A sensor for detecting a position of an effective surface of the sensor includes a first magnetic field generator, a magnetic tunnel resistor, and a second magnetic field generator. The first magnetic field generator generates a first magnetic field that is oriented in an axis of a movement direction of the effective surface. The magnetic tunnel resistor is spaced from the first magnetic field generator in the extension of the axis. The magnetic tunnel resistor has a first magnetic layer, a second magnetic layer, and a tunnel barrier. The tunnel barrier is arranged between the first layer and the second layer, and the first layer is electrically insulated from the second layer. The second magnetic field generator is configured to generate a second magnetic field that is oriented transversally to the axis. The second magnetic field generator is oriented in a fixed manner relative to the tunnel resistor.

A sensor for detecting a position of an effective surface of the sensor includes a first magnetic field generator, a magnetic tunnel resistor, and a second magnetic field generator. The first magnetic field generator generates a first magnetic field that is oriented in an axis of a movement direction of the effective surface. The magnetic tunnel resistor is spaced from the first magnetic field generator in the extension of the axis. The magnetic tunnel resistor has a first magnetic layer, a second magnetic layer, and a tunnel barrier. The tunnel barrier is arranged between the first layer and the second layer, and the first layer is electrically insulated from the second layer. The second magnetic field generator is configured to generate a second magnetic field that is oriented transversally to the axis. The second magnetic field generator is oriented in a fixed manner relative to the tunnel resistor.

According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

A sensor includes a film portion deformable by external force, a support body supporting the film portion, and a magnetoresistive element portion on the film portion and including a unit element that includes a first magnetic layer whose magnetization direction changes in accordance with deformation of the film portion, a second magnetic layer whose magnetization direction is fixed, and an intermediate layer between the first and second magnetic layers. The film portion includes a first side portion in a portion of an outer edge of the film portion. A slit portion is provided in the film portion and includes at least a portion along the first side portion, so that the film portion includes a connection portion in which the first side portion is partially connected to the support body. A magnetoresistive element portion is provided in the connection portion.

A sensor includes a film portion deformable by external force, a support body supporting the film portion, and a magnetoresistive element portion on the film portion and including a unit element that includes a first magnetic layer whose magnetization direction changes in accordance with deformation of the film portion, a second magnetic layer whose magnetization direction is fixed, and an intermediate layer between the first and second magnetic layers. The film portion includes a first side portion in a portion of an outer edge of the film portion. A slit portion is provided in the film portion and includes at least a portion along the first side portion, so that the film portion includes a connection portion in which the first side portion is partially connected to the support body. A magnetoresistive element portion is provided in the connection portion.

A sub-micrometer pressure sensor is provided that includes a multilayered magnetic tunnel junction (MTJ) pillar that contains a non-magnetic metallic spacer separating a first magnetic free layer from a second magnetic free layer. The presence of the non-magnetic metallic spacer in the multilayered MTJ pillar improves the sensitivity without compromising area, and makes the pressure sensor binary (either “on” or “off”) with little or no drift, and sensitivity change over time. Moreover, the resistivity switch in such a pressure sensor is instantly and a low error rate is observed.

A sub-micrometer pressure sensor is provided that includes a multilayered magnetic tunnel junction (MTJ) pillar that contains a non-magnetic metallic spacer separating a first magnetic free layer from a second magnetic free layer. The presence of the non-magnetic metallic spacer in the multilayered MTJ pillar improves the sensitivity without compromising area, and makes the pressure sensor binary (either “on” or “off”) with little or no drift, and sensitivity change over time. Moreover, the resistivity switch in such a pressure sensor is instantly and a low error rate is observed.

In order to be able to carry out an accurate and simple contactless load measurement on test objects made from materials which are optimized with respect to the intended purpose thereof, the test object (14) and a load measuring apparatus for measuring a load on the test object, wherein the load measuring apparatus (12) has a magnetic field generating device (18) for generating a magnetic field in a measuring region (11) of the test object (14) and a first and a second magnetic field capturing device (20, 22) for capturing a magnetic field parameter which changes on account of the load, characterized in that the measuring region (11) has a layer (13) made of a ferromagnetic amorphous or nanocrystalline metal alloy with maximum particle sizes of less than 1 μm.

In order to be able to carry out an accurate and simple contactless load measurement on test objects made from materials which are optimized with respect to the intended purpose thereof, the test object (14) and a load measuring apparatus for measuring a load on the test object, wherein the load measuring apparatus (12) has a magnetic field generating device (18) for generating a magnetic field in a measuring region (11) of the test object (14) and a first and a second magnetic field capturing device (20, 22) for capturing a magnetic field parameter which changes on account of the load, characterized in that the measuring region (11) has a layer (13) made of a ferromagnetic amorphous or nanocrystalline metal alloy with maximum particle sizes of less than 1 μm.