A material analysis method is provided. A plurality of wafers processed from a plurality of ingots are measured by a measuring instrument to obtain an average of a bow of each of the wafers processed from the ingots and a plurality of full widths at half maximum (FWHM) of each of the wafers. Key factors respectively corresponding to the ingots are calculated according to the FWHM of the wafers. A regression equation is obtained according to the key factors and the average of the bows.

A measurement method comprises acquiring, using image sensors (Cji) for each object during its displacement, at least three radiographic images of the region to be inspected. The images are obtained from at least three radiographic projections of the region to be inspected, the directions of projection (Dji) of which are different from each other. A computer system is provided with an a priori geometric model of the region to be inspected for the series of objects. Using the computer system and considering a constant attenuation coefficient and, from the a priori geometric model, at least three radiographic images of the region to be inspected, a digital geometric model of the region to be inspected is determined. For each object of the series, from the digital geometric model of the region to be inspected, at least one linear dimension measurement of the region to be inspected is determined.

A measurement method comprises acquiring, using image sensors (Cji) for each object during its displacement, at least three radiographic images of the region to be inspected. The images are obtained from at least three radiographic projections of the region to be inspected, the directions of projection (Dji) of which are different from each other. A computer system is provided with an a priori geometric model of the region to be inspected for the series of objects. Using the computer system and considering a constant attenuation coefficient and, from the a priori geometric model, at least three radiographic images of the region to be inspected, a digital geometric model of the region to be inspected is determined. For each object of the series, from the digital geometric model of the region to be inspected, at least one linear dimension measurement of the region to be inspected is determined.

An additive manufacturing system includes an additive manufacturing unit configured to shape an object including a plurality of layers, a measurement unit configured to measure a state of each of the plurality of layers, and a control unit. The control unit includes a storage unit configured to store reference information based on internal defect information indicating a defect existing inside a sample object shaped by the additive manufacturing unit and including the plurality of layers, based on an electromagnetic wave which has passed through the sample object, and sample measurement information indicating a measurement result of the plurality of layers of the sample object measured by the measurement unit, and an estimation unit configured to estimate whether a defect occurs inside the object, based on measurement information indicating a measurement result of the plurality of layers of the object measured by the measurement unit and the reference information.

A measuring device for a tube is disclosed. The measuring device includes a drift tool configured to verify roundness of the tube, a first electromagnetic (EM) emitter disposed on the drift tool and configured to emit EM waves while the drift tool drifts inside the tube, and an EM receiver disposed on the drift tool and configured to receive the EM waves reflected from an internal surface of the tube, wherein parameters of the emitted and received EM waves are analyzed to compute an internal diameter of the tube.

Provided is a system that constructs a learning database for a learning model in a short period of time. The system generates an image in which a structure image is similar to an actual image by image processing of the structure image. One or more processors acquire a first structure image and a second structure image different from the first structure image. The one or more processors create a plurality of intermediate structure images indicating an intermediate structure between the first structure image and the second structure image. The one or more processors generate an image by making each of the plurality of intermediate structure images to be similar to an actual image by image processing of each of the plurality of intermediate structure images.

A method of generating a correction line indicating a relationship between an amount of deviation of an edge of a wafer pattern from an edge of a reference pattern and a width of a space adjacent to the edge of the reference pattern, includes: creating an appearance-frequency graph of widths of spaces adjacent to reference patterns located within a designated area; obtaining images of wafer patterns corresponding to a plurality of space widths shown in the appearance-frequency graph; calculating amounts of deviation between edges of the wafer patterns on the images and edges of corresponding reference patterns; plotting a plurality of data points on a coordinate system, the plurality of data points being specified by the plurality of space widths and the amounts of deviation; and generating a correction line from the plurality of data points on the coordinate system.

A method for analyzing a semiconductor device includes repeatedly etching an entire surface of a wafer at a same etch rate by a target depth to expose a next surface of the wafer. The method includes obtaining two-dimensional structure information from each repeatedly etched surface of the wafer and serially stacking the repeatedly obtained two-dimensional structure information to generate a three-dimensional image.

A method for analyzing a semiconductor device includes repeatedly etching an entire surface of a wafer at a same etch rate by a target depth to expose a next surface of the wafer. The method includes obtaining two-dimensional structure information from each repeatedly etched surface of the wafer and serially stacking the repeatedly obtained two-dimensional structure information to generate a three-dimensional image.

A metrology system may receive design data including a layout of fabricated instances of a structure on a sample. The system may further receive detection signals from the metrology tool associated within a field of view including multiple of the fabricated instances of the structure. The system may further generate design-assisted composite data for the structure by combining detection signals from one or more common features of the structure associated with the fabricated instances of the structure within the field of view using the design data. The system may further generate one or more metrology measurements of the structure based on the design-assisted composite data.