Patent classifications
G01Q30/02
SYSTEM AND METHOD FOR GENERATING AND ANALYZING ROUGHNESS MEASUREMENTS
In one embodiment, a method for detecting edge positions in a pattern structure is disclosed. The method includes detecting the edge positions of features within the pattern structure of an image without filtering the image, wherein the detecting is performed by: applying a model to a single linescan, adjusting, based on the single linescan, one or more parameters of the model, obtaining, using the one or more adjusted parameters, a best fit of the model to the single linescan.
SYSTEM FOR MEASURING THE ABSORPTION OF A LASER EMISSION BY A SAMPLE
A system for measuring the absorption of a laser radiation by a sample is provided. The system comprises: •(i) a pulsed laser source, suitable for emitting pulses at a repetition frequency f.sub.1 and arranged so as to illuminate the sample; •(ii) an AFM probe arranged so as to be able to be placed in contact with the region of the surface of the sample on one side, the AFM probe having a mechanical resonance mode at a frequency f.sub.m; and •(iii) a detector configured to measure the amplitude of the oscillations of the AFM probe resulting from the absorption of the laser radiation by the region of the surface of the sample, characterized in that it also comprises a translation system designed to displace the sample at a frequency f.sub.p.
SYSTEM FOR MEASURING THE ABSORPTION OF A LASER EMISSION BY A SAMPLE
A system for measuring the absorption of a laser radiation by a sample is provided. The system comprises: •(i) a pulsed laser source, suitable for emitting pulses at a repetition frequency f.sub.1 and arranged so as to illuminate the sample; •(ii) an AFM probe arranged so as to be able to be placed in contact with the region of the surface of the sample on one side, the AFM probe having a mechanical resonance mode at a frequency f.sub.m; and •(iii) a detector configured to measure the amplitude of the oscillations of the AFM probe resulting from the absorption of the laser radiation by the region of the surface of the sample, characterized in that it also comprises a translation system designed to displace the sample at a frequency f.sub.p.
OPTICAL OUTPUT SYSTEM, MEASUREMENT SYSTEM, OPTICAL PUMP-PROBE SCANNING TUNNELING MICROSCOPE SYSTEM, COMPUTING DEVICE, PROGRAM, AND COMPUTING METHOD
An optical output system includes: a first laser that outputs first light which is a pulse laser in response to input of a first signal; a second laser that outputs second light which is a pulse laser in response to input of a second signal; and an arithmetic unit that inputs the first signal and the second signal to the first laser and the second laser, wherein the arithmetic unit repeatedly inputs the first signal and the second signal with switching a variable delay value, which is a difference between a timing to input the first signal to the first laser and a timing to input the second signal to the second laser, in a plurality of ways.
OPTICAL OUTPUT SYSTEM, MEASUREMENT SYSTEM, OPTICAL PUMP-PROBE SCANNING TUNNELING MICROSCOPE SYSTEM, COMPUTING DEVICE, PROGRAM, AND COMPUTING METHOD
An optical output system includes: a first laser that outputs first light which is a pulse laser in response to input of a first signal; a second laser that outputs second light which is a pulse laser in response to input of a second signal; and an arithmetic unit that inputs the first signal and the second signal to the first laser and the second laser, wherein the arithmetic unit repeatedly inputs the first signal and the second signal with switching a variable delay value, which is a difference between a timing to input the first signal to the first laser and a timing to input the second signal to the second laser, in a plurality of ways.
Method for measuring damage of a substrate caused by an electron beam
A method for measuring damage (D) of a substrate (1) caused by an electron beam (2). The method comprises using an atomic force microscope (AFM) to provide a measurement (S2) of mechanical and/or chemical material properties (P2) of the substrate (1) at an exposure area (1a) of the electron beam (2). The method further comprises calculating a damage parameter (Sd) indicative for the damage (D) based on the measurement (S2) of the material properties (P2) at the exposure area (1a).
Atomic force microscope equipped with optical measurement device and method of acquiring information on surface of measurement target using the same
An atomic force microscope equipped with an optical measurement device is disclosed. An atomic force microscope equipped with an optical measurement device which acquires characteristics of a surface of a measurement target by moving a probe along the surface of the measurement target while scanning the measurement target on an XY plane using an XY scanner for supporting the measurement target, includes: an optical measurement device including a lighting unit configured to allow light to enter the surface of the measurement target, and a detection unit configured to detect light reflected by the surface of the measurement target, the optical measurement device being configured to acquire the characteristics of the surface of the measurement target by the scanning by the XY scanner; and a control device configured to control an operation of the atomic force microscope and an operation of the optical measurement device.
Atomic force microscope equipped with optical measurement device and method of acquiring information on surface of measurement target using the same
An atomic force microscope equipped with an optical measurement device is disclosed. An atomic force microscope equipped with an optical measurement device which acquires characteristics of a surface of a measurement target by moving a probe along the surface of the measurement target while scanning the measurement target on an XY plane using an XY scanner for supporting the measurement target, includes: an optical measurement device including a lighting unit configured to allow light to enter the surface of the measurement target, and a detection unit configured to detect light reflected by the surface of the measurement target, the optical measurement device being configured to acquire the characteristics of the surface of the measurement target by the scanning by the XY scanner; and a control device configured to control an operation of the atomic force microscope and an operation of the optical measurement device.
SYSTEM AND METHOD FOR DETERMINING AND/OR PREDICTING UNBIASED PARAMETERS ASSOCIATED WITH SEMICONDUCTOR MEASUREMENTS
In one embodiment, a method includes determining, by a processor, a measurement of edge detection noise; receiving a measurement of a biased parameter including measurement noise; based on the measurement of edge detection noise and a number of measurement points, determining a contribution of edge detection noise to the biased parameter; determining an unbiased parameter by subtracting the contribution of noise from the biased parameter including the measurement noise; and outputting the unbiased parameter.
SYSTEM AND METHOD FOR DETERMINING AND/OR PREDICTING UNBIASED PARAMETERS ASSOCIATED WITH SEMICONDUCTOR MEASUREMENTS
In one embodiment, a method includes determining, by a processor, a measurement of edge detection noise; receiving a measurement of a biased parameter including measurement noise; based on the measurement of edge detection noise and a number of measurement points, determining a contribution of edge detection noise to the biased parameter; determining an unbiased parameter by subtracting the contribution of noise from the biased parameter including the measurement noise; and outputting the unbiased parameter.