Patent classifications
G01Q60/24
Sample holder for an atomic force microscope
The present invention relates to sample holders for holding a sample, particularly for an atomic force microscope. Such a sample holder comprising a sample dish (1) comprising a bottom (2), and an opening (3) arranged in said bottom (2) for receiving and holding the sample (15). Furthermore the present invention relates to a sample holder system and to a method for transferring an e.g. biological sample (15) from a biopsy tool (18) to a sample holder.
Self-sensing array of microcantilevers for chemical detection
The invention provides a chemical detection system for detecting at least one target chemical species, including a self-sensed cantilevered probe array having a plurality of self-sensed cantilevered probes, at least one chemical-sensitive coating material applied to at least one cantilevered probe in the cantilevered probe array, and an interface circuit that is coupled to the cantilevered probe array. At least one cantilevered probe in the cantilevered probe array exhibits a shifted cantilevered probe response when the cantilevered probe array is exposed to the target chemical species and the interface circuit actuates the cantilevered probe. A handheld chemical detection system and a method of operation are also disclosed.
METHOD AND APPARATUS FOR AVOIDING DAMAGE WHEN ANALYSING A SAMPLE SURFACE WITH A SCANNING PROBE MICROSCOPE
The present application relates to a method for avoiding damage when analyzing a sample surface with a scanning probe microscope, the method comprising the step of: detecting an electrostatic interaction between a charging of the sample surface and a measuring tip of the scanning probe microscope in the course of the approach of the measuring tip to the sample surface already at a distance from the sample surface which is greater than the distance of the measuring tip when analyzing the sample surface.
METHOD AND APPARATUS FOR AVOIDING DAMAGE WHEN ANALYSING A SAMPLE SURFACE WITH A SCANNING PROBE MICROSCOPE
The present application relates to a method for avoiding damage when analyzing a sample surface with a scanning probe microscope, the method comprising the step of: detecting an electrostatic interaction between a charging of the sample surface and a measuring tip of the scanning probe microscope in the course of the approach of the measuring tip to the sample surface already at a distance from the sample surface which is greater than the distance of the measuring tip when analyzing the sample surface.
MEASUREMENT METHOD, MANUFACTURING METHOD OF DEVICE, AND MEASUREMENT SYSTEM
According to one embodiment, there is provided a measurement method. The method includes measuring an amount of overlay shift between a first layer and a second layer using a first overlay mark and a second overlay mark. The first layer is provided as a layer including the first overlay mark above a first substrate. The second layer is provided as a layer including the second overlay mark above the first overlay mark. The method includes acquiring a parameter related to asymmetry of a shape of the second overlay mark. The method includes obtaining an amount of correction with respect to a measured value of the amount of overlay shift based on the acquired parameter and the measured amount of overlay shift.
SITU TRIBOMETER AND METHODS OF USE
Techniques for determining a characteristic of a sample using an atomic force microscope including a cantilever having a probe attached thereto, including positioning the sample within a cell and sliding the probe over a sliding zone of the sample within the cell. Lateral and vertical deformations of the cantilever are detected using the atomic force microscope as the probe is slid over the sliding zone. One or more characteristics are determined based on the detected lateral deformations of the cantilever.
Thin film metrology
A method of evaluating a thickness of a film on a substrate includes detecting atomic force responses of the film to exposure of electromagnetic radiation in the infrared portion of the electromagnetic spectrum. The use of atomic force microscopy to evaluate thicknesses of thin films avoids underlayer noise commonly encountered when optical metrology techniques are utilized to evaluate film thicknesses. Such underlayer noise adversely impacts the accuracy of the thickness evaluation.
Thin film metrology
A method of evaluating a thickness of a film on a substrate includes detecting atomic force responses of the film to exposure of electromagnetic radiation in the infrared portion of the electromagnetic spectrum. The use of atomic force microscopy to evaluate thicknesses of thin films avoids underlayer noise commonly encountered when optical metrology techniques are utilized to evaluate film thicknesses. Such underlayer noise adversely impacts the accuracy of the thickness evaluation.
TRUNCATED NON-LINEAR INTERFEROMETER-BASED SENSOR SYSTEM
A truncated non-linear interferometer-based sensor system includes an input that receives an optical beam and a non-linear amplifier that generates a probe beam and a conjugate beam from the optical beam. The system's local oscillators are related to the probe beam and the conjugate beam. The system includes a sensor that transduces an input with the probe beam and the conjugate beam. The transduction detects changes in the phase of each of the probe beam and the conjugate beam. The system's phase sensitive detectors detect phase modulations between the respective local oscillators, the probe beam, and the conjugate beam and outputs phase signals based on detected phase modulations. The system measures phase signals indicative of the sensor's input resulting from a sum or difference of the phase signals. The measurement exhibits a quantum noise reduction in an intensity difference, a phase sum, or an amplitude difference quadrature.
TRUNCATED NON-LINEAR INTERFEROMETER-BASED SENSOR SYSTEM
A truncated non-linear interferometer-based sensor system includes an input that receives an optical beam and a non-linear amplifier that generates a probe beam and a conjugate beam from the optical beam. The system's local oscillators are related to the probe beam and the conjugate beam. The system includes a sensor that transduces an input with the probe beam and the conjugate beam. The transduction detects changes in the phase of each of the probe beam and the conjugate beam. The system's phase sensitive detectors detect phase modulations between the respective local oscillators, the probe beam, and the conjugate beam and outputs phase signals based on detected phase modulations. The system measures phase signals indicative of the sensor's input resulting from a sum or difference of the phase signals. The measurement exhibits a quantum noise reduction in an intensity difference, a phase sum, or an amplitude difference quadrature.