An apparatus includes a substrate, a first patterned layer, and a second patterned layer. The first patterned layer may be coupled to the substrate and may have a first metasurface pattern. The second patterned layer disposed separately from the substrate and the first patterned layer, and may have a second metasurface pattern. Movement of the first patterned layer relative to the second patterned layer may be controllable via control circuitry such that a gap distance of a gap between the first patterned layer and the second patterned layer is changed to cause a transmittance for radiant energy of a selected wavelength passing through the apparatus to change from a first transmittance value to a second transmittance value.

A polarization and color sensitive pixel device and a focal plane array made therefrom. Each incorporates a thick color/polarization filter stack and microlens array for visible (0.4-0.75 micron), near infrared (0.75-3 micron), mid infrared (3-8 micron) and long wave infrared (8-15 micron) imaging. A thick pixel filter has a thickness of between about one to 10 the operational wavelength, while a thick focal plane array filter is on the order of or larger than the size or up to 10 the pitch of the pixels in the focal plane array. The optical filters can be precisely fabricated on a wafer. A filter array can be mounted directly on top of an image sensor to create a polarization camera. Alternatively, the optical filters can be fabricated directly on the image sensor.

A short wave infrared polarimeter comprising a pixelated polarizer array and an Indium-Gallium-Arsenide (InGaAs) focal plane array. The short wave infrared polarimeter optionally includes a micro-lens array and/or an aperture layer.

A polarization and color sensitive pixel device and a focal plane array made therefrom. Each incorporates a thick color/polarization filter stack and microlens array for visible (0.4-0.75 micron), near infrared (0.75-3 micron), mid infrared (3-8 micron) and long wave infrared (8-15 micron) imaging. A thick pixel filter has a thickness of between about one to 10 the operational wavelength, while a thick focal plane array filter is on the order of or larger than the size or up to 10 the pitch of the pixels in the focal plane array. The optical filters can be precisely fabricated on a wafer. A filter array can be mounted directly on top of an image sensor to create a polarization camera. Alternatively, the optical filters can be fabricated directly on the image sensor.

The invention relates to an optical detector (110) for an optical detection, in particular, of radiation within the infrared spectral range, specifically, with regard to sensing at least one optically conceivable property of an object (112). More particular, the optical detector (110) may be used for determining transmissivity, absorption, emission, reflectance, and/or a position of at least one object (112). Further, the invention relates to a method for manufacturing the optical detector (110) and to various uses of the optical detector (110). The optical detector (110) comprises an optical filter (114) having at least a first surface (116) and a second surface (118), the second surface (118) being located oppositely with respect to the first surface (116), wherein the optical filter (114) is designed for allowing an incident light beam (120) received by the first surface (116) to pass through the optical filter (114) to the second surface (118), thereby generating a modified light beam (122) by modifying a spectral composition of the incident light beam (120); a sensor layer (128) comprising a photosensitive material (130) being deposited on the second surface (118) of the optical filter (114), wherein the sensor layer (128) is designed to generate at least one sensor signal in a manner dependent on an illumination of the sensor layer (128) by the modified light beam (122); and an evaluation device (140) designed to generate at least one item of information provided by the incident light beam (120) by evaluating the sensor signal. The optical detector (110) constitutes an improved simple, cost-efficient and, still, reliable detector for detecting optical radiation, especially within the infrared spectral range, specifically with regard to sensing at least one of transmissivity, absorption, emission and reflectance. Hereby, the optical detector (110) is capable of effectively removing stray light as far as possible.

This relates to sensor systems, detectors, imagers, and readout integrated circuits (ROICs) configured to selectively detect one or more frequencies or polarizations of light, capable of operating with a wide dynamic range, or any combination thereof. In some examples, the detector can include one or more light absorbers; the patterns and/or properties of a light absorber can be configured based on the desired measurement wavelength range and/or polarization direction. In some examples, the detector can comprise a plurality of at least partially overlapping light absorbers for enhanced dynamic range detection. In some examples, the detector can be capable of electrostatic tuning for one or more flux levels by varying the response time or sensitivity to account for various flux levels. In some examples, the ROIC can be capable of dynamically adjusting at least one of the frame rate integrating capacitance, and power of the illumination source.

A far infrared imaging system includes a first far infrared polarized light generator, a second far infrared polarized light generator, a first receiving device, a second receiving device, and a computer. The first far infrared polarized light generator emits a first far infrared polarized light, and the second far infrared polarized light generator emits a second far infrared polarized light. The first receiving device receives a first far infrared reflected polarized light, and the second receiving device receives a second far infrared reflected polarized light. The computer processes information received by the first receiver and the second receiver. The polarizer of the first far infrared polarized light generator and the second far infrared polarized light generator includes a carbon nanotube structure including a plurality of carbon nanotubes arranged substantially along the same direction.

This relates to sensor systems, detectors, imagers, and readout integrated circuits (ROICs) configured to selectively detect one or more frequencies or polarizations of light, capable of operating with a wide dynamic range, or any combination thereof. In some examples, the detector can include one or more light absorbers; the patterns and/or properties of a light absorber can be configured based on the desired measurement wavelength range and/or polarization direction. In some examples, the detector can comprise a plurality of at least partially overlapping light absorbers for enhanced dynamic range detection. In some examples, the detector can be capable of electrostatic tuning for one or more flux levels by varying the response time or sensitivity to account for various flux levels. In some examples, the ROIC can be capable of dynamically adjusting at least one of the frame rate integrating capacitance, and power of the illumination source.

Self-contained metrology wafer carrier systems and methods of measuring one or more characteristics of semiconductor wafers. The wafer carrier system may include a housing configured for transport within the automated material handling system. A support is configured to support a semiconductor wafer within a housing. A metrology system is disposed within the housing. The metrology system is operable to measure at least one characteristic of the wafer. The metrology system may include a sensing unit and a computing unit operably connected to the sensing unit.

A self-contained metrology wafer carrier systems and methods of measuring one or more characteristics of semiconductor wafers are provided. A wafer carrier system includes, for instance, a housing configured for transport within the automated material handling system, the housing having a support configured to support a semiconductor wafer in the housing, and a metrology system disposed within the housing, the metrology system operable to measure at least one characteristic of the wafer, the metrology system comprising a sensing unit and a computing unit operably connected to the sensing unit. Also provided are methods of measuring one or more characteristics of a semiconductor wafer within the wafer carrier systems of the present disclosure.