A method for testing an integrated circuit (IC) using a nanoprobe, by using a scanning electron microscope (SEM) to register the nanoprobe to an identified feature on the IC; navigating the nanoprobe to a region of interest; scanning the nanoprobe over the surface of the IC while reading data from the nanoprobe; when the data from the nanoprobe indicates that the nanoprobe traverse a feature of interest, decelerating the scanning speed of the nanoprobe and performing testing of the IC. The scanning can be done at a prescribed nanoprobe tip force, and during the step of decelerating the scanning speed, the method further includes increasing the nanoprobe tip force.

A control methodology for scanning tunneling microscopy is disclosed. Instead of utilizing Integral-based control systems, the methodology utilizes a dual-control algorithm to direct relative advancement of a STM tip towards a sample. A piezo actuator and stepper motor advances an STM tip towards a sample at a given distance until measuring a current greater than or equal to a desired setpoint current. Readings of the contemporaneous step are analyzed to direct the system to change continue or change direction and also determine the size of each step. In simulations where Proportion and/or Integral control methodology was added to the algorithm the stability of the feedback control is decreased. The present methodology accounts for temperature variances in the environment and also appears to clean and protect the tip electrode, prolonging its useful life.

A control methodology for scanning tunneling microscopy is disclosed. Instead of utilizing Integral-based control systems, the methodology utilizes a dual-control algorithm to direct relative advancement of a STM tip towards a sample. A piezo actuator and stepper motor advances an STM tip towards a sample at a given distance until measuring a current greater than or equal to a desired setpoint current. Readings of the contemporaneous step are analyzed to direct the system to change continue or change direction and also determine the size of each step. In simulations where Proportion and/or Integral control methodology was added to the algorithm the stability of the feedback control is decreased. The present methodology accounts for temperature variances in the environment and also appears to clean and protect the tip electrode, prolonging its useful life.

There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.

There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.

A mode-locked laser injects pulses of minority carriers into a semiconductor sample. A microwave frequency comb is then generated by the currents formed in the movement of majority carriers native to the semiconductor and the injected minority carriers. These carriers move to cause dielectric relaxation in the sample, which can be used to determine carrier density within the sample. Measurements require close proximity of transmitter and receiver contacts with the sample and may profile a semi-conductor with a resolution of approximately 0.2 nm.

An optical output system includes: a first laser that outputs first light which is a pulse laser in response to input of a first signal; a second laser that outputs second light which is a pulse laser in response to input of a second signal; and an arithmetic unit that inputs the first signal and the second signal to the first laser and the second laser, wherein the arithmetic unit repeatedly inputs the first signal and the second signal with switching a variable delay value, which is a difference between a timing to input the first signal to the first laser and a timing to input the second signal to the second laser, in a plurality of ways.

An optical output system includes: a first laser that outputs first light which is a pulse laser in response to input of a first signal; a second laser that outputs second light which is a pulse laser in response to input of a second signal; and an arithmetic unit that inputs the first signal and the second signal to the first laser and the second laser, wherein the arithmetic unit repeatedly inputs the first signal and the second signal with switching a variable delay value, which is a difference between a timing to input the first signal to the first laser and a timing to input the second signal to the second laser, in a plurality of ways.

There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.

A method for testing an integrated circuit (IC) using a nanoprobe, by using a scanning electron microscope (SEM) to register the nanoprobe to an identified feature on the IC; navigating the nanoprobe to a region of interest; scanning the nanoprobe over the surface of the IC while reading data from the nanoprobe; when the data from the nanoprobe indicates that the nanoprobe traverse a feature of interest, decelerating the scanning speed of the nanoprobe and performing testing of the IC. The scanning can be done at a prescribed nanoprobe tip force, and during the step of decelerating the scanning speed, the method further includes increasing the nanoprobe tip force.