An apparatus comprises: a first circuitry to charge first and second capacitors to a predetermined voltage level; a second circuitry to discharge the first capacitor through a diode at a first time; a third circuitry to discharge the second capacitor through the diode at a second time, wherein the second time is greater than the first time; a comparator to compare a first voltage of the first capacitor with a second voltage of the second capacitor; and logic to adjust a scaling factor applied to the second voltage according to an output of the comparator.

An apparatus comprises: a first circuitry to charge first and second capacitors to a predetermined voltage level; a second circuitry to discharge the first capacitor through a diode at a first time; a third circuitry to discharge the second capacitor through the diode at a second time, wherein the second time is greater than the first time; a comparator to compare a first voltage of the first capacitor with a second voltage of the second capacitor; and logic to adjust a scaling factor applied to the second voltage according to an output of the comparator.

A diode voltage from a diode circuit can be combined with a proportional to absolute temperature (PTAT) voltage generated by a PTAT circuit to determine a temperature sensor voltage. This temperature sensor voltage may correspond to a temperature of a circuit or a localized temperature. By determining the temperature sensor voltage using a combination of a PTAT voltage and diode voltage, it is possible to remove or a PTAT circuit used to generate a bandgap voltage, which may shrink the temperature sensor and increase the accuracy of the temperature sensor circuit.

A diode voltage from a diode circuit can be combined with a proportional to absolute temperature (PTAT) voltage generated by a PTAT circuit to determine a temperature sensor voltage. This temperature sensor voltage may correspond to a temperature of a circuit or a localized temperature. By determining the temperature sensor voltage using a combination of a PTAT voltage and diode voltage, it is possible to remove or a PTAT circuit used to generate a bandgap voltage, which may shrink the temperature sensor and increase the accuracy of the temperature sensor circuit.

According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.

According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.

Methods and apparatus for extracting temperature information for an array from a signal through first and second contacts based on temperature dependent properties of the a PN junction. An example method includes connecting first and second PN junctions to a bias source to reverse bias the first and second PN junctions, connecting a first contact to the first PN junction, connecting a second contact to N type material forming a junction with P type material of the first PN junction, and extracting temperature information for the first PN junction from a signal through the first and second contacts based on temperature dependent properties of the first PN junction.

Methods and apparatus for extracting temperature information for an array from a signal through first and second contacts based on temperature dependent properties of the a PN junction. An example method includes connecting first and second PN junctions to a bias source to reverse bias the first and second PN junctions, connecting a first contact to the first PN junction, connecting a second contact to N type material forming a junction with P type material of the first PN junction, and extracting temperature information for the first PN junction from a signal through the first and second contacts based on temperature dependent properties of the first PN junction.

A semiconductor device includes a transistor array and a sense pad. The transistor array includes a plurality of transistor cells electrically connected in parallel between a source electrode and a drain structure. The drain structure is formed in a semiconductor portion based on a single-crystalline wide bandgap material. A sense element formed from the wide bandgap material includes at least one rectifying junction electrically connected between the sense pad and the source electrode.

A semiconductor device includes a transistor array and a sense pad. The transistor array includes a plurality of transistor cells electrically connected in parallel between a source electrode and a drain structure. The drain structure is formed in a semiconductor portion based on a single-crystalline wide bandgap material. A sense element formed from the wide bandgap material includes at least one rectifying junction electrically connected between the sense pad and the source electrode.