contact with a backside of the semiconductor wafer, and a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second layer exerts a second stress on the semiconductor wafer that is opposite the first backside stress. The method includes forming a first stress layer on and in contact with a backside of a semiconductor wafer, and further forming a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second stress layer exerts a second stress on the semiconductor wafer that is opposite to the first stress.

A semiconductor structure and a method for managing semiconductor wafer stress are disclosed. The semiconductor structure includes a semiconductor wafer, a first stress layer disposed on and in contact with a backside of the semiconductor wafer, and a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second layer exerts a second stress on the semiconductor wafer that is opposite the first backside stress. The method includes forming a first stress layer on and in contact with a backside of a semiconductor wafer, and further forming a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second stress layer exerts a second stress on the semiconductor wafer that is opposite to the first stress.

Deformable sensors and methods for modifying membrane stiffness are provided. A deformable sensor may include a membrane coupled to a housing to form a sensor cavity. The deformable sensor may further include a rotational element having an adjustable vertical position and a modifiable rotation. The rotational element may be supported at a base of the sensor cavity. The rotational element may be configured to establish and withdraw contact with respect to the membrane to modify stiffness of the membrane. The rotational element may further be configured to modify stiffness of the membrane by withdrawing the rotational element from the membrane.