A method of examining a sample (1) in a microscope equipped with at least one scanning tunneling tip (4), wherein tunneling current TC can be detected and wherein relative tip-to-sample planar coordinates xrel=xtip?xsample and yrel=ytip?ysample are differences between corresponding tip and sample coordinates, wherein the following steps are performed above at least two surface points of the sample (1): placing the tip (4) successively above said surface points of the sample (1); above each of said surface points of the sample, performing a distance varying step (33) comprising varying the tip-to-sample distance D, and performing a time dependencies recording step (35), comprising recording time dependencies TC(t), xrel(t), yrel(t), D(t). Based on these time dependencies, four maps can be created from a single measurement: constant current map, constant height map, Local Density of States Topography map and potential barrier map.

A method of examining a sample (1) in a microscope equipped with at least one scanning tunneling tip (4), wherein tunneling current TC can be detected and wherein relative tip-to-sample planar coordinates xrel=xtip?xsample and yrel=ytip?ysample are differences between corresponding tip and sample coordinates, wherein the following steps are performed above at least two surface points of the sample (1): placing the tip (4) successively above said surface points of the sample (1); above each of said surface points of the sample, performing a distance varying step (33) comprising varying the tip-to-sample distance D, and performing a time dependencies recording step (35), comprising recording time dependencies TC(t), xrel(t), yrel(t), D(t). Based on these time dependencies, four maps can be created from a single measurement: constant current map, constant height map, Local Density of States Topography map and potential barrier map.

Detection of spin nucleus resonance (NMR) precession signal/peak of at least one atom or molecule of a sample material placed on a sample electrode while a static uniform magnetic field of a determined strength is induced through it is achieved by applying an alternating bias voltage to a tunneling tip in a frequency at least greater than an NMR frequency range and smaller than a hyperfine electron spin resonance (ESR) frequency range for alternatingly changing within each cycle of the alternating bias voltage at least one atom or molecule of a sample material between diamagnetic and paramagnetic states, and analysing a measured electrical tunneling current passing through the sample electrode. A plurality of hyperfine ESR signals/peaks are identified in the measured electrical tunneling current, each of which associated with a respective cycle of the alternating bias voltage, and a respective hyperfine ESR frequency thereof is determined.

Detection of spin nucleus resonance (NMR) precession signal/peak of at least one atom or molecule of a sample material placed on a sample electrode while a static uniform magnetic field of a determined strength is induced through it is achieved by applying an alternating bias voltage to a tunneling tip in a frequency at least greater than an NMR frequency range and smaller than a hyperfine electron spin resonance (ESR) frequency range for alternatingly changing within each cycle of the alternating bias voltage at least one atom or molecule of a sample material between diamagnetic and paramagnetic states, and analysing a measured electrical tunneling current passing through the sample electrode. A plurality of hyperfine ESR signals/peaks are identified in the measured electrical tunneling current, each of which associated with a respective cycle of the alternating bias voltage, and a respective hyperfine ESR frequency thereof is determined.

A mode-locked laser injects pulses of minority carriers into a semiconductor sample. A microwave frequency comb is then generated by the currents formed in the movement of majority carriers native to the semiconductor and the injected minority carriers. These carriers move to cause dielectric relaxation in the sample, which can be used to determine carrier density within the sample. Measurements require close proximity of transmitter and receiver contacts with the sample and may profile a semi-conductor with a resolution of approximately 0.2 nm.

Methods, devices, and systems for controlling a scanning tunneling microscope system are provided. In some embodiments, the methods, devices, and systems of the present disclosure utilize a control system included in or added to a scanning tunneling microscope (STM) to receive data characterizing a tunneling current between a tip of the scanning tunneling microscope system and a sample, to estimate, in real-time, a work function associated with the scanning tunneling microscope system, and to adjust, by a control system, a position of the tip based on an estimated work function. Associated systems are described herein.

Methods, devices, and systems for controlling a scanning tunneling microscope system are provided. In some embodiments, the methods, devices, and systems of the present disclosure utilize a control system included in or added to a scanning tunneling microscope (STM) to receive data characterizing a tunneling current between a tip of the scanning tunneling microscope system and a sample, to estimate, in real-time, a work function associated with the scanning tunneling microscope system, and to adjust, by a control system, a position of the tip based on an estimated work function. Associated systems are described herein.

A semiconductor carrier profiling method utilizes a scanning tunneling microscope and shielded probe with an attached spectrum analyzer to measure power loss of a microwave frequency comb generated in a tunneling junction. From this power loss and by utilizing an equivalent circuit or other model, spreading resistance may be determined and carrier density from the spreading resistance. The methodology is non-destructive of the sample and allows scanning across the surface of the sample. By not being destructive, additional analysis methods, like deconvolution, are available for use.

A semiconductor carrier profiling method utilizes a scanning tunneling microscope and shielded probe with an attached spectrum analyzer to measure power loss of a microwave frequency comb generated in a tunneling junction. From this power loss and by utilizing an equivalent circuit or other model, spreading resistance may be determined and carrier density from the spreading resistance. The methodology is non-destructive of the sample and allows scanning across the surface of the sample. By not being destructive, additional analysis methods, like deconvolution, are available for use.

A method for testing an integrated circuit (IC) using a nanoprobe, by using a scanning electron microscope (SEM) to register the nanoprobe to an identified feature on the IC; navigating the nanoprobe to a region of interest; scanning the nanoprobe over the surface of the IC while reading data from the nanoprobe; when the data from the nanoprobe indicates that the nanoprobe traverse a feature of interest, decelerating the scanning speed of the nanoprobe and performing testing of the IC. The scanning can be done at a prescribed nanoprobe tip force, and during the step of decelerating the scanning speed, the method further includes increasing the nanoprobe tip force.