A scanning probe microscope includes: a pump light output unit that emits pump light having a first specified phase to a specimen and performs emission of the pump light a plurality of number of times to excite the specimen; a probe light output unit that emits probe light having a second specified phase to the specimen once while the specimen is excited by one-time emission of the pump light; and a scanning probe that detects, from the specimen, a probe signal corresponding to each one-time emission of the probe light, wherein the pump light output unit or the probe light output unit includes a delay time adjustment unit that adjusts delay time from a start of the emission of the pump light until a start of the emission of the probe light.

Various examples are provided related to scanning tunneling thermometers and scanning tunneling microscopy (STM) techniques. In one example, a method includes simultaneously measuring conductance and thermopower of a nanostructure by toggling between: applying a time modulated voltage to a nanostructure disposed on an interconnect structure, the time modulated voltage applied at a probe tip positioned over the nanostructure, while measuring a resulting current at a contact of the interconnect structure; and applying a time modulated temperature signal to the nanostructure at the probe tip, while measuring current through a calibrated thermoresistor in series with the probe tip. In another example, a device includes an interconnect structure with connections to a first reservoir and a second reservoir; and a scanning tunneling probe in contact with a probe reservoir. Electrical measurements are simultaneously obtained for temperature and voltage applied to a nanostructure between the reservoirs.

Various examples are provided related to scanning tunneling thermometers and scanning tunneling microscopy (STM) techniques. In one example, a method includes simultaneously measuring conductance and thermopower of a nanostructure by toggling between: applying a time modulated voltage to a nanostructure disposed on an interconnect structure, the time modulated voltage applied at a probe tip positioned over the nanostructure, while measuring a resulting current at a contact of the interconnect structure; and applying a time modulated temperature signal to the nanostructure at the probe tip, while measuring current through a calibrated thermoresistor in series with the probe tip. In another example, a device includes an interconnect structure with connections to a first reservoir and a second reservoir; and a scanning tunneling probe in contact with a probe reservoir. Electrical measurements are simultaneously obtained for temperature and voltage applied to a nanostructure between the reservoirs.

The present invention provides a method for moving and transferring nanowires using tapered hair of diameter in micron range. The nanowires have a diameter of 60-150 nm. The tapered hair has a diameter of 1-100 m, a tip curvature radius of 0.8-3 m and a length of 4-10 mm. A plastic film on a copper grid used for a TEM is removed, the copper grid is reserved, and holes have a diameter of 50-100 m. The copper grid after ultrasonic cleaning gains the nanowires from the acetone liquid with ultrasonic dispersed nanowires. The copper grid with distributed nanowires and the tapered hair are respectively placed on mobile platforms of two different optical microscopes. Millimeter movement and micron movement of the tapered hair are realized, thereby realizing movement and transfer operation for the nanowires. The tip of the tapered hair is dipped in a small drop of conductive silver epoxy, and the conductive silver epoxy is respectively dropped on both ends of the nanowires; and the radius of the dropped conductive silver epoxy is 4-8 m. The present invention realizes a method for moving and transferring nanowires using tapered hair through the mobile platforms of the two optical microscopes.

The present invention provides a method for moving and transferring nanowires using tapered hair of diameter in micron range. The nanowires have a diameter of 60-150 nm. The tapered hair has a diameter of 1-100 m, a tip curvature radius of 0.8-3 m and a length of 4-10 mm. A plastic film on a copper grid used for a TEM is removed, the copper grid is reserved, and holes have a diameter of 50-100 m. The copper grid after ultrasonic cleaning gains the nanowires from the acetone liquid with ultrasonic dispersed nanowires. The copper grid with distributed nanowires and the tapered hair are respectively placed on mobile platforms of two different optical microscopes. Millimeter movement and micron movement of the tapered hair are realized, thereby realizing movement and transfer operation for the nanowires. The tip of the tapered hair is dipped in a small drop of conductive silver epoxy, and the conductive silver epoxy is respectively dropped on both ends of the nanowires; and the radius of the dropped conductive silver epoxy is 4-8 m. The present invention realizes a method for moving and transferring nanowires using tapered hair through the mobile platforms of the two optical microscopes.

A method for the patterning and control of single electrons on a surface is provided that includes implementing scanning tunneling microscopy hydrogen lithography with a scanning probe microscope to form charge structures with one or more confined charges; performing a series of field-free atomic force microscopy measurements on the charge structures with different tip heights, where interaction between the tip and the confined charge are elucidated; and adjusting tip heights to controllably position charges within the structures to write a given charge state. The present disclose also provides a Gibb's distribution machine formed with the method for the patterning and control of single electrons on a surface. A multi bit true random number generator and neural network learning hardware formed with the above described method are also provided.

A method for the patterning and control of single electrons on a surface is provided that includes implementing scanning tunneling microscopy hydrogen lithography with a scanning probe microscope to form charge structures with one or more confined charges; performing a series of field-free atomic force microscopy measurements on the charge structures with different tip heights, where interaction between the tip and the confined charge are elucidated; and adjusting tip heights to controllably position charges within the structures to write a given charge state. The present disclose also provides a Gibb's distribution machine formed with the method for the patterning and control of single electrons on a surface. A multi bit true random number generator and neural network learning hardware formed with the above described method are also provided.

Methods, devices, and systems for forming atomically precise structures are provided. In some embodiments, the methods, devices, and systems of the present disclosure utilize a scanning tunneling microscope (STM) system to receive a sample having a surface to be patterned. The system positions a conductive tip over a pixel region of the surface. While the conductive tip remains laterally fixed relative to the surface, the system applies a bias voltage between the conductive tip and the surface such that a current between the conductive tip and the surface removes at least one atom from the pixel region. The system stops applying the voltage and current when it senses the removal of the at least one atom. The system then verifies that the at least one atom has been removed from the pixel region.

Methods, devices, and systems for forming atomically precise structures are provided. In some embodiments, the methods, devices, and systems of the present disclosure utilize a scanning tunneling microscope (STM) system to receive a sample having a surface to be patterned. The system positions a conductive tip over a pixel region of the surface. While the conductive tip remains laterally fixed relative to the surface, the system applies a bias voltage between the conductive tip and the surface such that a current between the conductive tip and the surface removes at least one atom from the pixel region. The system stops applying the voltage and current when it senses the removal of the at least one atom. The system then verifies that the at least one atom has been removed from the pixel region.

The present invention provides a method for moving and transferring nanowires using tapered hair of diameter in micron range. The nanowires have a diameter of 60-150 nm. The tapered hair has a diameter of 1-100 m, a tip curvature radius of 0.8-3 m and a length of 4-10 mm. A plastic film on a copper grid used for a TEM is removed, the copper grid is reserved, and holes have a diameter of 50-100 m. The copper grid after ultrasonic cleaning gains the nanowires from the acetone liquid with ultrasonic dispersed nanowires. The copper grid with distributed nanowires and the tapered hair are respectively placed on mobile platforms of two different optical microscopes. Millimeter movement and micron movement of the tapered hair are realized, thereby realizing movement and transfer operation for the nanowires. The tip of the tapered hair is dipped in a small drop of conductive silver epoxy, and the conductive silver epoxy is respectively dropped on both ends of the nanowires; and the radius of the dropped conductive silver epoxy is 4-8 m. The present invention realizes a method for moving and transferring nanowires using tapered hair through the mobile platforms of the two optical microscopes.