A modular AFM/SPM which provides faster measurements, in part through the use of smaller probes, of smaller forces and movements, free of noise artifacts, that the old generations of these devices have increasingly been unable to provide. The modular AFM/SPM includes a chassis, the foundation on which the modules of the instrument are supported; a view module providing the optics for viewing the sample and the probe; a head module providing the components for the optical lever arrangement and for steering and focusing those components; a scanner module providing the XYZ translation stage that actuates the sample in those dimensions and the engage mechanism; a isolation module that encloses the chassis and provides acoustic and/or thermal isolation for the instrument and an electronics module which, together with the separate controller, provide the electronics for acquiring and processing images and controlling the other functions of the instrument. All these modules and many of their subassemblies are replaceable and potentially upgradeable. This allows updating to new technology as it becomes available.

A method and device for measuring dimension of a semiconductor structure are provided. A probe of an Atomic Force Microscope (AFM) is controlled at first to move a first distance from a preset reference position to a top surface of a semiconductor structure to be measured in a direction perpendicular to the top surface of the semiconductor structure to be measured, then the probe is controlled to scan the surface of the semiconductor structure to be measured while keeping the first distance in a direction parallel to the top surface of the semiconductor structure to be measured, amplitudes of the probe at respective scanning points on the surface of the semiconductor structure to be measured are detected, and a Critical Dimension (CD) of the semiconductor structure to be measured is determined according to the amplitudes of the probe at respective scanning points on the surface of the semiconductor structure.

A method and device for measuring dimension of a semiconductor structure are provided. A probe of an Atomic Force Microscope (AFM) is controlled at first to move a first distance from a preset reference position to a top surface of a semiconductor structure to be measured in a direction perpendicular to the top surface of the semiconductor structure to be measured, then the probe is controlled to scan the surface of the semiconductor structure to be measured while keeping the first distance in a direction parallel to the top surface of the semiconductor structure to be measured, amplitudes of the probe at respective scanning points on the surface of the semiconductor structure to be measured are detected, and a Critical Dimension (CD) of the semiconductor structure to be measured is determined according to the amplitudes of the probe at respective scanning points on the surface of the semiconductor structure.

The present application relates to an apparatus for a scanning probe microscope, said apparatus having: (a) at least one first measuring probe having at least one first cantilever, the free end of which has a first measuring tip; (b) at least one first reflective area arranged in the region of the free end of the at least one first cantilever and embodied to reflect at least two light beams in different directions; and (c) at least two first interferometers embodied to use the at least two light beams reflected by the at least one first reflective area to determine the position of the first measuring tip.

A surface analysis device (1) is provided with a sample stage (30) for placing a sample thereon, a cantilever to be arranged to face the sample stage (30), and a cantilever drive unit for driving the cantilever. The drive mechanism is configured, when taking out the sample stage (30), to shift the sample stage (30) relative to a measurement unit (20) so that the measurement unit (20) and the sample stage (30) separate from each other in a first direction in which the cantilever and the sample stage (30) face each other, and then slidably move the stage (30) in a direction intersecting with the first direction.

A surface analysis device (1) is provided with a sample stage (30) for placing a sample thereon, a cantilever to be arranged to face the sample stage (30), and a cantilever drive unit for driving the cantilever. The drive mechanism is configured, when taking out the sample stage (30), to shift the sample stage (30) relative to a measurement unit (20) so that the measurement unit (20) and the sample stage (30) separate from each other in a first direction in which the cantilever and the sample stage (30) face each other, and then slidably move the stage (30) in a direction intersecting with the first direction.

An apparatus, including: a scanning probe microscope head with a frame configured to fit within an insert of a cryostat, and a scanner, a probe and a sample holder all disposed within the frame; and a coarse motor assembly disposed within the frame and comprising: a positionable component; and coarse motors. The coarse motors are configured to move the positionable component relative to the frame along an X axis, a Y axis, and a Z axis. The apparatus further includes a universal electrical base connection with half of a plug/socket arrangement. The plug/socket arrangement is configured to provide electrical communication between the scanning probe microscope head and a base which has a second half of the plug/socket arrangement when the scanning probe microscope head is lowered onto the base.

An apparatus, including: a scanning probe microscope head with a frame configured to fit within an insert of a cryostat, and a scanner, a probe and a sample holder all disposed within the frame; and a coarse motor assembly disposed within the frame and comprising: a positionable component; and coarse motors. The coarse motors are configured to move the positionable component relative to the frame along an X axis, a Y axis, and a Z axis. The apparatus further includes a universal electrical base connection with half of a plug/socket arrangement. The plug/socket arrangement is configured to provide electrical communication between the scanning probe microscope head and a base which has a second half of the plug/socket arrangement when the scanning probe microscope head is lowered onto the base.

A nano-positioning system for fine and coarse nano-positioning including at least one actuator, wherein the at least one actuator includes a high Curie temperature material and wherein the nano-positioning system is configured to apply a voltage to the at least one actuator to generate fine and/or coarse motion by the at least one actuator. The nano-positioning system being a stand-alone system, a scanning probe microscope, or an attachment to an existing microscope configured to perform a method of creepless nano-positioning that includes positioning a probe relative to a first area of a substrate using coarse stepping and interacting with the first area of the substrate using fine motion after less than 60 seconds of the positioning the probe. The movement of the scanning probe microscope is actuated by a high Curie temperature piezoelectric material that limits and/or eliminates creep, hysteresis and aging.

A nano-positioning system for fine and coarse nano-positioning including at least one actuator, wherein the at least one actuator includes a high Curie temperature material and wherein the nano-positioning system is configured to apply a voltage to the at least one actuator to generate fine and/or coarse motion by the at least one actuator. The nano-positioning system being a stand-alone system, a scanning probe microscope, or an attachment to an existing microscope configured to perform a method of creepless nano-positioning that includes positioning a probe relative to a first area of a substrate using coarse stepping and interacting with the first area of the substrate using fine motion after less than 60 seconds of the positioning the probe. The movement of the scanning probe microscope is actuated by a high Curie temperature piezoelectric material that limits and/or eliminates creep, hysteresis and aging.