Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor. The sensor employs piezoresistive or piezoelectric sensing elements for force sensing where the force is converted to strain and converted to electrical signal. In one aspect, both the piezoresistive and the piezoelectric sensing elements are formed on one substrate and later bonded to another substrate on which the integrated circuitry is formed. In another aspect, the piezoelectric sensing element is formed on one substrate and later bonded to another substrate on which both the piezoresistive sensing element and the integrated circuitry are formed.

A cantilever force sensor with relatively lower On-Force is disclosed, which comprises a top stack, a bottom stack, and a spacer. The first spacer is configured between the top stack and the bottom stack and configured in a first side of the force sensor. A second side, opposite to the first side, of the top stack, is cantilevered from the bottom stack. When the force sensor is depressed from the top side, the second side of the top stack moves down using the first spacer as a fulcrum. Since the cantilevered side can be easily depressed down so that the On-Force for the force sensor is reduced and hence a force sensor with a relatively higher sensitivity is created.

Methods and apparatus are described that improve the reliability and configurability of sensor systems.

Methods and apparatus are described that improve the reliability and configurability of sensor systems.

Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.

Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.

Provided are a surface stress sensor that enables deterioration in measurement precision to be suppressed and a method for manufacturing the same. A surface stress sensor includes: a membrane configured to be bent by applied surface stress; a frame member configured to surround the membrane with gaps interposed therebetween when viewed from the thickness direction of the membrane; at least a pair of coupling portions configured to couple the membrane and the frame member; a flexible resistor configured to be disposed on at least one of the coupling portions and have a resistance value that changes according to bending induced in the coupling portion; and a support base member configured to be connected to the frame member and overlap the frame member when viewed from the thickness direction of the membrane, in which a cavity portion is disposed between the membrane and the support base member.

Provided are a surface stress sensor that enables deterioration in measurement precision to be suppressed and a method for manufacturing the same. A surface stress sensor includes: a membrane configured to be bent by applied surface stress; a frame member configured to surround the membrane with gaps interposed therebetween when viewed from the thickness direction of the membrane; at least a pair of coupling portions configured to couple the membrane and the frame member; a flexible resistor configured to be disposed on at least one of the coupling portions and have a resistance value that changes according to bending induced in the coupling portion; and a support base member configured to be connected to the frame member and overlap the frame member when viewed from the thickness direction of the membrane, in which a cavity portion is disposed between the membrane and the support base member.

The present application provides a strain sensing film, a pressure sensor, and a hybrid strain sensing system. The strain sensing film includes a semiconductor thin-film, at least two resistors are disposed on the semiconductor thin-film, one resistor has a different response to a strain with respect to at least another resistor, thereby enhancing resistance to external environmental disturbances and improving the accuracy of pressure measurements.

Described herein are input structures that include an input surface and one or more sensor modules attached to the input surface. Each sensor module includes one or more sensors operably attached to a substrate. The one or more sensors are operable to detect strain on the substrate. One or more portions of the substrate are removed to produce a stress concentration region in proximity to at least one sensor. The stress concentration region concentrates strain in proximity to the at least one sensor.