An apparatus for measuring surface temperature of a substrate being illuminated by a pulsed light beam configured to heat the substrate and by a beam of probing light, wherein the heated substrate emits a radiated beam of thermal radiation, wherein the apparatus includes an optical system configured to collect the radiated beam and a reflected beam of probing light propagating in substantially close directions, wherein the collected radiated beam and the collected reflected beam are separately routed to a respective detector via a respective routing element, the respective detectors being configured to measure the intensity of the collected radiated beam and collected reflected beam simultaneously and at the same wavelength, wherein the surface temperature is calculated based on the collected radiated beam and on the collected reflected beam.

An apparatus for measuring surface temperature of a substrate being illuminated by a pulsed light beam configured to heat the substrate and by a beam of probing light, wherein the heated substrate emits a radiated beam of thermal radiation, wherein the apparatus includes an optical system configured to collect the radiated beam and a reflected beam of probing light propagating in substantially close directions, wherein the collected radiated beam and the collected reflected beam are separately routed to a respective detector via a respective routing element, the respective detectors being configured to measure the intensity of the collected radiated beam and collected reflected beam simultaneously and at the same wavelength, wherein the surface temperature is calculated based on the collected radiated beam and on the collected reflected beam.

An infrared (IR) detector comprises a radio frequency (RF) resonator including a bottom electrode to provide acoustic excitation, a piezoelectric layer connected to the bottom electrode and suspended over a cavity defined within a semiconductor substrate, and a top layer comprising a mid-IR metamaterial and which is connected to the piezoelectric layer of the RF resonator. The top layer and the piezoelectric layer are sized to impedance match with a particular IR wavelength, to minimize reflection and maximize absorption of a particular IR wavelength, and thus make the top layer polarization sensitive to the particular IR wavelength.

Aspects of the disclosure relate to an electronic device, a method and an apparatus for measuring color temperature of ambient light, and a storage medium. The electronic device can include a display screen, a first color temperature sensor and a second color temperature sensor that are arranged side by side under the display screen, and a filter element that is located between the second color temperature sensor and the display screen to filter ambient light incident on the second color temperature sensor. The device can further include a processing element that is connected with the first color temperature sensor and the second color temperature sensor respectively to determine ambient light color temperature of an environment where the electronic device is located according to a first color temperature signal value detected by the first color temperature sensor and a second color temperature signal value detected by the second color temperature sensor.

A polarization and color sensitive pixel device and a focal plane array made therefrom. Each incorporates a thick color/polarization filter stack and microlens array for visible (0.4-0.75 micron), near infrared (0.75-3 micron), mid infrared (3-8 micron) and long wave infrared (8-15 micron) imaging. A thick pixel filter has a thickness of between about one to 10× the operational wavelength, while a thick focal plane array filter is on the order of or larger than the size or up to 10× the pitch of the pixels in the focal plane array. The optical filters can be precisely fabricated on a wafer. A filter array can be mounted directly on top of an image sensor to create a polarization camera. Alternatively, the optical filters can be fabricated directly on the image sensor.

A polarization and color sensitive pixel device and a focal plane array made therefrom. Each incorporates a thick color/polarization filter stack and microlens array for visible (0.4-0.75 micron), near infrared (0.75-3 micron), mid infrared (3-8 micron) and long wave infrared (8-15 micron) imaging. A thick pixel filter has a thickness of between about one to 10× the operational wavelength, while a thick focal plane array filter is on the order of or larger than the size or up to 10× the pitch of the pixels in the focal plane array. The optical filters can be precisely fabricated on a wafer. A filter array can be mounted directly on top of an image sensor to create a polarization camera. Alternatively, the optical filters can be fabricated directly on the image sensor.

In a thermal infrared detector having trench structures, at least one sensor element is provided between the trench structures, an etching hole through which the sensor element is hollowed out and thereby thermally insulated is provided in a substrate rear surface or on the periphery of a pixel area, and an opening portion is provided below the pixel area.

An apparatus includes a substrate, a first patterned layer, and a second patterned layer. The first patterned layer may be coupled to the substrate and may have a first metasurface pattern. The second patterned layer disposed separately from the substrate and the first patterned layer, and may have a second metasurface pattern. Movement of the first patterned layer relative to the second patterned layer may be controllable via control circuitry such that a gap distance of a gap between the first patterned layer and the second patterned layer is changed to cause a transmittance for radiant energy of a selected wavelength passing through the apparatus to change from a first transmittance value to a second transmittance value.

A method of thermographic inspection is disclosed, including applying a thermal pulse to a surface and capturing an image of a thermal response of the surface. The image is captured with an infrared camera through a polarizer having a first orientation. The method further includes determining, by analysis of the image, whether the thermal response is indicative of a crack on the surface.

A method of thermographic inspection is disclosed, including applying a thermal pulse to a surface and capturing an image of a thermal response of the surface. The image is captured with an infrared camera through a polarizer having a first orientation. The method further includes determining, by analysis of the image, whether the thermal response is indicative of a crack on the surface.