A system of measuring an image of a pattern in a high NA scanning-type extreme ultra-violet (EUV) mask is disclosed. The system may include a light source generating an EUV light; an toroidal mirror; an flat mirror allowing light, which is reflected by the toroidal mirror, to be incident into the mask; an beam splitter; a light detection part; an anamorphic zone-plate lens focusing a transmitted portion of a light emitted from the beam splitter on the mask; a stage; and an anamorphic photo sensor, which is configured to measure an energy of a reflected portion of the coherent EUV light, is composed of a detector array, and has different sizes from each other in horizontal and vertical directions of an incidence surface of the detector array.

A system of measuring an image of a pattern in a high NA scanning-type extreme ultra-violet (EUV) mask is disclosed. The system may include a light source generating an EUV light; an toroidal mirror; an flat mirror allowing light, which is reflected by the toroidal mirror, to be incident into the mask; an beam splitter; a light detection part; an anamorphic zone-plate lens focusing a transmitted portion of a light emitted from the beam splitter on the mask; a stage; and an anamorphic photo sensor, which is configured to measure an energy of a reflected portion of the coherent EUV light, is composed of a detector array, and has different sizes from each other in horizontal and vertical directions of an incidence surface of the detector array.

A magnetic material observation method in accordance with the present invention includes: an irradiating step including irradiating a region of a sample with an excitation beam and thereby allowing a magnetic element contained in the sample to radiate a characteristic X-ray; a detecting step including detecting intensities of a right-handed circularly polarized component and a left-handed circularly polarized component contained in the characteristic X-ray; and a calculating step including calculating the difference between the intensity of the right-handed circularly polarized component and the intensity of the left-handed circularly polarized component. Reference to such a difference enables precise measurement of the direction or magnitude of magnetization without strict limitations as to the sample.

The invention relates to a method of examining a sample using a charged particle microscope, comprising the steps of providing a charged particle beam, as well as a sample; scanning said charged particle beam over said sample; and detecting, using a first detector, emissions of a first type from the sample in response to the beam scanned over the sample. Spectral information of detected emissions of the first type is used for assigning a plurality of mutually different phases to said sample. In a further step, a corresponding plurality of different color hues—with reference to an HSV color space—are associated to said plurality of mutually different phases. Using a second detector, emissions of a second type from the sample in response to the beam scanned over the sample are detected. Finally an image representation of said sample is provided.

A semiconductor review tool receives absolute Z-height values for the semiconductor wafer, such as a semiconductor wafer with a beveled edge. The absolute Z-height values can be determined by a semiconductor inspection tool. The semiconductor review tool reviews the semiconductor wafer within a Z-height based on the absolute Z-height values. Focus can be adjusted to within the Z-height.

A semiconductor review tool receives absolute Z-height values for the semiconductor wafer, such as a semiconductor wafer with a beveled edge. The absolute Z-height values can be determined by a semiconductor inspection tool. The semiconductor review tool reviews the semiconductor wafer within a Z-height based on the absolute Z-height values. Focus can be adjusted to within the Z-height.

A computer-based method for three-dimensional surface metrology of samples based on scanning electron microscopy and atomic force microscopy. The method includes: (i) using a scanning electron microscope (SEM) to obtain SEM data of a set of sites on a surface of a sample; (ii) using an atomic force microscope (AFM) to measure vertical parameters of sites in a calibration subset of the set; (iii) calibrating an algorithm, configured to estimate a vertical parameter of a site when SEM data of the site are fed as inputs, by determining free parameters of the algorithm, such that residuals between the algorithm-estimated vertical parameters and the AFM-measured vertical parameters are about minimized; and (iv) using the calibrated algorithm to estimate vertical parameters of the sites in the complement to the calibration subset.

The present disclosure provides a wafer sample analysis method and device. The method is applied to a secondary-ion-mass spectroscope (Sims) and includes: providing a wafer sample, the wafer sample at least including a slope configured to expose a substrate, a first protective layer and a first doped layer on a same surface, the first protective layer being formed on the substrate, and the first doped layer being formed on the first protective layer; and acquiring and analyzing a slope image of the slope to obtain a doping depth and a doping concentration of elements in the wafer sample in the slope image.

The present invention provides a method of deterioration analysis that enables detailed analysis of the deterioration, especially of the surface, of a polymer material containing at least two diene polymers. The present invention relates to a method of deterioration analysis including: irradiating a polymer material containing at least two diene polymers with high intensity x-rays; and measuring x-ray absorption while varying the energy of the x-rays, to analyze the deterioration of each diene polymer.

A method of X-ray analysis measures X-ray diffraction in transmission. In order to carry out quantitative measurements, a background measurement is taken slightly away from the diffraction peak and the ratio of measured intensities used to correct for variations in sample composition.