A method of detecting temperature of an electrical terminal. The method includes: applying a material patch to a surface of the electrical terminal, the thermal mass of the material patch is less than 25 percent of the thermal mass of the electrical terminal, whereby the material patch does not appreciably increase the electrical resistance or thermal capacitance of the electrical terminal; and remotely sensing a change in the material patch with an electrically isolated circuit which is external to the electrical terminal to determine if the electrical terminal is operating at a safe temperature to optimize current flow across the electrical terminal.

Disclosed is a technique for characterizing a product utilizing novel measurements based on the reactive and resistive signals exhibited by the product in an electromagnetic field.

Disclosed is a technique for characterizing a product utilizing novel measurements based on the reactive and resistive signals exhibited by the product in an electromagnetic field.

Systems and methods are provided for controlling welding. One embodiment is a method for controlling welding. The method includes initiating induction welding by operating an induction coil along a weld interface of a first composite part comprising a matrix of thermoplastic reinforced by fibers, in order to join the first composite part to a second composite part, determining a measured magnetic field strength at a location distinct from the induction coil, and determining a welding temperature at the weld interface of the first composite part based on the measured magnetic field strength.

A hybrid integrated thermal sensor device includes a magnetic tunnel junction (MTJ) device electrically coupled in series with at least one CMOS transistor and disposed between a voltage rail terminal and a ground terminal. An output terminal is electrically coupled to a drain of the at least one CMOS transistor. The MTJ operates in an anti-parallel state and the output terminal provides a voltage indicative of a temperature of the MTJ device based on an MTJ antiparallel resistance. A distributed sensor network for real-time thermal mapping of an integrated circuit (IC) is also described.

Embodiments of the present invention relate to a system and method for performing temperature-dependent measurements of a magnetic nanoparticle sample. The system includes high frequency coils and sample temperature tunable assembly to determine the specific relaxation process for magnetic nanoparticle sample using both time and frequency domain techniques. During the temperature-dependent measurements of a magnetic nanoparticle sample, system in accordance with embodiments of the present invention resolve the nanoparticle dynamics using a temperature-tunable dual mode, AC susceptibility and magnetic relaxometry, to cover a broad range of frequencies and time scales. Other operational modes of the invention can drive the nanoparticles with arbitrary waveforms (sinusoidal, sum of sinusoids, or repeated pulses) to elicit and measure tailored response behavior from the magnetic nanoparticle sample.

A method and system for sensing and controlling temperature with magnetic fields are provided. The method comprises placing a compound in thermal communication with a number of temperature or heat sources and placing a number of magnets in thermal communication with the compound. A number of magnetic sensors are placed in electromagnetic communication with the number of magnets. Changes in the magnetic field of the magnets are detected by the sensors and used to determine the temperature of the compound according to a model that maps magnetic field characteristics to temperature. The amount of cure of the compound can then be estimated from the temperature. The temperature or heat sources are controlled in response to the temperature measurement and the estimated amount of cure of the compound.

A method and system for sensing and controlling temperature with magnetic fields are provided. The method comprises placing a compound in thermal communication with a number of temperature or heat sources and placing a number of magnets in thermal communication with the compound. A number of magnetic sensors are placed in electromagnetic communication with the number of magnets. Changes in the magnetic field of the magnets are detected by the sensors and used to determine the temperature of the compound according to a model that maps magnetic field characteristics to temperature. The amount of cure of the compound can then be estimated from the temperature. The temperature or heat sources are controlled in response to the temperature measurement and the estimated amount of cure of the compound.

GaN/Al.sub.0.20Ga.sub.0.80N/GaN heterostructures Micro-Hall effect sensors providing simultaneous current and temperature detection over at least a best performance temperature range of −183° C. and 252° C.

GaN/Al.sub.0.20Ga.sub.0.80N/GaN heterostructures Micro-Hall effect sensors providing simultaneous current and temperature detection over at least a best performance temperature range of −183° C. and 252° C.