The present disclosure relates to a method for manufacturing an apparatus for determining and/or monitoring temperature of a medium comprising method steps as follows: arranging a sensor element in a sensor head, producing a vacuum in an internal volume of the sensor head, introducing at least one fill material into at least a portion of the internal volume of the sensor head, and closing the sensor head. The present invention relates, moreover, to a correspondingly manufactured apparatus.

The present disclosure relates to a method for manufacturing an apparatus for determining and/or monitoring temperature of a medium comprising method steps as follows: arranging a sensor element in a sensor head, producing a vacuum in an internal volume of the sensor head, introducing at least one fill material into at least a portion of the internal volume of the sensor head, and closing the sensor head. The present invention relates, moreover, to a correspondingly manufactured apparatus.

There is described a method of detecting failure in an array of thermocouples connected in parallel. The method comprising: during an operation mode of the array of thermocouples, measuring a voltage V across the array of thermocouples, the voltage V associated with a temperature T; during a failure detection mode of the array of thermocouples, shunting the array of thermocouples, and measuring a shunt voltage Vs occurring across a resistive element connected in series with the array of thermocouples; comparing the shunt voltage Vs to an expected shunt voltage Vs_exp for the array of thermocouples at the temperature T; and generating a failure signal indicative of a detected failure in the array of thermocouples when the shunt voltage Vs deviates from the expected shunt voltage Vs_exp by more than a deviation threshold.

A microscale thermocouple probe for intracellular temperature measurements comprises a cantilever structure including a suspended portion extending from a support, where the suspended portion includes first and second conductive lines on a surface thereof. The first and second conductive lines extend along the surface and meet at a tip of the suspended portion to define a thermocouple junction.

A system and method for measuring average temperature of gas in an axial cross-section of a gas turbine engine gas path, involving diverting gas samples from different positions in the axial cross-section to a gas mixing chamber and measuring a temperature of the resulting mixed gas.

A system and method for measuring average temperature of gas in an axial cross-section of a gas turbine engine gas path, involving diverting gas samples from different positions in the axial cross-section to a gas mixing chamber and measuring a temperature of the resulting mixed gas.

A memory thermal throttling method and a memory thermal throttling system are provided. The method includes: performing, by a testing equipment, test modes on a memory storage device, and obtaining an internal temperature of a memory control circuit unit, a work loading of each memory package and a surface temperature of each memory package to establish a linear relationship between the work loading, the internal temperature, and the surface temperature; storing, by the testing equipment, the linear relationship in the memory storage device; using, by the memory storage device, the linear relationship based on a current internal temperature of the memory control circuit unit and a current work loading of a first memory package of the memory packages to calculate a predicted surface temperature of the first memory package; adjusting, by the memory storage device, an operating frequency for accessing the first memory package based on the predicted surface temperature.

An embodiment of the invention may include a semiconductor structure, method of use and method of manufacture. The structure may include a heating element located underneath a temperature-controlled portion of the device. A method of operating the semiconductor device may include providing current to a thin film heater located beneath a temperature-controlled region of the semiconductor device. The method may include performing temperature dependent operations in the temperature-controlled region.

A thermometry apparatus used during hyperthermia therapy, which has a mat that can be used in combination with a non-invasive thermometry system. The mat has a top face and a bottom face. Between the top face and the bottom face are embedded wires. The wires provide skin and treatment head thermal information based on the thermal coefficient of resistance of the wires or via two metals in a thermocouple configuration. The mat is placed between the skin and an ultrasound head. The mat is flexible enough to conform to the patient’s body shape at the treatment point. The mat may be used in combination with an infrared camera, where at least one IR camera is pointed at a semi perpendicular angle to the mat, whereby the IR camera measures the temperature directly from the mat side and continually below the ultrasound head providing thermal depth measurements.

A thermometry apparatus used during hyperthermia therapy, which has a mat that can be used in combination with a non-invasive thermometry system. The mat has a top face and a bottom face. Between the top face and the bottom face are embedded wires. The wires provide skin and treatment head thermal information based on the thermal coefficient of resistance of the wires or via two metals in a thermocouple configuration. The mat is placed between the skin and an ultrasound head. The mat is flexible enough to conform to the patient’s body shape at the treatment point. The mat may be used in combination with an infrared camera, where at least one IR camera is pointed at a semi perpendicular angle to the mat, whereby the IR camera measures the temperature directly from the mat side and continually below the ultrasound head providing thermal depth measurements.