At least one laser sensor and a controller are embedded into a substrate processing system communicating with a remote big data and machine learning server receiving/sending data from/to a fleet of substrate processing systems for autonomous process control and optimization. The laser sensor is arranged proximate to a region of the substrate processing system and is configured to capture first data from at least one of an edge coupling ring and a semiconductor substrate transported from/to the processing chamber to/from the region. The controller is configured to receive the first data from the laser sensor, process the first data to generate second data, transmit the second data to a remote server via a network, receive third data from the remote server via the network in response to sending the second data to the remote server, and operate the substrate processing system based on the third data for process optimization.

A pupil stop serves for use in an illumination optical unit of a metrology system for determining, as a result of illumination and imaging under illumination and imaging conditions corresponding to those of an optical production system, an aerial image of an object to be measured. The pupil stop has two pole passage openings for specifying a respective pole of an illumination of the illumination optical unit specified by the pupil stop. In each case at least one stop web passes through the respective pole passage opening and consequently divides the pole passage opening into a plurality of partial pole openings. This yields a pupil stop with which an accuracy of a convergence of the illumination and imaging conditions of the optical production system to the illumination and imaging conditions of the optical measurement system can be improved.

Disclosed herein is a method of measuring a pattern on a substrate comprising: preparing a substrate having a relief pattern comprising organic or inorganic material; directing an excitation light to the relief pattern on the substrate to emit a fluorescent light from the relief pattern; detecting an intensity of the fluorescent light emitted from the relief pattern; and determining a volume of the relief pattern on the substrate based on the detected intensity of the fluorescent light.

The present invention is directed to a system for measuring surface flatness, deformation and/or coefficient of thermal expansion (CTE) of a specimen comprising an image capture and analysis processing calibration means for performing image capture and analysis processing calibration of said system, a measuring means for measuring surface flatness of a specimen in a specimen holder, a heating means for heating said sample holder with a predetermined profile, and a control means for providing the predetermined heating profile onto the surface of said specimen and controlling operations of said image capture and analysis processing calibration means, said measuring means, and said heating means.

An object is to allow for simple measurement of a bump height. There is provided a device for measuring a bump height comprising: a light sensor provided with a light source and a light-receiving element and configured to irradiate a substrate including a seed layer, a resist layer formed on the seed layer and a bump formed in an opening of the resist layer, with light emitted from the light source and to detect reflected light that is reflected from the seed layer via the resist layer and reflected light that is reflected from the bump, by the light-receiving element; and a control device configured to calculate a height of the bump relative to the seed layer, based on the reflected light from the seed layer and the reflected light from the bump and to subtract an error caused by a refractive index of the resist layer from the height of the bump calculated based on the reflected lights, so as to correct the height of the bump.

A method for use in optical measurements on patterned structures, the method including performing a number of optical measurements on a structure with a measurement spot configured to provide detection of light reflected from an illuminating spot at least partially covering at least two different regions of the structure, the measurements including detecting light reflected from the at least part of the at least two different regions within the measurement spot, the detected light including interference of at least two complex electric fields reflected from the at least part of the at least two different regions, and being therefore indicative of a phase response of the structure, carrying information about properties of the structure.

The purpose of the present invention is to provide a height measurement device with which, even when the height of a sample surface varies considerably, it is possible, with a relatively simple configuration, to perform height measurement with high accuracy at various heights. In order to achieve the abovementioned purpose, proposed is an optical height measurement device characterized by being provided with: a stage for retaining a sample; a stage driving unit for adjusting the stage at different heights; a projection optical system for projecting light onto the sample; a detection optical system for receiving light reflected from the sample; and a processing unit for measuring the height of the sample on the basis of a signal outputted from the detection optical system, wherein the projection optical system is provided with a light source that emits light, and an optical path dividing element for branching the optical path of the light emitted from the light source, and the detection optical system is provided with a sensor for receiving light reflected from the sample, and an element for adjusting the light path of the light reflected from the sample in the direction of the sensor prior to reception of the light by the sensor.

Metrology targets and methods are provided, which comprise at least two overlapping structures configured to be measurable in a mutually exclusive manner at least at two different corresponding optical conditions. The targets may be single cell targets which are measured at different optical conditions which enable independent measurements of the different layers of the target. Accordingly, the targets may be designed to be very small, and be located in-die for providing accurate metrology measured of complex devices.

A semiconductor review tool receives absolute Z-height values for the semiconductor wafer, such as a semiconductor wafer with a beveled edge. The absolute Z-height values can be determined by a semiconductor inspection tool. The semiconductor review tool reviews the semiconductor wafer within a Z-height based on the absolute Z-height values. Focus can be adjusted to within the Z-height.

Analyzing a buried layer on a sample includes milling a spot on the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along a sidewall of the spot. From a first perspective a first distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. From a second perspective a second distance is measured between the first point on the sidewall corresponding to the upper surface of the buried layer and the second point on the sidewall corresponding to the lower surface of the buried layer. A thickness of the buried layer is determined using the first distance and the second distance.