A time-dependent substrate temperature to be applied during a plasma process is determined. The time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time. A time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process is also determined. The time-dependent temperature differential at any given time is determined based on control of a flux of the plasma constituent directed toward the substrate at the given time. The time-dependent substrate temperature and time-dependent temperature differential are stored in a digital format suitable for use by a temperature control device defined and connected to direct temperature control of the upper plasma boundary and the substrate. A system is also provided for implementing upper plasma boundary and substrate temperature control during the plasma process.

An etching tool that includes an interior chamber is provided. A plurality of type III-V semiconductor wafers is provided. A process cycle is performed for each one of the type III-V semiconductor wafers in the plurality. The process cycle includes performing a preliminary contamination control process. The process cycle further includes inserting one of the type III-V semiconductor wafers into the interior chamber. The process cycle further includes etching type III-V semiconductor material away from the type III-V semiconductor wafer that is present in the interior chamber. The process cycle further includes removing the type III-V semiconductor wafer that is present in the interior chamber. The preliminary contamination control process includes forming a carbon containing protective material that completely covers exposed surfaces of the interior chamber.

A method for operation of an electronic device and an electronic device are provided. The method includes determining if an object is detected at a first terminal and a second terminal among a plurality of terminals of an ear jack. If the object is detected, the impedance of the second terminal is calculated, and a type of the object is determined according to the calculated impedance.

A method for operation of an electronic device and an electronic device are provided. The method includes determining if an object is detected at a first terminal and a second terminal among a plurality of terminals of an ear jack. If the object is detected, the impedance of the second terminal is calculated, and a type of the object is determined according to the calculated impedance.

Described is a method for determining an endpoint of an etch process using optical emission spectroscopy (OES) data as an input. Optical emission spectroscopy (OES) data are acquired by a spectrometer attached to a plasma etch processing tool. The acquired time-evolving spectral data are first filtered and demeaned, and thereafter transformed into transformed spectral data, or trends, using multivariate analysis such as principal components analysis, in which previously calculated principal component weights are used to accomplish the transform. A functional form incorporating multiple trends may be used to more precisely determine the endpoint of an etch process. A method for calculating principal component weights prior to actual etching, based on OES data collected from previous etch processing, is disclosed, which method facilitates rapid calculation of trends and functional forms involving multiple trends, for efficient and accurate in-line determination of etch process endpoint.

Methods and systems for controlling processing state of a plasma reactor to initiate processing of production substrates and/or to determine a ready state of a reactor after the reactor has been cleaned and needs to be seasoned for subsequent production wafer processing are provided. The method initiate processing of a substrate in the plasma reactor using settings for tuning knobs of the plasma reactor that are approximated to achieve desired processing state values. A plurality of data streams are received from the plasma reactor during the processing of the substrate. The plurality of data streams are used to identify current processing state values. The method includes generating a compensation vector that identifies differences between the current processing state values and the desired processing state values. The generation of the compensation vector uses machine learning to improve and refile the identification and amount of compensation needed, as identified in the compensation vector. The method further includes transforming the compensation vector into adjustments to the settings for the tuning knobs and then applying the adjustment to the tuning knobs of the plasma reactor.

Techniques herein provide a chamber and substrate cleaning solution for etching and removing byproducts between separate etching steps. Such techniques include using a cleaning step based on fluorine chemistry, which is executed in between separate etch steps or divided etch steps. Such a technique can be executed in situ for improved efficiency. Other benefits include increasing etching depth/aspect ratios, and preventing post-etching defects including physical contact with neighboring gates, etc. Techniques herein are especially beneficial when applied to relatively small feature openings.

An ionization gauge to measure pressure, while controlling the location of deposits resulting from sputtering when operating at high pressure, includes at least one electron source that emits electrons, and an anode that defines an ionization volume. The ionization gauge also includes a collector electrode that collects ions formed by collisions between the electrons and gas molecules and atoms in the ionization volume, to provide a gas pressure output. The electron source can be positioned at an end of the ionization volume, such that the exposure of the electron source to atom flux sputtered off the collector electrode and envelope surface is minimized. Alternatively, the ionization gauge can include a first shade outside of the ionization volume, the first shade being located between the electron source and the collector electrode, and, optionally, a second shade between the envelope and the electron source, such that atoms sputtered off the envelope are inhibited from depositing on the electron source.

An ionization gauge to measure pressure, while controlling the location of deposits resulting from sputtering when operating at high pressure, includes at least one electron source that emits electrons, and an anode that defines an ionization volume. The ionization gauge also includes a collector electrode that collects ions formed by collisions between the electrons and gas molecules and atoms in the ionization volume, to provide a gas pressure output. The electron source can be positioned at an end of the ionization volume, such that the exposure of the electron source to atom flux sputtered off the collector electrode and envelope surface is minimized. Alternatively, the ionization gauge can include a first shade outside of the ionization volume, the first shade being located between the electron source and the collector electrode, and, optionally, a second shade between the envelope and the electron source, such that atoms sputtered off the envelope are inhibited from depositing on the electron source.

Chamber (11, 12, 13) for bounding a plasma generation area (42) in a vacuum pressure sensor (40), wherein the chamber comprises an electrically conductive casing element (1, 1, 1) located radially on the outside relative to a central axis, wherein the chamber comprises electrically conductive wall elements (2, 2, 2) arranged substantially perpendicular to the central axis and connected to the casing element, wherein at least one of the wall elements has a first opening (3), through which the central axis extends, wherein the casing element comprises at least a first (B1) and a second region (B2), wherein the first region is located closer to the central axis than the second region. The invention further relates to a vacuum pressure sensor comprising the chamber.