Absolute temperature measurements of integrated photonic devices can be accomplished with integrated bandgap temperature sensors located adjacent the photonic devices. In various embodiments, the temperature of the active region within a diode structure of a photonic device is measured with an integrated bandgap temperature sensor that includes one or more diode junctions either in the semiconductor device layer beneath the active region or laterally adjacent to the photonic device, or in a diode structure formed above the semiconductor device layer and adjacent the diode structure of the photonic device.

A temperature measuring device includes a device main body, a signal control module, a movable shutter module, and a first and a second non-contacting temperature sensing module. The movable shutter module includes an electric control driver, a movable shutter structure, and an electric control heater, and the movable shutter structure includes a black substance for generating a predetermined heating temperature from being heated by the electric control heater. The first non-contacting temperature sensing module is configured for measuring an object temperature of an object so as to obtain object temperature information of the object. The second non-contacting temperature sensing module is configured for measuring the predetermined heating temperature generated by the black substance of the movable shutter structure so as to obtain black body temperature information of the black substance. The first non-contacting temperature sensing module can be calibrated according to the black body temperature information.

A thermoplastic composite welding microwire temperature measurement system broadly comprises a plurality of moveable antennae configured to transmit interrogation signals, a rail system including a motorized linear stage configured to move the antennae along a weld line, and a reader or processor configured to determine a position of the microwire temperature sensor and determine a welding temperature based on response signals of the sensor. The interrogation signal corresponds to two different maximum ramp current amplitudes to create two re-magnetization pulses non-overlapping in the time domain.

A calibration setup for calibrating a temperature sensor includes a temperature calibrator, a temperature measuring unit connected to the temperature sensor, a camera unit configured to detect a measured temperature value and to transmit the measured temperature value to a storage medium in the temperature calibrator. A method of calibrating a temperature sensor using the calibration setup includes heating the temperature sensor to a first calibration temperature; detecting a first temperature value by the camera unit; transmitting the first temperature value from the camera unit to a storage medium in the temperature calibrator; heating the temperature sensor to at least a second calibration temperature; detecting a second temperature value by the camera unit; transmitting the second temperature value from the camera unit to the storage medium; and displaying the detected and stored temperature values on a calibrator indicator display in a respective association with the calibration temperatures.

A system includes a conditioning circuit, resistors connected to pins of the conditioning circuit, and measurement sensors connected to pins of the conditioning circuit. The conditioning circuit is configured to determine resistance values of the resistors and to determine a set of addresses for the measurement sensors based upon a combination of the resistance values of the resistors.

According to examples, an optical fiber-based sensing membrane may include at least one optical fiber, and a substrate. The at least one optical fiber may be integrated in the substrate. The optical fiber-based sensing membrane may include, based on a specified geometric pattern of the at least one optical fiber, an optical fiber-based sensing membrane layout. The substrate may include a thickness and a material property that are specified to ascertain, via the at least one optical fiber and based on the optical fiber-based sensing membrane layout, a thermal and/or a mechanical property associated with a device, or a radiation level associated with a device environment.

There is provided a mounting table on which a substrate to be inspected is mounted. The mounting table comprises: a plurality of temperature sensors, each configured to measure a temperature of a corresponding one of a plurality of spots on the mounting table; and electrode pads, each connected to a corresponding one of the temperature sensors and installed on a mounting surface.

A low power temperature detection method, system, and apparatus sense when a temperature threshold is reached by connecting a current conveyor (111) with a startup bias circuit (112) having a first FET (P1) (connected to level shift a reference voltage to provide an input voltage V.sub.S1), a first diode-connected BJT (Q0) (connected to generate a base-emitter voltage based on the junction temperature), and a second FET (P2) (connected to level shift the base-emitter voltage), where the startup bias circuit (112) selectively connects the current conveyor (111) to ground to form a closed loop that is activated only when an emitter current at the first diode-connected BJT (Q0) enters a self-turned-on operation region, thereby activating the current conveyor to detect a temperature threshold being reached by the device junction temperature.

The present application provides a temperature calibration method for a semiconductor machine, including following steps: providing at least one temperature calibration sheet, the temperature calibration sheet comprising a transistor having a voltage-temperature characteristic curve corresponding to a set current; placing the temperature calibration sheet in a measurement region of the semiconductor machine; energizing the temperature calibration sheet at an energizing current being the same as the set current, and measuring a voltage of the transistor; and, obtaining a temperature of the transistor according to the voltage-temperature characteristic curve of the transistor by using the voltage as a known parameter, the temperature being a temperature of the measurement region of the semiconductor machine. The accuracy of temperature calibration is greatly improved, the performance of the semiconductor machine and the yield of the semiconductor manufacturing process are also improved.

Systems, devices, and methods related to temperature sensors for electronic devices are provided. An example temperature sensor device includes analog temperature sensor circuitry to generate a plurality of voltages indicative of a temperature; an analog-to-digital converter (ADC) disposed downstream of the analog temperature sensing circuitry; switched-capacitor amplifier circuitry disposed before the ADC, the switched-capacitor amplifier circuitry comprising a single-ended amplifier to amplify the plurality of voltages with respect to a common voltage; a first switch coupled between the analog temperature sensor circuitry and the switched-capacitor amplifier circuitry to provide a sampling phase and an integration phase; and digital calculation circuitry to calculate a temperature value based on the plurality of amplified voltages.