A method of determining dimensional information of a target surface includes generating a first point cloud corresponding to a first plurality of reconstructed surface points of the target surface generated by a first imaging system-illumination source pair of a phase profilometry system; generating a second point cloud corresponding to a second plurality of reconstructed surface points of the target surface generated by a second imaging system-illumination source pair of the phase profilometry system; generating an initial estimate of the target surface based on the first and second point clouds; and refining the initial surface estimate using positions of the first and second point clouds and geometry of the first and second imaging system-illumination source pairs to generate a final point cloud.

A method of determining dimensional information of a target surface includes generating a first point cloud corresponding to a first plurality of reconstructed surface points of the target surface generated by a first imaging system-illumination source pair of a phase profilometry system; generating a second point cloud corresponding to a second plurality of reconstructed surface points of the target surface generated by a second imaging system-illumination source pair of the phase profilometry system; generating an initial estimate of the target surface based on the first and second point clouds; and refining the initial surface estimate using positions of the first and second point clouds and geometry of the first and second imaging system-illumination source pairs to generate a final point cloud.

There is provided a method for manufacturing a semiconductor structure, including: preparing a plate-like semiconductor structure; and inspecting the semiconductor structure, the inspection of the semiconductor further including: performing a measurement of irradiating a surface of the semiconductor structure with a light from a light source in an oblique direction to the surface, and detecting a reflected light reflected or scattered by the surface by a two-dimensional detector, at a plurality of locations within at least a predetermined range of the surface of the semiconductor structure, to acquire a reflected light distribution that is a distribution of an integrated value obtained by integrating intensity of the reflected light measured at the plurality of locations, with respect to a position at the detector; and fitting the reflected light distribution by a multiple Gaussian function obtained by adding at least a first Gaussian function and a second Gaussian function distributed more widely than the first Gaussian function, to acquire a parameter of the second Gaussian function as an index corresponding to a surface roughness of the semiconductor structure.

There is provided a method for manufacturing a semiconductor structure, including: preparing a plate-like semiconductor structure; and inspecting the semiconductor structure, the inspection of the semiconductor further including: performing a measurement of irradiating a surface of the semiconductor structure with a light from a light source in an oblique direction to the surface, and detecting a reflected light reflected or scattered by the surface by a two-dimensional detector, at a plurality of locations within at least a predetermined range of the surface of the semiconductor structure, to acquire a reflected light distribution that is a distribution of an integrated value obtained by integrating intensity of the reflected light measured at the plurality of locations, with respect to a position at the detector; and fitting the reflected light distribution by a multiple Gaussian function obtained by adding at least a first Gaussian function and a second Gaussian function distributed more widely than the first Gaussian function, to acquire a parameter of the second Gaussian function as an index corresponding to a surface roughness of the semiconductor structure.

Embodiments of megasonic cleaning chambers are provided herein. In some embodiments, a megasonic cleaning chamber includes: a chamber body defining an interior volume therein; a substrate support to support a substrate disposed in the interior volume; a supply tube comprising a transparent material configured to direct a cleaning fluid to the substrate support; a megasonic power generator coupled to the supply tube to provide megasonic power to the cleaning fluid; a megasonic transducer coupled to the megasonic power generator and the supply tube to create megasonic waves in the cleaning fluid and to form cavities in the cleaning fluid, wherein the megasonic transducer is configured to direct the megasonic waves and cavities toward the substrate support; and one or more sensors configured to generate a signal indicative of a property of the cavities in the cleaning fluid.

An apparatus for measuring a surface topography of a patient's teeth may include an optical probe, a light source configured to generate incident light, and focusing optics configured to focus one or more wavelengths of the incident light to a fixed focal position external to the optical probe, wherein the fixed focal position is fixed relative to the optical probe. The apparatus may further include a light sensor configured to measure a characteristic of returned light generated by illuminating the patient's teeth with the incident light and a processing unit operable to determine the surface topography of the patient's teeth based on the measured characteristic of the returned light.

[Problem] When the inclination of an object surface reaches or exceeds a certain level, direct light consisting of a specularly reflected light component leaves the range of the solid observation angle formed by the observation optical system, and it becomes difficult to continuously and quantitatively obtain the surface shape of the object surface. [Solution] This invention emits emission light capable of, within an observation range for an object under inspection, simultaneously forming the same solid emission angle on each point on an object surface regardless of the distance from the illumination; for a non-continuous area where direct light is not returned, uses variation in the solid angle of direct light unique to the vicinity of the non-continuous area to make it possible to at least measure height-direction variation of the non-continuous area; and uses brightness information indicating variation in a scattered light component of object light from the non-continuous area to make it possible to continuously acquire the three-dimensional shape of the non-continuous area.

A low-coherence Fizeau interferometer includes a first beamsplitter, a test arm and a reference arm, the first beamsplitter splits light into a first portion of light directed to the test arm and a second portion of light directed to the reference arm, and an imaging arm comprising a first collimating lens, a flat reference surface, and a test element. The test arm focuses the first portion of light at a first focal point, such that a virtual image of the first focal point appears at a focal point of the test element. The reference arm focuses the second portion of light at a second focal point, the first collimating lens collimates the light that then reflects off the flat reference surface. The second beamsplitter directs the first portion of light to reflect off the test element. The reflection of the first and second portion of light form an interference pattern.

A low-coherence Fizeau interferometer includes a first beamsplitter, a test arm and a reference arm, the first beamsplitter splits light into a first portion of light directed to the test arm and a second portion of light directed to the reference arm, and an imaging arm comprising a first collimating lens, a flat reference surface, and a test element. The test arm focuses the first portion of light at a first focal point, such that a virtual image of the first focal point appears at a focal point of the test element. The reference arm focuses the second portion of light at a second focal point, the first collimating lens collimates the light that then reflects off the flat reference surface. The second beamsplitter directs the first portion of light to reflect off the test element. The reflection of the first and second portion of light form an interference pattern.

A waveguide apparatus includes a planar waveguide and at least one optical diffraction element (DOE) that provides a plurality of optical paths between an exterior and interior of the planar waveguide. A phase profile of the DOE may combine a linear diffraction grating with a circular lens, to shape a wave front and produce beams with desired focus. Waveguide apparati may be assembled to create multiple focal planes. The DOE may have a low diffraction efficiency, and planar waveguides may be transparent when viewed normally, allowing passage of light from an ambient environment (e.g., real world) useful in AR systems. Light may be returned for temporally sequentially passes through the planar waveguide. The DOE(s) may be fixed or may have dynamically adjustable characteristics. An optical coupler system may couple images to the waveguide apparatus from a projector, for instance a biaxially scanning cantilevered optical fiber tip.