G01L21/30

Chamber for an ionization vacuum gauge

Chamber (11, 12, 13) for bounding a plasma generation area (42) in a vacuum pressure sensor (40), wherein the chamber comprises an electrically conductive casing element (1, 1, 1) located radially on the outside relative to a central axis, wherein the chamber comprises electrically conductive wall elements (2, 2, 2) arranged substantially perpendicular to the central axis and connected to the casing element, wherein at least one of the wall elements has a first opening (3), through which the central axis extends, wherein the casing element comprises at least a first (B1) and a second region (B2), wherein the first region is located closer to the central axis than the second region. The invention further relates to a vacuum pressure sensor comprising the chamber.

Methods for manufacturing semiconductor device and for detecting end point of dry etching

A via hole is accurately formed in an interlayer insulating film over a metal wiring. Of emission spectra of plasma to be used for dry etching of the interlayer insulating film, the emission intensities of at least CO, CN, and AlF are monitored such that an end point of the dry etching of the interlayer insulating film is detected based on the emission intensities thereof.

Apparatus and method for preventing malfunction in an electronic device

A method for operation of an electronic device and an electronic device are provided. The method includes determining if an object is detected at a first terminal and a second terminal among a plurality of terminals of an ear jack. If the object is detected, the impedance of the second terminal is calculated, and a type of the object is determined according to the calculated impedance.

Apparatus and method for preventing malfunction in an electronic device

A method for operation of an electronic device and an electronic device are provided. The method includes determining if an object is detected at a first terminal and a second terminal among a plurality of terminals of an ear jack. If the object is detected, the impedance of the second terminal is calculated, and a type of the object is determined according to the calculated impedance.

Ionization pressure gauge with bias voltage and emission current control and measurement
09927317 · 2018-03-27 · ·

Devices and corresponding methods are provided to operate a hot cathode ionization pressure gauge (HCIG). A transistor circuit can be configured to pass the electron emission current with low input impedance and to control cathode bias voltage. Emission current and cathode bias voltage can be controlled independently of each other, without a servo settling time. HCIGs can be calibrated with respect to leakage current.

Ionization pressure gauge with bias voltage and emission current control and measurement
09927317 · 2018-03-27 · ·

Devices and corresponding methods are provided to operate a hot cathode ionization pressure gauge (HCIG). A transistor circuit can be configured to pass the electron emission current with low input impedance and to control cathode bias voltage. Emission current and cathode bias voltage can be controlled independently of each other, without a servo settling time. HCIGs can be calibrated with respect to leakage current.

DEVICE FOR DETECTING FAULTS IN RAILS BY MEASURING IMPEDANCE

An electrical detection device carried by a rail vehicle traveling on a railway track to detect faults in at least one rail, including a contact support suitable for being mechanically linked to the rail vehicle, at least one reference contact and corresponding measuring contact applied to a rail, and carried by the support, a processing circuit to which each reference contact and measuring contact are connected, suitable for measuring the impedance between the corresponding reference and measuring contacts, means for positioning the contact support facing the surface of the rail in a measurement direction corresponding to the axis of the rail, such that each first reference contact and each corresponding measuring contact relate to the same rail, and at least two measuring contacts transversely offset relative to the measurement direction, wherein the processing circuit includes means for measuring the impedance between at least one reference contact and each measuring contact.

VACUUM PRESSURE GAUGE
20170307459 · 2017-10-26 ·

A vacuum pressure gauge is described herein. One apparatus includes an ion trap configured to trap antimatter therein in a vacuum chamber, and a controller configured to determine a lifetime of the antimatter trapped in the ion trap and determine a pressure in the vacuum chamber based, at least in part, on the determined lifetime of the antimatter.

VACUUM PRESSURE GAUGE
20170307459 · 2017-10-26 ·

A vacuum pressure gauge is described herein. One apparatus includes an ion trap configured to trap antimatter therein in a vacuum chamber, and a controller configured to determine a lifetime of the antimatter trapped in the ion trap and determine a pressure in the vacuum chamber based, at least in part, on the determined lifetime of the antimatter.

CHAMBER FOR AN IONIZATION VACUUM GAUGE

A chamber, for bounding a plasma generation area in a vacuum pressure sensor, includes an electrically conductive casing element located radially on an outside relative to a central axis. The chamber includes electrically conductive wall elements arranged substantially perpendicular to the central axis and connected to the electrically conductive casing element. At least one of the wall elements has a first opening, through which the central axis extends. The electrically conductive casing element comprises at least a first and a second region. The first region is located closer to the central axis than the second region. The electrically conductive casing element is conical at least in part.