The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process.

The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process.

A sensor includes a body member, a volume change body, and a detection member. The body member has a flat plate-like shape, a first end in a first direction being supported, and a storage space opening at at least one of both end faces in a thickness direction. The volume change body, whose volume changes depending on an amount of a target, is supported by the body member so that at least a part of the volume change body is stored in the storage space. The detection member is in contact with a second end in the first direction of the body member, and detects stress caused by the change in the volume of the volume change body.

A system includes a focusing system, a radiation detector, and a controller. The focusing system is configured to receive an incident radiation beam from a radiation source and focus the incident radiation beam on a portion of a component of a high temperature mechanical system. The incident radiation beam scatters from the portion of the component as a diffracted radiation beam. The focusing system is further configured to focus the diffracted radiation beam from the portion of the component on the radiation detector. The radiation detector is configured to detect a diffraction pattern of the diffracted radiation beam from the portion of the component. The controller is configured to determine a temperature of the portion of the component based on the diffraction pattern.

The present invention provides an infrared detector pixel structure and manufacturing method thereof. The bottom portion of a silicon substrate is bonded with a bonding substrate, an infrared absorbing layer in the bonding substrate is used for absorbing a part of infrared light, a closed cavity filled with infrared-sensitive gas is set in the silicon substrate, and a piezoelectric transforming unit is bonded onto the closed cavity. When the infrared-sensitive gas absorbs the infrared light to expand, the infrared sensitive gas will press the piezoelectric transforming unit, which causes piezoelectric signal generated by the piezoelectric transforming unit to be changed, thereby achieving the detection on the infrared light.

The present invention provides an infrared detector pixel structure and manufacturing method thereof. The bottom portion of a silicon substrate is bonded with a bonding substrate, an infrared absorbing layer in the bonding substrate is used for absorbing a part of infrared light, a closed cavity filled with infrared-sensitive gas is set in the silicon substrate, and a piezoelectric transforming unit is bonded onto the closed cavity. When the infrared-sensitive gas absorbs the infrared light to expand, the infrared sensitive gas will press the piezoelectric transforming unit, which causes piezoelectric signal generated by the piezoelectric transforming unit to be changed, thereby achieving the detection on the infrared light.

In accordance with heat received from a target object, a visible light absorption element 10 changes a frequency component of visible light to reflect or transmit. The visible light absorption element 10 possesses a resonance frequency included in a visible light frequency region. The visible light absorption element 10 absorbs visible light of the resonance frequency. The visible light absorption element 10 thermally deforms due to temperature change to thereby change the resonance frequency, and absorbs visible light of the changed resonance frequency.

In accordance with heat received from a target object, a visible light absorption element 10 changes a frequency component of visible light to reflect or transmit. The visible light absorption element 10 possesses a resonance frequency included in a visible light frequency region. The visible light absorption element 10 absorbs visible light of the resonance frequency. The visible light absorption element 10 thermally deforms due to temperature change to thereby change the resonance frequency, and absorbs visible light of the changed resonance frequency.

A metal-insulator-metal (MIM) high-sensitivity plasmon polariton (SPP) terahertz wave detector includes a rectangular cavity, an absorption cavity, a silver block, two waveguides, three metal films, a terahertz probe light, a signal light, and an opto-electric detector; the terahertz probe light is located at an upper end of the rectangular cavity; the rectangular cavity is located at an input end of the terahertz probe wave; and the absorption cavity is connected with a first waveguide; the silver block is disposed within the first waveguide, and is movable; and the first waveguide is connected with a second waveguide.

The present invention provides an infrared detector pixel structure and manufacturing method thereof. The bottom portion of a silicon substrate is bonded with a bonding substrate, an infrared absorbing layer in the bonding substrate is used for absorbing a part of infrared light, a closed cavity filled with infrared-sensitive gas is set in the silicon substrate, and a piezoelectric transforming unit is bonded onto the closed cavity. When the infrared-sensitive gas absorbs the infrared light to expand, the infrared sensitive gas will press the piezoelectric transforming unit, which causes piezoelectric signal generated by the piezoelectric transforming unit to be changed, thereby achieving the detection on the infrared light.