G01Q30/04

Method for providing a probe device for scanning probe microscopy
11480588 · 2022-10-25 · ·

The invention relates to a method for providing a probe device for scanning probe microscopy, in particular for atomic force microscopy, wherein a scanning probe microscope is used for measuring a sample by means of a tip which is arranged on a cantilever of the probe device and which has a tip geometry. According to the invention, in a step upstream of the manufacturing process producing the tip, the tip geometry is optimized based on a selected tip basic form with regard to defined, required measurement properties, by computer simulating and evaluating the tip geometry, and modifying the tip geometry according to the evaluation with regard to these measurement properties. The invention further relates to a probe device for scanning probe microscopy, in particular for atomic force microscopy, having a cantilever and a tip formed on the cantilever in the nanometer range, with which samples to be measured can be scanned.

Method for providing a probe device for scanning probe microscopy
11480588 · 2022-10-25 · ·

The invention relates to a method for providing a probe device for scanning probe microscopy, in particular for atomic force microscopy, wherein a scanning probe microscope is used for measuring a sample by means of a tip which is arranged on a cantilever of the probe device and which has a tip geometry. According to the invention, in a step upstream of the manufacturing process producing the tip, the tip geometry is optimized based on a selected tip basic form with regard to defined, required measurement properties, by computer simulating and evaluating the tip geometry, and modifying the tip geometry according to the evaluation with regard to these measurement properties. The invention further relates to a probe device for scanning probe microscopy, in particular for atomic force microscopy, having a cantilever and a tip formed on the cantilever in the nanometer range, with which samples to be measured can be scanned.

Nanoscale dynamic mechanical analysis via atomic force microscopy (AFM-nDMA)

An atomic-force-microscope-based apparatus and method including hardware and software, configured to collect, in a dynamic fashion, and analyze data representing mechanical properties of soft materials on a nanoscale, to map viscoelastic properties of a soft-material sample. The use of the apparatus as an addition to the existing atomic-force microscope device.

Nanoscale dynamic mechanical analysis via atomic force microscopy (AFM-nDMA)

An atomic-force-microscope-based apparatus and method including hardware and software, configured to collect, in a dynamic fashion, and analyze data representing mechanical properties of soft materials on a nanoscale, to map viscoelastic properties of a soft-material sample. The use of the apparatus as an addition to the existing atomic-force microscope device.

Device and method for operating a bending beam in a closed control loop
11630124 · 2023-04-18 · ·

The present invention relates to a device for operating at least one bending beam in at least one closed control loop, wherein the device has: (a) at least one first interface designed to receive at least one controlled variable of the at least one control loop; (b) at least one programmable logic circuit designed to process a control error of the at least one control loop using a bit depth greater than the bit depth of the controlled variable; and (c) at least one second interface designed to provide a manipulated variable of the at least one control loop.

Device and method for operating a bending beam in a closed control loop
11630124 · 2023-04-18 · ·

The present invention relates to a device for operating at least one bending beam in at least one closed control loop, wherein the device has: (a) at least one first interface designed to receive at least one controlled variable of the at least one control loop; (b) at least one programmable logic circuit designed to process a control error of the at least one control loop using a bit depth greater than the bit depth of the controlled variable; and (c) at least one second interface designed to provide a manipulated variable of the at least one control loop.

Three-dimensional surface metrology of wafers

A computer-based method for three-dimensional surface metrology of samples based on scanning electron microscopy and atomic force microscopy. The method includes: (i) using a scanning electron microscope (SEM) to obtain SEM data of a set of sites on a surface of a sample; (ii) using an atomic force microscope (AFM) to measure vertical parameters of sites in a calibration subset of the set; (iii) calibrating an algorithm, configured to estimate a vertical parameter of a site when SEM data of the site are fed as inputs, by determining free parameters of the algorithm, such that residuals between the algorithm-estimated vertical parameters and the AFM-measured vertical parameters are about minimized; and (iv) using the calibrated algorithm to estimate vertical parameters of the sites in the complement to the calibration subset.

METHOD OF DETERMINING DIMENSIONS OF FEATURES OF A SUBSURFACE TOPOGRAPHY, SCANNING PROBE MICROSCOPY SYSTEM AND COMPUTER PROGRAM
20230143659 · 2023-05-11 ·

The present document relates to a method to determine dimensions of features of a subsurface topography of a sample, the features having a spatial periodicity. The subsurface topography is obtained using scanning probe microscopy. The method includes obtaining measurement values of an acoustic output signal in at least N locations and generating a location dependent subsurface topography signal. The method further comprises providing an autocorrelation matrix by performing a cross-correlation of the subsurface topography signal in respect of each further location to yield the autocorrelation matrix having size N*N. Thereafter, the method includes performing an Eigenvalue decomposition for obtaining Eigenvalues of the matrix, and selecting a subset of Eigenvalues having the largest values. From these a frequency estimation function is constructed and at least one output value indicative of the spatial periodicity is obtained therefrom. The document also describes a scanning probe microscopy system and a computer program product.

METHOD OF DETERMINING DIMENSIONS OF FEATURES OF A SUBSURFACE TOPOGRAPHY, SCANNING PROBE MICROSCOPY SYSTEM AND COMPUTER PROGRAM
20230143659 · 2023-05-11 ·

The present document relates to a method to determine dimensions of features of a subsurface topography of a sample, the features having a spatial periodicity. The subsurface topography is obtained using scanning probe microscopy. The method includes obtaining measurement values of an acoustic output signal in at least N locations and generating a location dependent subsurface topography signal. The method further comprises providing an autocorrelation matrix by performing a cross-correlation of the subsurface topography signal in respect of each further location to yield the autocorrelation matrix having size N*N. Thereafter, the method includes performing an Eigenvalue decomposition for obtaining Eigenvalues of the matrix, and selecting a subset of Eigenvalues having the largest values. From these a frequency estimation function is constructed and at least one output value indicative of the spatial periodicity is obtained therefrom. The document also describes a scanning probe microscopy system and a computer program product.

Method and device for measuring dimension of semiconductor structure
11656245 · 2023-05-23 · ·

A method and device for measuring dimension of a semiconductor structure are provided. A probe of an Atomic Force Microscope (AFM) is controlled at first to move a first distance from a preset reference position to a top surface of a semiconductor structure to be measured in a direction perpendicular to the top surface of the semiconductor structure to be measured, then the probe is controlled to scan the surface of the semiconductor structure to be measured while keeping the first distance in a direction parallel to the top surface of the semiconductor structure to be measured, amplitudes of the probe at respective scanning points on the surface of the semiconductor structure to be measured are detected, and a Critical Dimension (CD) of the semiconductor structure to be measured is determined according to the amplitudes of the probe at respective scanning points on the surface of the semiconductor structure.