Some aspects of the present disclosure feature a sensing device (e.g. for temperature, moisture or detection of substances) comprising a magnetic bias layer, a resonator, a spacer, and an environmental change receptor. The spacer is disposed between the magnetic bias layer and the resonator. At least one of the resonator surfaces has a predefined channel. The environmental change receptor is disposed proximate to the predefined channel. In response to a change in environment, the environmental change receptor distributes along a part of the channel.

In an integrated circuit device having a microelectromechanical-system (MEMS) resonator and a temperature transducer, a clock signal is generated by sensing resonant mechanical motion of the MEMS resonator and a temperature signal indicative of temperature of the MEMS resonator is generated via the temperature transducer. The clock signal and the temperature signal are output from the integrated circuit device concurrently.

Some aspects of the present disclosure feature a sensing device comprising a magnetic bias layer, a resonator, a spacer, and an environmental change receptor. The environmental change receptor is disposed on a surface of the resonator. The mass of the environmental change receptor is changed in response to a change in environment. The resonant frequency of the sensing device shifts in response to the mass change of the environmental change receptor.

Some aspects of the present disclosure feature a sensing device comprising a magnetic bias layer, a resonator, a spacer, and an environmental change receptor. The environmental change receptor is disposed on a surface of the resonator. The mass of the environmental change receptor is changed in response to a change in environment. The resonant frequency of the sensing device shifts in response to the mass change of the environmental change receptor.

Some aspects of the present disclosure feature a sensing device comprising a magnetic bias layer, a resonator, a spacer, and a housing. The spacer includes an environmental change receptor. The thickness of the environmental change receptor rapidly increases in response to a change to an environment variable.

Some aspects of the present disclosure feature a sensing device comprising a magnetic bias layer, a resonator, a spacer, and a housing. The spacer includes an environmental change receptor. The thickness of the environmental change receptor rapidly increases in response to a change to an environment variable.

Some aspects of the present disclosure feature a system for sensing a change in environment comprising a MMR sensor and a reader. The MMR sensor is configured to be disposed in the environment. The MMR sensor comprises a magnetic bias layer, a resonator, a spacer, and an environmental change receptor. The reader is configured to measure a frequency characteristic of the MMR sensor after the environmental variable changes and the change to the environmental variable is evaluated based on the frequency characteristic.

Some aspects of the present disclosure feature a system for sensing a change in environment comprising a MMR sensor and a reader. The MMR sensor is configured to be disposed in the environment. The MMR sensor comprises a magnetic bias layer, a resonator, a spacer, and an environmental change receptor. The reader is configured to measure a frequency characteristic of the MMR sensor after the environmental variable changes and the change to the environmental variable is evaluated based on the frequency characteristic.

A semiconductor integrated circuit (IC) comprising: a first ring oscillator (ROSC) circuit and a second ROSC circuit at spaced apart locations in the IC, each ROSC circuit having a respective oscillation frequency in operation that varies with temperature; a semiconductor temperature sensor, located in the IC proximate to the first ROSC circuit and providing a sensor output signal indicative of temperature; and at least one processor, configured to indicate a temperature at the second ROSC circuit based at least on: the sensor output signal, the oscillation frequency of the second ROSC circuit, and the oscillation frequency of the first ROSC circuit.

A semiconductor integrated circuit (IC) comprising: a first ring oscillator (ROSC) circuit and a second ROSC circuit at spaced apart locations in the IC, each ROSC circuit having a respective oscillation frequency in operation that varies with temperature; a semiconductor temperature sensor, located in the IC proximate to the first ROSC circuit and providing a sensor output signal indicative of temperature; and at least one processor, configured to indicate a temperature at the second ROSC circuit based at least on: the sensor output signal, the oscillation frequency of the second ROSC circuit, and the oscillation frequency of the first ROSC circuit.