An electric device for detecting pressure and a pressure sensor includes an electric current channel arranged to conduct an electric current, wherein the electric current channel is disposed adjacent or proximate to a pressure sensitive structure. Upon the pressure sensitive structure being subjected to a change of an external pressure, the pressure sensitive structure is arranged to manipulate a first electrical characteristic of the electric current channel.

A semiconductor sensing device generates an output based on a sensor. A connection point of an output circuit constituted by first and second switching output elements connected so as to be complementary is connected to an output terminal. Between the first switching output element and the connection point of the output circuit, a first switching element is connected. Between the second switching output element and the connection point of the output circuit, a second switching element is connected. When voltage of the output terminal is a voltage lower than a lower limit clamp voltage, the first switching element turns OFF. When the voltage of the output terminal is a voltage higher than an upper limit clamp voltage, the second switching element turns OFF.

A flexible bimodal sensor includes a gate electrode; a flexible substrate; a source electrode disposed on the flexible substrate; a drain electrode disposed on the flexible substrate apart from the source electrode; a channel layer disposed on the source electrode and the drain electrode and a portion of the flexible substrate between the source electrode and the drain electrode; and a gate insulating layer comprising a plurality of protrusions, the gate insulating layer being disposed on the channel layer and arranged between the channel layer and the gate electrode. The drain electrode outputs a current signal simultaneously indicating a temperature value and a pressure value sensed by the flexible bimodal sensor.

An ultrasonic flowmeter for measuring the flow speed and/or the volumetric flow rate of a fluid includes a measurement sensor, at least two ultrasonic transducers, a pressure sensor, and a calibration connector. The ultrasonic flowmeter allows a simple and inexpensive calibration of the pressure sensor in the flowmeter.

An electric device for detecting pressure and a pressure sensor includes an electric current channel arranged to conduct an electric current, wherein the electric current channel is disposed adjacent or proximate to a pressure sensitive structure. Upon the pressure sensitive structure being subjected to a change of an external pressure, the pressure sensitive structure is arranged to manipulate a first electrical characteristic of the electric current channel.

An electric device for detecting pressure and a pressure sensor includes an electric current channel arranged to conduct an electric current, wherein the electric current channel is disposed adjacent or proximate to a pressure sensitive structure. Upon the pressure sensitive structure being subjected to a change of an external pressure, the pressure sensitive structure is arranged to manipulate a first electrical characteristic of the electric current channel.

A pressure sensing device having a Dirac material and a method of operating the same are provided. The pressure sensing device includes a Dirac material pattern disposed on a substrate and having a band structure in which Dirac cones meet at a Dirac point. A source electrode and a drain electrode are respectively connected to the Dirac material pattern. A spacer layer including a cavity on the Dirac material pattern is disposed on the substrate. A gate electrode overlapping the Dirac material pattern is disposed on the cavity.

An apparatus for use in determining the relative vapor pressure of a fluid in an environment in which the apparatus is located, the apparatus comprising a first layer (512) configured to enable a flow of charge carriers from a source electrode (505) to a drain electrode (506), a second layer (513) configured to control the conductance of the first layer (512) using an electric field formed between the first (512) and second layers (513) and a third layer (514) positioned between the first and second layers to prevent a flow of charge carriers therebetween to enable formation of the electric field, wherein the second layer (513) is configured to exhibit a charge distribution on interaction with the fluid, the charge distribution giving rise to the electric field between the first (512) and second (513) layers, and wherein the second layer (513) is configured such that the charge distribution and electric field strength are dependent upon the relative vapor pressure of the fluid in the environment (516), thereby allowing the relative vapor pressure to be derived from a measurement of the conductance of the first layer (512).

Sensors and methods of operating sensors are described herein. One sensor includes a number of III-nitride strain sensitive devices and a number of passive electrical components that connects each of them to one of the III-nitride strain sensitive devices.

A mass flow controller for controlling flow rate comprising a controller, a valve assembly, and at least one pressure sensor, valve position sensor, and temperature sensor; wherein, at least one of the sensors is a semiconductor based sensor. The valve assembly is in fluid communication with at least one upstream location and at least one downstream location. The at least one pressure sensor is in in fluid communication with the at least one upstream location and the at least one downstream location. The valve assembly can comprise at least one piezoelectric or solenoid valve. The controller is communicable coupled with the valve assembly and at least one of the sensors. The controller determines at least one of: pressure; position; and temperature. The controller further causes an adjustment to valve stroke based on an actual fluid flow rate and at least one of the pressure, position, temperature, and a predetermined value.