G01L1/18

FLEXIBLE PRESSURE SENSORS
20220390298 · 2022-12-08 ·

Implementations are directed to a pressure-sensing device including a pressure-sensitive sheet, one or more pressure-sensitive input regions disposed along the pressure-sensitive sheet including a first conductive thread including a first length in contact with the pressure-sensitive sheet, and a second conductive thread including a second length in contact with the pressure-sensitive sheet. At least a first portion of the first length of the first conductive thread passes through the pressure-sensitive sheet through a first hole in the pressure-sensitive sheet at a first location and a second portion of the second length of the second conductive thread passes through the pressure-sensitive sheet through a second hole in the pressure-sensitive sheet at a second location.

Conductive polymer composite based sensor

One aspect relates to a conductive polymer composite based sensor, a detection unit comprising such sensor, a method for manufacturing a conductive polymer composite based sensor, and a use of the conductive polymer composite based sensor or the detection unit. The conductive polymer composite based sensor includes a substrate and a sensor material. The sensor material includes an insulating polymer matrix component and an electrically conductive component dispersed in the polymer matrix component to form the conductive polymer composite. The sensor material is pre-strained and applied to the substrate to form the sensor.

Conductive polymer composite based sensor

One aspect relates to a conductive polymer composite based sensor, a detection unit comprising such sensor, a method for manufacturing a conductive polymer composite based sensor, and a use of the conductive polymer composite based sensor or the detection unit. The conductive polymer composite based sensor includes a substrate and a sensor material. The sensor material includes an insulating polymer matrix component and an electrically conductive component dispersed in the polymer matrix component to form the conductive polymer composite. The sensor material is pre-strained and applied to the substrate to form the sensor.

Semiconductor stress sensor

A piezo-resistor sensor includes a diffusion of a first conductivity type in a well of an opposite second type, contacts with islands in the diffusion, interconnects with the contacts, and a shield covers the diffusion between the contacts and extends over side walls of the diffusion between the contacts. Each interconnect covers the diffusion at the corresponding contact and extends over edges of the diffusion, and each island is at a side covered by its interconnect. A guard ring of the second type is around the diffusion. The shield covers the well between the diffusion and the ring and the edge of the ring facing the diffusion. If a gap between the shield and the interconnect is present, the ring bridges this gap, and/or the edges of the diffusion are completely covered by the combination of the shield and the interconnects.

Semiconductor stress sensor

A piezo-resistor sensor includes a diffusion of a first conductivity type in a well of an opposite second type, contacts with islands in the diffusion, interconnects with the contacts, and a shield covers the diffusion between the contacts and extends over side walls of the diffusion between the contacts. Each interconnect covers the diffusion at the corresponding contact and extends over edges of the diffusion, and each island is at a side covered by its interconnect. A guard ring of the second type is around the diffusion. The shield covers the well between the diffusion and the ring and the edge of the ring facing the diffusion. If a gap between the shield and the interconnect is present, the ring bridges this gap, and/or the edges of the diffusion are completely covered by the combination of the shield and the interconnects.

SYSTEM AND METHOD FOR FLUID SENSING
20220373492 · 2022-11-24 ·

A system and method for moisture sensing and methods for making and using same. The present disclosure describes a fluid sensing array that comprises a first and second set of conducting lines with a fluid layer disposed between the first and second set of conducting lines. Proximate intersections of the sets of conducting lines define a plurality of sensing regions. Reading the plurality of sensing regions may provide for calculating a value for fluid volume present, a value for surface area where fluid is present, or a determination of the identity, class or a characteristic of a fluid present.

SYSTEM AND METHOD FOR FLUID SENSING
20220373492 · 2022-11-24 ·

A system and method for moisture sensing and methods for making and using same. The present disclosure describes a fluid sensing array that comprises a first and second set of conducting lines with a fluid layer disposed between the first and second set of conducting lines. Proximate intersections of the sets of conducting lines define a plurality of sensing regions. Reading the plurality of sensing regions may provide for calculating a value for fluid volume present, a value for surface area where fluid is present, or a determination of the identity, class or a characteristic of a fluid present.

MICROELECTROMECHANICAL MIRROR DEVICE WITH PIEZOELECTRIC ACTUATION AND PIEZORESISTIVE SENSING HAVING SELF-CALIBRATION PROPERTIES

A microelectromechanical mirror device has, in a die of semiconductor material: a fixed structure defining a cavity; a tiltable structure carrying a reflecting region elastically suspended above the cavity; at least a first pair of driving arms coupled to the tiltable structure and carrying respective piezoelectric material regions which may be biased to cause a rotation thereof around at least one rotation axis; elastic suspension elements coupling the tiltable structure elastically to the fixed structure and which are stiff with respect to movements out of the horizontal plane and yielding with respect to torsion; and a piezoresistive sensor configured to provide a detection signal indicative of the rotation of the tiltable structure. At least one test structure is integrated in the die to provide a calibration signal indicative of a sensitivity variation of the piezoresistive sensor in order to calibrate the detection signal.

Integration of stress decoupling and particle filter on a single wafer or in combination with a waferlevel package

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

Integration of stress decoupling and particle filter on a single wafer or in combination with a waferlevel package

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.