Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

An X-ray thin film inspection device of the present invention includes an X-ray irradiation unit 40 installed on a first rotation arm 32, an X-ray detector 50 installed on a second rotation arm 33, and a fluorescence X-ray detector 60 for detecting fluorescence X-rays generated from an inspection target upon irradiation of X-rays. The X-ray irradiation unit 40 includes an X-ray optical element 43 comprising a confocal mirror for receiving X-rays radiated from an X-ray tube 42, reflects plural focused X-ray beams monochromatized at a specific wavelength and focuses the plural focused X-ray beams to a preset focal point, and a slit mechanism 46 for passing therethrough any number of focused X-ray beams out of the plural focused X-ray beams reflected from the X-ray optical element 43.

The system for determining and imaging wax deposition and corrosion in pipelines relate to systems for determining wax deposition and corrosion by one or both of two techniques. In both techniques, a source of neutron radiation is directed at the pipeline. In one technique, a neutron detector surrounded by an absorption shield defining a collimation window counts neutrons reflected back to the detector by back diffusion or backscatter radiation. In the other technique, a gamma ray detector measures gamma rays emitted when the emitted neutrons are absorbed in the pipeline. A neutron moderator-reflector is placed around three sides of the pipeline to increase the likelihood of neutron capture. A gamma detector surrounded by a gamma absorption shield defining a collimation window counts neutron capture gamma rays. An energy window can be taken for selection of Fe and H gamma rays for high precision imaging.

The system for determining and imaging wax deposition and corrosion in pipelines relate to systems for determining wax deposition and corrosion by one or both of two techniques. In both techniques, a source of neutron radiation is directed at the pipeline. In one technique, a neutron detector surrounded by an absorption shield defining a collimation window counts neutrons reflected back to the detector by back diffusion or backscatter radiation. In the other technique, a gamma ray detector measures gamma rays emitted when the emitted neutrons are absorbed in the pipeline. A neutron moderator-reflector is placed around three sides of the pipeline to increase the likelihood of neutron capture. A gamma detector surrounded by a gamma absorption shield defining a collimation window counts neutron capture gamma rays. An energy window can be taken for selection of Fe and H gamma rays for high precision imaging.

An object of the invention is to quantitatively evaluate crystal growth amount in a wide range from an undergrowth state to an overgrowth state with nondestructive inspection. By using a plenty of image feature values such as pattern brightness, a pattern area and a pattern shape which are extracted from an SEM image, and depending on whether brightness inside a pattern is lower than brightness outside the pattern (401), undergrowth and overgrowth is determined (402, 405). Based on a brightness difference or the pattern area, a growth amount index or a normality index of crystal growth in a concave pattern such as a hole pattern or a trench pattern is calculated (404, 407).

An object of the invention is to quantitatively evaluate crystal growth amount in a wide range from an undergrowth state to an overgrowth state with nondestructive inspection. By using a plenty of image feature values such as pattern brightness, a pattern area and a pattern shape which are extracted from an SEM image, and depending on whether brightness inside a pattern is lower than brightness outside the pattern (401), undergrowth and overgrowth is determined (402, 405). Based on a brightness difference or the pattern area, a growth amount index or a normality index of crystal growth in a concave pattern such as a hole pattern or a trench pattern is calculated (404, 407).

The present disclosure is directed to systems and methods for real-time control of a charged particle pencil beam system during therapeutic treatment of a patient. In an aspect, the present disclosure is directed to measuring an actual shape, an actual intensity distribution, and an actual location at isocenter of the charged particle pencil beam. The actual data is compared to model treatment data in real time to determine if a statistically significant variance occurs in which case the charged particle pencil beam can be stopped mid-treatment for correction and/or analysis.

The method and device to ensure a safety of people's life and health is based on measurements of spontaneous electromagnetic radiation caused by a deformation from a structure or device, a nucleation and growth of plant cells and living organisms; calculating an energy stored in a portion of the structure or cells based on a measured intensity; performing a comparison of the energy stored with a critical value for the structure and pathological changes in the cells; and indicate a potential failure of the structure or a level of pathological changes based on the performed comparison.

The method and device to ensure a safety of people's life and health is based on measurements of spontaneous electromagnetic radiation caused by a deformation from a structure or device, a nucleation and growth of plant cells and living organisms; calculating an energy stored in a portion of the structure or cells based on a measured intensity; performing a comparison of the energy stored with a critical value for the structure and pathological changes in the cells; and indicate a potential failure of the structure or a level of pathological changes based on the performed comparison.

The objective of the present invention is to maintain the surrounding of a sample at atmospheric pressure and efficiently detect secondary electrons. In a sample chamber of a charged particle device, a sample holder (4) has: a gas introduction pipe and a gas evacuation pipe for controlling the vicinity of a sample (20) to be an atmospheric pressure environment; a charged particle passage hole (18) and a micro-orifice (18) enabling detection of secondary electrons (15) emitted from the sample (20), co-located above the sample (20); and a charged particle passage hole (19) with a hole diameter larger than the micro-orifice (18) above the sample (20) so as to be capable of actively evacuating gas during gas introduction.