There is provided a technique that includes: a first voltage generation circuit configured to generate a first voltage having a positive temperature characteristic; a second voltage generation circuit that includes a first MOSFET having a gate of a first conductive type and a second MOSFET having a gate of a second conductive type different from the first conductive type, and configured to generate a second voltage having a negative temperature characteristic based on a difference in gate threshold voltages between the first MOSFET and the second MOSFET; and a comparator configured to output a temperature detection signal indicating a high/low relationship between a detection target temperature and a predetermined temperature, based on the first voltage and the second voltage.

There is provided a technique that includes: a first voltage generation circuit configured to generate a first voltage having a positive temperature characteristic; a second voltage generation circuit that includes a first MOSFET having a gate of a first conductive type and a second MOSFET having a gate of a second conductive type different from the first conductive type, and configured to generate a second voltage having a negative temperature characteristic based on a difference in gate threshold voltages between the first MOSFET and the second MOSFET; and a comparator configured to output a temperature detection signal indicating a high/low relationship between a detection target temperature and a predetermined temperature, based on the first voltage and the second voltage.

The digital-output temperature sensor includes a temperature sensor circuit, a current mirror circuit which makes a mirror current of a temperature detection current flow and pulls in a mirror current of a reference current to thereby output a first difference current from a first output node and output a second difference current from a second output node, a chopping circuit, and an A/D conversion circuit. The chopping circuit performs a chopping operation of making the mirror current of the reference current flow in a second state through a transistor of the current mirror circuit through which the mirror current of the temperature detection current flows in a first state, and making the mirror current of the temperature detection current flow in the second state through the transistor of the current mirror circuit through which the mirror current of the reference current flows in the first state.

The digital-output temperature sensor includes a temperature sensor circuit, a current mirror circuit which makes a mirror current of a temperature detection current flow and pulls in a mirror current of a reference current to thereby output a first difference current from a first output node and output a second difference current from a second output node, a chopping circuit, and an A/D conversion circuit. The chopping circuit performs a chopping operation of making the mirror current of the reference current flow in a second state through a transistor of the current mirror circuit through which the mirror current of the temperature detection current flows in a first state, and making the mirror current of the temperature detection current flow in the second state through the transistor of the current mirror circuit through which the mirror current of the reference current flows in the first state.

In examples, a circuit comprises a first current source coupled to a voltage source node. The circuit comprises a resistor having a first resistor terminal and a second resistor terminal, where the first resistor terminal is coupled to the first current source. The circuit comprises a bipolar transistor having a base, a collector, and an emitter, with the base coupled to the first resistor terminal, the emitter coupled to the second resistor terminal, and the collector coupled to the voltage source node. The circuit comprises a second current source coupled to the emitter and the second resistor terminal, with the second current source coupled to a ground node. The circuit comprises a Schmitt trigger having an input coupled to the emitter, the second resistor terminal, and the second current source.

A method for estimating the junction temperature on-line on an insulated gate bipolar transistor (IGBT) power module, including the following steps. Estimate the junction temperature by the temperature sensitive electrical parameter method, set the space thermal model of the extended state, and apply the Kalman filter to the junction temperature estimation. The temperature sensitive electrical parameter method estimates the junction temperature of the IGBT power module in real time, selects the IGBT conduction voltage drop V.sub.CE(ON) as the temperature sensitive electrical parameter, and provides a V.sub.CE(ON) on-line measuring circuit. The power loss of the diode and IGBT and the estimated value of junction temperature obtained by the temperature sensitive electrical parameter method are taken as the input of the Kalman filter, and measurement noise and process noise are considered to obtain an optimal estimated value of junction temperature.

A method for estimating the junction temperature on-line on an insulated gate bipolar transistor (IGBT) power module, including the following steps. Estimate the junction temperature by the temperature sensitive electrical parameter method, set the space thermal model of the extended state, and apply the Kalman filter to the junction temperature estimation. The temperature sensitive electrical parameter method estimates the junction temperature of the IGBT power module in real time, selects the IGBT conduction voltage drop V.sub.CE(ON) as the temperature sensitive electrical parameter, and provides a V.sub.CE(ON) on-line measuring circuit. The power loss of the diode and IGBT and the estimated value of junction temperature obtained by the temperature sensitive electrical parameter method are taken as the input of the Kalman filter, and measurement noise and process noise are considered to obtain an optimal estimated value of junction temperature.

A semiconductor module with temperature characteristics adjustable through a measurement device. The semiconductor module includes a mounting board having a semiconductor chip and an integrated circuit mounted thereon. The semiconductor chip includes a switching device and a diode for temperature detection, a forward voltage of the diode being measurable by the measurement device. The integrated circuit includes a correction circuit configured to generate a corrected reference voltage, and a control circuit configured to receive the corrected reference voltage and a drive signal, and to control switching of the switching device based on the corrected reference voltage and the drive signal. The mounting board includes a pad configured to be coupled to the diode with a wire, and the pad has an area larger than a sum of a first area to be coupled to the wire and a second area to be in contact with the probe of the measurement device for measuring the forward voltage.

A semiconductor module with temperature characteristics adjustable through a measurement device. The semiconductor module includes a mounting board having a semiconductor chip and an integrated circuit mounted thereon. The semiconductor chip includes a switching device and a diode for temperature detection, a forward voltage of the diode being measurable by the measurement device. The integrated circuit includes a correction circuit configured to generate a corrected reference voltage, and a control circuit configured to receive the corrected reference voltage and a drive signal, and to control switching of the switching device based on the corrected reference voltage and the drive signal. The mounting board includes a pad configured to be coupled to the diode with a wire, and the pad has an area larger than a sum of a first area to be coupled to the wire and a second area to be in contact with the probe of the measurement device for measuring the forward voltage.

A temperature sensing device for a temperature-based tamper detection system includes an integrated circuit (IC) and a logic circuit. The logic circuit sends an enable signal to the IC, causing it to measure the device temperature, and initiates a security timer. In response to not receiving the device temperature before the security timer expires, the logic circuit outputs a tamper event signal and an error code. The logic circuit can disable the enable signal in response to not receiving the device temperature before the timer expires. In some implementations, the logic circuit is a first logic circuit, and the IC includes an analog integrated circuit (AIC) and a second logic circuit. The second logic circuit receives the enable signal from the first logic circuit, causes the AIC to measure the device temperature, and outputs a ready signal and the device temperature to the first logic circuit.